NL7304634A - - Google Patents

Info

Publication number
NL7304634A
NL7304634A NL7304634A NL7304634A NL7304634A NL 7304634 A NL7304634 A NL 7304634A NL 7304634 A NL7304634 A NL 7304634A NL 7304634 A NL7304634 A NL 7304634A NL 7304634 A NL7304634 A NL 7304634A
Authority
NL
Netherlands
Application number
NL7304634A
Other versions
NL165886C (nl
NL165886B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3265572A external-priority patent/JPS48101889A/ja
Priority claimed from JP47074865A external-priority patent/JPS5850032B2/ja
Priority claimed from JP664573A external-priority patent/JPS4996681A/ja
Priority claimed from JP952173A external-priority patent/JPS5637706B2/ja
Priority claimed from JP1296673A external-priority patent/JPS49103578A/ja
Priority claimed from JP1296773A external-priority patent/JPS538475B2/ja
Priority claimed from JP2611373A external-priority patent/JPS49115678A/ja
Application filed filed Critical
Publication of NL7304634A publication Critical patent/NL7304634A/xx
Priority to NL7901180A priority Critical patent/NL7901180A/xx
Publication of NL165886B publication Critical patent/NL165886B/xx
Publication of NL165886C publication Critical patent/NL165886C/xx
Application granted granted Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/466—Three-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/464—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/08—Infrared
NL7304634.A 1972-04-03 1973-04-03 Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers. NL165886C (nl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NL7901180A NL7901180A (en) 1972-04-03 1979-02-14 Charge transfer semiconductor device - has depletion regions of different depth beneath adjacent electrodes

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP3265572A JPS48101889A (en:Method) 1972-04-03 1972-04-03
JP47074865A JPS5850032B2 (ja) 1972-07-26 1972-07-26 ハンドウタイソウチ
JP664573A JPS4996681A (en:Method) 1973-01-16 1973-01-16
JP952173A JPS5637706B2 (en:Method) 1973-01-24 1973-01-24
JP1296673A JPS49103578A (en:Method) 1973-02-02 1973-02-02
JP1296773A JPS538475B2 (en:Method) 1973-02-02 1973-02-02
JP2611373A JPS49115678A (en:Method) 1973-03-07 1973-03-07

Publications (3)

Publication Number Publication Date
NL7304634A true NL7304634A (en:Method) 1973-10-05
NL165886B NL165886B (nl) 1980-12-15
NL165886C NL165886C (nl) 1981-05-15

Family

ID=27563367

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7304634.A NL165886C (nl) 1972-04-03 1973-04-03 Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers.

Country Status (3)

Country Link
US (1) US4032952A (en:Method)
DE (1) DE2316612A1 (en:Method)
NL (1) NL165886C (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2296270A1 (fr) * 1974-12-27 1976-07-23 Thomson Csf Dispositif a transfert de charges en couche mince

