NL7313120A - - Google Patents

Info

Publication number
NL7313120A
NL7313120A NL7313120A NL7313120A NL7313120A NL 7313120 A NL7313120 A NL 7313120A NL 7313120 A NL7313120 A NL 7313120A NL 7313120 A NL7313120 A NL 7313120A NL 7313120 A NL7313120 A NL 7313120A
Authority
NL
Netherlands
Application number
NL7313120A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7313120A publication Critical patent/NL7313120A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
NL7313120A 1972-09-25 1973-09-24 NL7313120A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4429572A GB1437328A (en) 1972-09-25 1972-09-25 Sensors having recycling means

Publications (1)

Publication Number Publication Date
NL7313120A true NL7313120A (enExample) 1974-03-27

Family

ID=10432634

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7313120A NL7313120A (enExample) 1972-09-25 1973-09-24

Country Status (6)

Country Link
US (1) US3856989A (enExample)
JP (1) JPS4988417A (enExample)
CA (1) CA984056A (enExample)
FR (1) FR2200631B1 (enExample)
GB (1) GB1437328A (enExample)
NL (1) NL7313120A (enExample)

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US4047187A (en) * 1974-04-01 1977-09-06 Canon Kabushiki Kaisha System for exposure measurement and/or focus detection by means of image senser
FR2288373A1 (fr) * 1974-10-18 1976-05-14 Thomson Csf Dispositif image a transfert de charges
US4009380A (en) * 1975-01-20 1977-02-22 The United States Of America As Represented By The Secretary Of The Navy Electro-optical system for performing matrix-vector multiplication
US3963942A (en) * 1975-03-06 1976-06-15 Bell Telephone Laboratories, Incorporated Semiconductor charge transfer devices with dark current background cancellation
NL180157C (nl) * 1975-06-09 1987-01-02 Philips Nv Halfgeleider beeldopneeminrichting.
JPS5217771A (en) * 1975-07-31 1977-02-09 Sony Corp Charge transfer device
JPS5233416A (en) * 1975-09-09 1977-03-14 Matsushita Electric Ind Co Ltd Image pickup device
US4010319A (en) * 1975-11-20 1977-03-01 Rca Corporation Smear reduction in ccd imagers
US4011441A (en) * 1975-12-22 1977-03-08 General Electric Company Solid state imaging apparatus
US4011442A (en) * 1975-12-22 1977-03-08 General Electric Company Apparatus for sensing optical signals
US4045816A (en) * 1976-02-12 1977-08-30 Recognition Equipment Incorporated Automatic corrector for fixed pattern odd/even video noise
JPS5941351B2 (ja) * 1976-09-13 1984-10-06 株式会社日立製作所 カラ−用固体撮像素子
US4301471A (en) * 1976-12-20 1981-11-17 Hughes Aircraft Company Moving target indicator system utilizing charge coupled device
JPS53125791A (en) * 1977-04-08 1978-11-02 Toshiba Corp Solidstate pick up unit
JPS583630B2 (ja) * 1977-09-16 1983-01-22 松下電子工業株式会社 固体光像検出装置
JPS54114922A (en) * 1978-02-27 1979-09-07 Nec Corp Two dimentional pick up element and its drive
JPS5515275A (en) * 1978-07-19 1980-02-02 Semiconductor Res Found Charge transfer device
US4263623A (en) * 1979-04-02 1981-04-21 Eastman Kodak Company Slow-frame video camera/recorder and image-sensing and signal processing device for use therewith
US4219845A (en) * 1979-04-12 1980-08-26 The United States Of America As Represented By The Secretary Of The Air Force Sense and inject moving target indicator apparatus
JPS568968A (en) * 1979-07-05 1981-01-29 Matsushita Electric Ind Co Ltd Solid-state image pickup unit
US4278999A (en) * 1979-09-12 1981-07-14 The Mead Corporation Moving image scanner
DE2939490A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter zweidimensionaler bildsensor mit einer differenzbildenden stufe
US4368467A (en) * 1980-02-29 1983-01-11 Fujitsu Limited Display device
US4307423A (en) * 1980-04-17 1981-12-22 The United States Of America As Represented By The Secretary Of The Navy Temperature stabilization circuit for charge coupled photodiode array
