NL7207950A - - Google Patents

Info

Publication number
NL7207950A
NL7207950A NL7207950A NL7207950A NL7207950A NL 7207950 A NL7207950 A NL 7207950A NL 7207950 A NL7207950 A NL 7207950A NL 7207950 A NL7207950 A NL 7207950A NL 7207950 A NL7207950 A NL 7207950A
Authority
NL
Netherlands
Application number
NL7207950A
Other versions
NL175569B (nl
NL175569C (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7207950A publication Critical patent/NL7207950A/xx
Publication of NL175569B publication Critical patent/NL175569B/xx
Application granted granted Critical
Publication of NL175569C publication Critical patent/NL175569C/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/3432DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors
    • H03F3/3435DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers
    • H03F3/3437DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers with complementary transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63Combinations of vertical and lateral BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
NLAANVRAGE7207950,A 1971-06-29 1972-06-12 Samengestelde transistorketen. NL175569C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46047778A JPS5135113B1 (https=) 1971-06-29 1971-06-29

Publications (3)

Publication Number Publication Date
NL7207950A true NL7207950A (https=) 1973-01-03
NL175569B NL175569B (nl) 1984-06-18
NL175569C NL175569C (nl) 1984-11-16

Family

ID=12784815

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7207950,A NL175569C (nl) 1971-06-29 1972-06-12 Samengestelde transistorketen.

Country Status (7)

Country Link
US (1) US3725754A (https=)
JP (1) JPS5135113B1 (https=)
DE (1) DE2231932C3 (https=)
FR (1) FR2144366A5 (https=)
GB (1) GB1399530A (https=)
IT (1) IT959993B (https=)
NL (1) NL175569C (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995307A (en) * 1973-12-28 1976-11-30 International Business Machines Corporation Integrated monolithic switch for high voltage applications
GB1490631A (en) * 1975-01-10 1977-11-02 Plessey Co Ltd Transistor arrangement having low charge storage
JPS5767303A (en) * 1980-10-15 1982-04-23 Fanuc Ltd Transistor amplifying circuit
RU2234796C1 (ru) * 2003-07-02 2004-08-20 Южно-Российский государственный университет экономики и сервиса Дифференциальный усилитель
US20050190513A1 (en) * 2004-03-01 2005-09-01 Omron Corporation Surge suppression circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1158566B (de) * 1962-07-18 1963-12-05 Telefunken Patent Schaltungsanordnung zur Erzielung einer kurzen Abschaltzeit eines durch einen Emitterfolgeverstaerker angesteuerten Leistungsschalttransistors
US3311751A (en) * 1962-07-23 1967-03-28 United Aircraft Corp Control circuit for voltage controlled oscillator
US3192401A (en) * 1962-09-05 1965-06-29 Gen Precision Inc Transistor pulse generating circuit of alternately opposite polarities
US3197710A (en) * 1963-05-31 1965-07-27 Westinghouse Electric Corp Complementary transistor structure
US3437945A (en) * 1965-11-10 1969-04-08 Fairchild Camera Instr Co Transformerless transistor output amplifier
AT296384B (de) * 1968-09-27 1972-02-10 Goerz Electro Gmbh Halbleiterschaltung mit Kippverhalten
GB1199540A (en) * 1969-04-24 1970-07-22 Pye Ltd Circuit Arrangements Employing Complementary Pairs of Transistors.
DE1932531A1 (de) * 1969-06-26 1971-01-07 Siemens Ag Transistorverbundschaltung mit drei Transistoren

Also Published As

Publication number Publication date
DE2231932B2 (de) 1978-12-14
FR2144366A5 (https=) 1973-02-09
DE2231932C3 (de) 1982-09-23
DE2231932A1 (de) 1973-02-08
JPS5135113B1 (https=) 1976-09-30
NL175569B (nl) 1984-06-18
US3725754A (en) 1973-04-03
NL175569C (nl) 1984-11-16
IT959993B (it) 1973-11-10
GB1399530A (en) 1975-07-02

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Legal Events

Date Code Title Description
BC A request for examination has been filed
TNT Modifications of names of proprietors of patents or applicants of examined patent applications

Owner name: NEC CORPORATION

V4 Discontinued because of reaching the maximum lifetime of a patent