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931674A (en) * 1974-02-08 1976-01-13 Fairchild Camera And Instrument Corporation Self aligned CCD element including two levels of electrodes and method of manufacture therefor
NL184591C (nl) * 1974-09-24 1989-09-01 Philips Nv Ladingsoverdrachtinrichting.
NL7413207A (nl) * 1974-10-08 1976-04-12 Philips Nv Halfgeleiderinrichting.
GB1548877A (en) * 1975-06-26 1979-07-18 Mullard Ltd Semiconductor devices
NL7610351A (nl) * 1976-09-17 1978-03-21 Philips Nv Ladingsoverdrachtinrichting.
DE2713876C2 (de) * 1977-03-29 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Ladungsgekoppeltes Element (CCD)
US4365261A (en) * 1977-08-26 1982-12-21 Texas Instruments Incorporated Co-planar barrier-type charge coupled device with enhanced storage capacity and decreased leakage current
DE2743245A1 (de) * 1977-09-26 1979-04-05 Siemens Ag Ladungsgekoppeltes bauelement
US4151539A (en) * 1977-12-23 1979-04-24 The United States Of America As Represented By The Secretary Of The Air Force Junction-storage JFET bucket-brigade structure
US4266234A (en) * 1978-01-16 1981-05-05 Texas Instruments Incorporated Parallel readout stratified channel CCD
US4271419A (en) * 1978-01-16 1981-06-02 Texas Instruments Incorporated Serial readout stratified channel CCD
US4277792A (en) * 1978-02-17 1981-07-07 Texas Instruments Incorporated Piggyback readout stratified channel CCD
JPS5515275A (en) * 1978-07-19 1980-02-02 Semiconductor Res Found Charge transfer device
DE2837485A1 (de) * 1978-08-28 1980-04-17 Siemens Ag Verfahren zur herstellung einer ladungsgekoppelten anordnung fuer sensoren und speicher
JPS5939904B2 (ja) * 1978-09-28 1984-09-27 株式会社東芝 半導体装置
US4228365A (en) * 1978-10-03 1980-10-14 The United States Of America As Represented By The Secretary Of The Army Monolithic infrared focal plane charge coupled device imager
US4273596A (en) * 1978-10-03 1981-06-16 The United States Of America As Represented By The Secretary Of The Army Method of preparing a monolithic intrinsic infrared focal plane charge coupled device imager
US4285000A (en) * 1979-03-12 1981-08-18 Rockwell International Corporation Buried channel charge coupled device with semi-insulating substrate
US4389615A (en) * 1979-08-29 1983-06-21 Rockwell International Corporation CCD Demodulator circuit
EP0025658A3 (en) * 1979-09-18 1983-04-20 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Improvements in or relating to charge storage and transfer devices and their fabrication
JPS5780764A (en) * 1980-11-10 1982-05-20 Sony Corp Solid state image pickup element
US4531055A (en) * 1983-01-05 1985-07-23 The United States Of America As Represented By The Secretary Of The Air Force Self-guarding Schottky barrier infrared detector array
JPH0666344B2 (ja) * 1984-02-08 1994-08-24 三洋電機株式会社 電荷結合素子
US4779124A (en) * 1984-06-08 1988-10-18 Texas Instruments Incorporated Virtual phase buried channel CCD
US4683484A (en) * 1985-08-23 1987-07-28 Bell Communications Research, Inc. Lateral confinement of charge carriers in a multiple quantum well structure
US4668971A (en) * 1985-08-27 1987-05-26 Texas Instruments Incorporated CCD imager with JFET peripherals
US4992841A (en) * 1987-06-25 1991-02-12 The United States Of America As Represented By The Secretary Of The Air Force Pseudo uniphase charge coupled device
US5191398A (en) * 1987-09-02 1993-03-02 Nec Corporation Charge transfer device producing a noise-free output
US5055900A (en) * 1989-10-11 1991-10-08 The Trustees Of Columbia University In The City Of New York Trench-defined charge-coupled device
US5070380A (en) * 1990-08-13 1991-12-03 Eastman Kodak Company Transfer gate for photodiode to CCD image sensor
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
US5502318A (en) * 1994-02-14 1996-03-26 Texas Instruments Incorporated Bipolar gate charge coupled device with clocked virtual phase
JP2009135242A (ja) * 2007-11-30 2009-06-18 Sanyo Electric Co Ltd 撮像装置
US20140216513A1 (en) * 2011-09-23 2014-08-07 United Technologies Corporation High zt thermoelectric with reversible junction

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3651349A (en) * 1970-02-16 1972-03-21 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3792322A (en) * 1973-04-19 1974-02-12 W Boyle Buried channel charge coupled devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2296270A1 (fr) * 1974-12-27 1976-07-23 Thomson Csf Dispositif a transfert de charges en couche mince

Also Published As

Publication number Publication date
US4032952A (en) 1977-06-28
NL165886C (nl) 1981-05-15
DE2316612A1 (de) 1973-10-18
NL165886B (nl) 1980-12-15

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee