NL7210512A - - Google Patents

Info

Publication number
NL7210512A
NL7210512A NL7210512A NL7210512A NL7210512A NL 7210512 A NL7210512 A NL 7210512A NL 7210512 A NL7210512 A NL 7210512A NL 7210512 A NL7210512 A NL 7210512A NL 7210512 A NL7210512 A NL 7210512A
Authority
NL
Netherlands
Application number
NL7210512A
Other versions
NL161622B (nl
NL161622C (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7210512A publication Critical patent/NL7210512A/xx
Publication of NL161622B publication Critical patent/NL161622B/xx
Application granted granted Critical
Publication of NL161622C publication Critical patent/NL161622C/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3264—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits in audio amplifiers
    • H03F1/327—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits in audio amplifiers to emulate discharge tube amplifier characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
NL7210512.A 1971-07-31 1972-07-31 Veldeffecttransistor omvattende een halfgeleider- lichaam met een kanaalgebied met nagenoeg intrinsieke geleiding. NL161622C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46057768A JPS5217720B1 (de) 1971-07-31 1971-07-31

Publications (3)

Publication Number Publication Date
NL7210512A true NL7210512A (de) 1973-02-02
NL161622B NL161622B (nl) 1979-09-17
NL161622C NL161622C (nl) 1980-02-15

Family

ID=13065042

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7210512.A NL161622C (nl) 1971-07-31 1972-07-31 Veldeffecttransistor omvattende een halfgeleider- lichaam met een kanaalgebied met nagenoeg intrinsieke geleiding.

Country Status (5)

Country Link
US (1) US3828230A (de)
JP (1) JPS5217720B1 (de)
DE (1) DE2237662A1 (de)
GB (1) GB1396198A (de)
NL (1) NL161622C (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526076B1 (de) * 1971-04-28 1977-02-18
JPS5854524B2 (ja) * 1974-11-15 1983-12-05 ソニー株式会社 デンリヨクゾウフクカイロ
US4106044A (en) * 1974-03-16 1978-08-08 Nippon Gakki Seizo Kabushiki Kaisha Field effect transistor having unsaturated characteristics
NL163898C (nl) * 1974-03-16 1980-10-15 Nippon Musical Instruments Mfg Werkwijze voor het vervaardigen van een veldeffect- transistor met onverzadigde stroom-spanningskarakteri- stieken.
JPS51251A (de) * 1974-06-19 1976-01-05 Tokyo Shibaura Electric Co
JPS5818333Y2 (ja) * 1974-06-19 1983-04-14 株式会社東芝 ゾウフクカイロ
US4107725A (en) * 1974-08-02 1978-08-15 Nippon Gakki Seizo Kabushiki Kaisha Compound field effect transistor
US4100438A (en) * 1974-08-21 1978-07-11 Nippon Gakki Seizo Kabushiki Kaisha Compound transistor circuitry
GB1508228A (en) * 1974-11-12 1978-04-19 Sony Corp Transistor circuits
JPS5226177A (en) * 1975-08-25 1977-02-26 Toshiba Corp Semi-conductor unit
JPS608628B2 (ja) * 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置
NL191525C (nl) * 1977-02-02 1995-08-21 Shinkokai Zaidan Hojin Handot Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype.
DE2858820C2 (de) * 1977-02-02 1996-09-19 Zaidan Hojin Handotai Kenkyu I·2·L-Schaltungsstruktur
US4284997A (en) * 1977-07-07 1981-08-18 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction transistor and its applied devices
DE2804165C2 (de) * 1978-02-01 1982-11-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einem für die Stromführung geeigneten Kanal und Verfahren zum Betrieb dieser Halbleiteranordnung
JPS54140483A (en) * 1978-04-21 1979-10-31 Nec Corp Semiconductor device
US5019876A (en) * 1978-07-14 1991-05-28 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor photo-electric converter
US4375124A (en) * 1981-11-12 1983-03-01 Gte Laboratories Incorporated Power static induction transistor fabrication
US4406052A (en) * 1981-11-12 1983-09-27 Gte Laboratories Incorporated Non-epitaxial static induction transistor processing
US4458259A (en) * 1981-11-12 1984-07-03 Gte Laboratories Incorporated Etched-source static induction transistor
US4684965A (en) * 1983-05-09 1987-08-04 Raytheon Company Monolithic programmable attenuator
US4641174A (en) * 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
US4566172A (en) * 1984-02-24 1986-01-28 Gte Laboratories Incorporated Method of fabricating a static induction type recessed junction field effect transistor
US4543706A (en) * 1984-02-24 1985-10-01 Gte Laboratories Incorporated Fabrication of junction field effect transistor with filled grooves
US4551909A (en) * 1984-03-29 1985-11-12 Gte Laboratories Incorporated Method of fabricating junction field effect transistors
US4661726A (en) * 1985-10-31 1987-04-28 Honeywell Inc. Utilizing a depletion mode FET operating in the triode region and a depletion mode FET operating in the saturation region
US5434536A (en) * 1987-03-23 1995-07-18 Pritchard; Eric K. Semiconductor emulation of vacuum tubes
JPH07297409A (ja) * 1994-03-02 1995-11-10 Toyota Motor Corp 電界効果型半導体装置
US5498997A (en) * 1994-12-23 1996-03-12 Schiebold; Cristopher F. Transformerless audio amplifier
US5955776A (en) * 1996-12-04 1999-09-21 Ball Semiconductor, Inc. Spherical shaped semiconductor integrated circuit
WO2011025973A1 (en) * 2009-08-28 2011-03-03 Microsemi Corporation Silicon carbide dual-mesa static induction transistor
US8519410B1 (en) 2010-12-20 2013-08-27 Microsemi Corporation Silicon carbide vertical-sidewall dual-mesa static induction transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB856430A (en) * 1956-12-13 1960-12-14 Mullard Ltd Improvements in and relating to semi-conductive devices
GB1053442A (de) * 1964-05-18
US3366802A (en) * 1965-04-06 1968-01-30 Fairchild Camera Instr Co Field effect transistor photosensitive modulator
US3667010A (en) * 1967-07-06 1972-05-30 Nasa Gunn-type solid-state devices
DE2001584C3 (de) * 1970-01-15 1975-02-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Sperrschicht-Feldeffekttransistor

Also Published As

Publication number Publication date
JPS5217720B1 (de) 1977-05-17
NL161622B (nl) 1979-09-17
US3828230A (en) 1974-08-06
DE2237662A1 (de) 1973-02-15
NL161622C (nl) 1980-02-15
GB1396198A (en) 1975-06-04

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Legal Events

Date Code Title Description
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: ZAIDAN HOJIN

V4 Discontinued because of reaching the maximum lifetime of a patent