NL7301309A - - Google Patents
Info
- Publication number
- NL7301309A NL7301309A NL7301309A NL7301309A NL7301309A NL 7301309 A NL7301309 A NL 7301309A NL 7301309 A NL7301309 A NL 7301309A NL 7301309 A NL7301309 A NL 7301309A NL 7301309 A NL7301309 A NL 7301309A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47011194A JPS5132511B2 (es) | 1972-01-31 | 1972-01-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL7301309A true NL7301309A (es) | 1973-08-02 |
| NL158324B NL158324B (nl) | 1978-10-16 |
Family
ID=11771233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7301309A NL158324B (nl) | 1972-01-31 | 1973-01-30 | Halfgeleiderinrichting met een tegen overspanningen te beschermen veldeffecttransistor met geisoleerde stuurelektrode. |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5132511B2 (es) |
| CA (1) | CA999654A (es) |
| CH (1) | CH552285A (es) |
| FR (1) | FR2170022B1 (es) |
| GB (1) | GB1419542A (es) |
| IT (1) | IT977703B (es) |
| NL (1) | NL158324B (es) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51111042A (en) * | 1975-03-26 | 1976-10-01 | Hitachi Ltd | Gate circuit |
| JPS5226881U (es) * | 1975-08-14 | 1977-02-24 | ||
| JPS53121579A (en) * | 1977-03-31 | 1978-10-24 | Toshiba Corp | Semiconductor integrated circuit |
| US4751473A (en) * | 1985-11-05 | 1988-06-14 | Mitsubishi Denki Kabushiki Kaisha | FET amplifier circuit |
| US4737733A (en) * | 1986-10-29 | 1988-04-12 | Rca Corporation | Overdrive control of FET power amplifier |
| JPH0693613B2 (ja) * | 1987-01-16 | 1994-11-16 | 三菱電機株式会社 | Ｍｉｓトランジスタ回路 |
| JPS63208324A (ja) * | 1987-02-24 | 1988-08-29 | Mitsubishi Electric Corp | 半導体集積回路装置 |
| US8804290B2 (en) * | 2012-01-17 | 2014-08-12 | Texas Instruments Incorporated | Electrostatic discharge protection circuit having buffer stage FET with thicker gate oxide than common-source FET |
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1972
- 1972-01-31 JP JP47011194A patent/JPS5132511B2/ja not_active Expired
-
1973
- 1973-01-30 FR FR7303224A patent/FR2170022B1/fr not_active Expired
- 1973-01-30 NL NL7301309A patent/NL158324B/xx not_active IP Right Cessation
- 1973-01-30 CA CA162,396A patent/CA999654A/en not_active Expired
- 1973-01-30 CH CH128073A patent/CH552285A/xx not_active IP Right Cessation
- 1973-01-30 IT IT6718173A patent/IT977703B/it active
- 1973-01-31 GB GB475473A patent/GB1419542A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA999654A (en) | 1976-11-09 |
| FR2170022B1 (es) | 1976-04-30 |
| NL158324B (nl) | 1978-10-16 |
| DE2304710A1 (de) | 1973-08-09 |
| JPS4881485A (es) | 1973-10-31 |
| IT977703B (it) | 1974-09-20 |
| DE2304710B2 (de) | 1975-07-03 |
| FR2170022A1 (es) | 1973-09-14 |
| CH552285A (de) | 1974-07-31 |
| JPS5132511B2 (es) | 1976-09-13 |
| GB1419542A (en) | 1975-12-31 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NL80 | Abbreviated name of patent owner mentioned of already nullified patent |
Owner name: MITSUB DENKI |
|
| V4 | Lapsed because of reaching the maxim lifetime of a patent |