JPS5750178A (en) * 1980-09-10 1982-03-24 Canon Inc Photoelectric converter
GB2090100B (en) * 1980-12-22 1985-09-11 Burroughs Corp Electro-optical imaging system
US4488163A (en) * 1981-01-19 1984-12-11 Westinghouse Electric Corp. Highly isolated photodetectors
US4481539A (en) * 1981-03-10 1984-11-06 Rca Corporation Error correction arrangement for imagers
WO1982003146A1 (en) * 1981-03-10 1982-09-16 Corp Rca Error correction arrangement for imagers
US4553167A (en) * 1981-08-08 1985-11-12 Canon Kabushiki Kaisha Image signal processing device
US4433343A (en) * 1981-12-22 1984-02-21 Levine Michael A Extrinsic infrared detector with dopant site charge-neutralization
JPS58134581A (ja) * 1982-02-04 1983-08-10 Victor Co Of Japan Ltd 固体撮像装置
FR2520910B1 (fr) * 1982-02-04 1987-07-10 Victor Company Of Japan Dispositif a memoire video
JPS5916472A (ja) * 1982-07-19 1984-01-27 Sharp Corp 固体撮像装置
JPS5934772A (ja) * 1982-08-20 1984-02-25 Olympus Optical Co Ltd 画像信号処理装置
EP0120980B1 (de) * 1983-03-30 1987-06-24 Ibm Deutschland Gmbh Schaltungsanordnung für die Kompensation von Übersprechen bei elektrooptischen Abtastvorrichtungen
JPH0666914B2 (ja) * 1984-01-10 1994-08-24 シャープ株式会社 固体撮像装置
JPH0834564B2 (ja) * 1984-05-23 1996-03-29 株式会社日立製作所 固体撮像装置およびその駆動方法
US4866497A (en) * 1984-06-01 1989-09-12 General Electric Company Infra-red charge-coupled device image sensor
NL8403113A (nl) * 1984-10-12 1986-05-01 Philips Nv Ladingsgekoppelde inrichting.
US4656520A (en) * 1985-07-16 1987-04-07 Rca Corporation Frame-transfer CCD imager with recirculating frame storage register
US4736261A (en) * 1985-08-12 1988-04-05 Eastman Kodak Company Full frame recirculating imaging device having a field sequential output
US4703442A (en) * 1985-09-25 1987-10-27 Rca Corporation Temperature tracking defect corrector for a solid-state imager
US4739495A (en) * 1985-09-25 1988-04-19 Rca Corporation Solid-state imager defect corrector
US4779137A (en) * 1986-04-23 1988-10-18 Canon Kabushiki Kaisha Image pickup apparatus
EP0272152B1 (en) * 1986-12-18 1994-08-03 Canon Kabushiki Kaisha Signal reading out circuit
JPH0748826B2 (ja) * 1988-12-01 1995-05-24 三菱電機株式会社 固体撮像装置
JPH02219270A (ja) * 1989-02-20 1990-08-31 Nec Corp 固体撮像装置
US5825840A (en) * 1996-04-23 1998-10-20 Eastman Kodak Company Interline sensor employing photocapacitor gate
US6459077B1 (en) * 1998-09-15 2002-10-01 Dalsa, Inc. Bucket brigade TDI photodiode sensor
US6740879B1 (en) * 2002-05-07 2004-05-25 Raytheon Company Method and apparatus for automated detection and indication of movement
US7851798B2 (en) * 2005-05-04 2010-12-14 Micron Technology, Inc. Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel
KR101471157B1 (ko) * 2008-06-02 2014-12-10 삼성디스플레이 주식회사 발광블럭 구동방법, 이를 수행하기 위한 백라이트 어셈블리및 이를 갖는 표시장치
JP5760406B2 (ja) * 2010-11-29 2015-08-12 セイコーエプソン株式会社 検出回路、センサーデバイス及び電子機器
CN105424095B (zh) * 2016-01-04 2017-07-28 东南大学 二维阻性传感器阵列的快速读出电路及其读出方法
CN105606133B (zh) * 2016-01-28 2017-10-31 东南大学 阻性传感器阵列测试电路及其测试方法、传感系统
CN105628061B (zh) * 2016-01-28 2017-10-31 东南大学 阻性传感器阵列快速读出电路及其读出方法、传感系统
CN106500736B (zh) * 2016-09-26 2019-02-05 东南大学 一种二维阻性传感阵列的线性读出电路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3555180A (en) * 1967-02-17 1971-01-12 Servo Corp Of America Semiconductor detector and scanning device
SE336682B (enExample) * 1969-10-29 1971-07-12 Bofors Ab

Also Published As

Publication number Publication date
US3856989A (en) 1974-12-24
DE2348242B2 (de) 1975-08-14
FR2200631B1 (enExample) 1978-02-10
DE2348242A1 (de) 1974-03-28
JPS4988417A (enExample) 1974-08-23
GB1437328A (en) 1976-05-26
FR2200631A1 (enExample) 1974-04-19
CA984056A (en) 1976-02-17

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Legal Events

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BV The patent application has lapsed