NL7310279A - - Google Patents

Info

Publication number
NL7310279A
NL7310279A NL7310279A NL7310279A NL7310279A NL 7310279 A NL7310279 A NL 7310279A NL 7310279 A NL7310279 A NL 7310279A NL 7310279 A NL7310279 A NL 7310279A NL 7310279 A NL7310279 A NL 7310279A
Authority
NL
Netherlands
Application number
NL7310279A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7310279A publication Critical patent/NL7310279A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
NL7310279A 1972-07-31 1973-07-24 NL7310279A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27680872A 1972-07-31 1972-07-31

Publications (1)

Publication Number Publication Date
NL7310279A true NL7310279A (zh) 1974-02-04

Family

ID=23058148

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7310279A NL7310279A (zh) 1972-07-31 1973-07-24

Country Status (4)

Country Link
US (1) US4065742A (zh)
JP (1) JPS4953784A (zh)
DE (1) DE2338612A1 (zh)
NL (1) NL7310279A (zh)

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JPS551103A (en) * 1978-06-06 1980-01-07 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor resistor
US4368479A (en) * 1979-02-09 1983-01-11 The United States Of America As Represented By The Secretary Of The Navy Silicon barrier Josephson junction configuration
FR2451634A1 (fr) * 1979-03-16 1980-10-10 Thomson Csf Resistance de charge pour hyperfrequence, procede de fabrication et circuit d'utilisation d'une telle resistance
US4294510A (en) * 1979-12-10 1981-10-13 International Business Machines Corporation Semiconductor fiber optical detection
US4393391A (en) * 1980-06-16 1983-07-12 Supertex, Inc. Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area
US4403241A (en) * 1980-08-22 1983-09-06 Bell Telephone Laboratories, Incorporated Method for etching III-V semiconductors and devices made by this method
US4506283A (en) * 1981-05-08 1985-03-19 Rockwell International Corporation Small area high value resistor with greatly reduced parasitic capacitance
JPS58154256A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 半導体装置
US4419714A (en) * 1982-04-02 1983-12-06 International Business Machines Corporation Low inductance ceramic capacitor and method for its making
US4663648A (en) * 1984-12-19 1987-05-05 Texas Instruments Incorporated Three dimensional structures of active and passive semiconductor components
US4737470A (en) * 1984-12-19 1988-04-12 Texas Instruments Incorporated Method of making three dimensional structures of active and passive semiconductor components
US5272105A (en) * 1988-02-11 1993-12-21 Gte Laboratories Incorporated Method of manufacturing an heteroepitaxial semiconductor structure
US5079616A (en) * 1988-02-11 1992-01-07 Gte Laboratories Incorporated Semiconductor structure
US5214497A (en) * 1988-05-25 1993-05-25 Hitachi, Ltd. Polycrystalline silicon resistor for use in a semiconductor integrated circuit having a memory device
US4990988A (en) * 1989-06-09 1991-02-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Laterally stacked Schottky diodes for infrared sensor applications
US5370458A (en) * 1990-10-09 1994-12-06 Lockheed Sanders, Inc. Monolithic microwave power sensor
US5756366A (en) * 1995-12-21 1998-05-26 Honeywell Inc. Magnetic hardening of bit edges of magnetoresistive RAM
JP3938964B2 (ja) * 1997-02-10 2007-06-27 三菱電機株式会社 高耐圧半導体装置およびその製造方法
US6068782A (en) * 1998-02-11 2000-05-30 Ormet Corporation Individual embedded capacitors for laminated printed circuit boards
JP3804375B2 (ja) 1999-12-09 2006-08-02 株式会社日立製作所 半導体装置とそれを用いたパワースイッチング駆動システム
DE10053957C2 (de) * 2000-10-31 2002-10-31 Infineon Technologies Ag Temperaturkompensierter Halbleiterwiderstand und dessen Verwendung
US6485989B1 (en) 2001-08-30 2002-11-26 Micron Technology, Inc. MRAM sense layer isolation
US6621404B1 (en) * 2001-10-23 2003-09-16 Lsi Logic Corporation Low temperature coefficient resistor
US6720231B2 (en) 2002-01-28 2004-04-13 International Business Machines Corporation Fin-type resistors
US7649141B2 (en) * 2003-06-30 2010-01-19 Advent Solar, Inc. Emitter wrap-through back contact solar cells on thin silicon wafers
US7335555B2 (en) * 2004-02-05 2008-02-26 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells
DE102004048607A1 (de) * 2004-10-06 2006-04-13 Robert Bosch Gmbh Halbleiterbauelement
JP4826882B2 (ja) * 2005-05-18 2011-11-30 株式会社 アイアイエスマテリアル スクラップシリコンの選別及び分析方法
US7989250B2 (en) * 2007-04-06 2011-08-02 Rosemount Aerospace Inc. Membrane grating for beam steering device and method of fabricating same
JP2008294080A (ja) * 2007-05-22 2008-12-04 Sanyo Electric Co Ltd 太陽電池セル及び太陽電池セルの製造方法
US8889216B2 (en) * 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
TW200949930A (en) * 2008-02-07 2009-12-01 Ibm Method of manufacturing a thin silicon slice
CN106098791A (zh) * 2016-06-16 2016-11-09 杭州赛晶电子有限公司 U型蚀刻直角台面硅二极管及其硅芯和制备方法
CN108400176B (zh) * 2018-02-28 2020-01-17 张治国 垂直多结硅光伏器件的电极引线及集成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA567939A (en) * 1955-05-27 1958-12-23 R. Roup Rolland Electrical circuit elements
US3015762A (en) * 1959-03-23 1962-01-02 Shockley William Semiconductor devices
US3171068A (en) * 1960-10-19 1965-02-23 Merck & Co Inc Semiconductor diodes
US3860948A (en) * 1964-02-13 1975-01-14 Hitachi Ltd Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby
CH439499A (fr) * 1965-04-07 1967-07-15 Centre Electron Horloger Résistance semiconductrice et procédé pour sa fabrication
US3617825A (en) * 1968-12-23 1971-11-02 George E Chilton Multijunction photodiode detector
US3579057A (en) * 1969-08-18 1971-05-18 Rca Corp Method of making a semiconductor article and the article produced thereby
US3697831A (en) * 1970-12-28 1972-10-10 Us Navy Series electrical, parallel thermal gunn devices
US3711753A (en) * 1971-06-04 1973-01-16 Signetics Corp Enhancement mode n-channel mos structure and method

Also Published As

Publication number Publication date
DE2338612A1 (de) 1974-02-21
JPS4953784A (zh) 1974-05-24
US4065742A (en) 1977-12-27

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BV The patent application has lapsed