NL7313162A - - Google Patents
Info
- Publication number
- NL7313162A NL7313162A NL7313162A NL7313162A NL7313162A NL 7313162 A NL7313162 A NL 7313162A NL 7313162 A NL7313162 A NL 7313162A NL 7313162 A NL7313162 A NL 7313162A NL 7313162 A NL7313162 A NL 7313162A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP47096157A JPS4953776A (xx) | 1972-09-27 | 1972-09-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7313162A true NL7313162A (xx) | 1974-03-29 |
Family
ID=14157510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7313162A NL7313162A (xx) | 1972-09-27 | 1973-09-25 |
Country Status (8)
Country | Link |
---|---|
US (1) | US3972756A (xx) |
JP (1) | JPS4953776A (xx) |
CA (1) | CA986234A (xx) |
DE (1) | DE2348199A1 (xx) |
FR (1) | FR2200629B1 (xx) |
GB (1) | GB1440643A (xx) |
IT (1) | IT993439B (xx) |
NL (1) | NL7313162A (xx) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5228881A (en) * | 1975-08-29 | 1977-03-04 | Toko Inc | Silicon gated, field effect semiconductor device |
GB1545208A (en) * | 1975-09-27 | 1979-05-02 | Plessey Co Ltd | Electrical solid state devices |
JPS5917529B2 (ja) * | 1977-11-29 | 1984-04-21 | 富士通株式会社 | 半導体装置の製造方法 |
DE2754066A1 (de) * | 1977-12-05 | 1979-06-13 | Siemens Ag | Herstellung einer integrierten schaltung mit abgestuften schichten aus isolations- und elektrodenmaterial |
US4149307A (en) * | 1977-12-28 | 1979-04-17 | Hughes Aircraft Company | Process for fabricating insulated-gate field-effect transistors with self-aligned contacts |
JPS5492175A (en) * | 1977-12-29 | 1979-07-21 | Fujitsu Ltd | Manufacture of semiconductor device |
US4251571A (en) * | 1978-05-02 | 1981-02-17 | International Business Machines Corporation | Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon |
USRE32351E (en) * | 1978-06-19 | 1987-02-17 | Rca Corporation | Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer |
US4668973A (en) * | 1978-06-19 | 1987-05-26 | Rca Corporation | Semiconductor device passivated with phosphosilicate glass over silicon nitride |
JPS5534444A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of semiconductor device |
US4343078A (en) * | 1979-03-05 | 1982-08-10 | Nippon Electric Co., Ltd. | IGFET Forming method |
US4355454A (en) * | 1979-09-05 | 1982-10-26 | Texas Instruments Incorporated | Coating device with As2 -O3 -SiO2 |
US4287661A (en) * | 1980-03-26 | 1981-09-08 | International Business Machines Corporation | Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation |
US5879994A (en) * | 1997-04-15 | 1999-03-09 | National Semiconductor Corporation | Self-aligned method of fabricating terrace gate DMOS transistor |
US10138681B2 (en) | 2016-08-16 | 2018-11-27 | John Crawford | Ladder tie off system |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3474310A (en) * | 1967-02-03 | 1969-10-21 | Hitachi Ltd | Semiconductor device having a sulfurtreated silicon compound thereon and a method of making the same |
US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
US3646665A (en) * | 1970-05-22 | 1972-03-07 | Gen Electric | Complementary mis-fet devices and method of fabrication |
US3700508A (en) * | 1970-06-25 | 1972-10-24 | Gen Instrument Corp | Fabrication of integrated microcircuit devices |
JPS4917073A (xx) * | 1972-06-09 | 1974-02-15 | ||
JPS5148948B2 (xx) * | 1972-09-07 | 1976-12-23 |
-
1972
- 1972-09-27 JP JP47096157A patent/JPS4953776A/ja active Pending
-
1973
- 1973-09-24 GB GB4471673A patent/GB1440643A/en not_active Expired
- 1973-09-25 NL NL7313162A patent/NL7313162A/xx unknown
- 1973-09-25 DE DE19732348199 patent/DE2348199A1/de active Pending
- 1973-09-25 CA CA181,838A patent/CA986234A/en not_active Expired
- 1973-09-26 FR FR7334473A patent/FR2200629B1/fr not_active Expired
- 1973-09-26 US US05/400,924 patent/US3972756A/en not_active Expired - Lifetime
- 1973-09-26 IT IT29420/73A patent/IT993439B/it active
Also Published As
Publication number | Publication date |
---|---|
FR2200629B1 (xx) | 1977-09-09 |
FR2200629A1 (xx) | 1974-04-19 |
IT993439B (it) | 1975-09-30 |
US3972756A (en) | 1976-08-03 |
DE2348199A1 (de) | 1974-05-02 |
JPS4953776A (xx) | 1974-05-24 |
CA986234A (en) | 1976-03-23 |
GB1440643A (en) | 1976-06-23 |