NL175569B - Samengestelde transistorketen. - Google Patents

Samengestelde transistorketen.

Info

Publication number
NL175569B
NL175569B NLAANVRAGE7207950,A NL7207950A NL175569B NL 175569 B NL175569 B NL 175569B NL 7207950 A NL7207950 A NL 7207950A NL 175569 B NL175569 B NL 175569B
Authority
NL
Netherlands
Prior art keywords
composite transistor
transistor chain
chain
composite
transistor
Prior art date
Application number
NLAANVRAGE7207950,A
Other languages
English (en)
Other versions
NL7207950A (nl
NL175569C (nl
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Publication of NL7207950A publication Critical patent/NL7207950A/xx
Publication of NL175569B publication Critical patent/NL175569B/nl
Application granted granted Critical
Publication of NL175569C publication Critical patent/NL175569C/nl

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/3432DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors
    • H03F3/3435DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers
    • H03F3/3437DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers with complementary transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821Combination of lateral and vertical transistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
NLAANVRAGE7207950,A 1971-06-29 1972-06-12 Samengestelde transistorketen. NL175569C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46047778A JPS5135113B1 (nl) 1971-06-29 1971-06-29

Publications (3)

Publication Number Publication Date
NL7207950A NL7207950A (nl) 1973-01-03
NL175569B true NL175569B (nl) 1984-06-18
NL175569C NL175569C (nl) 1984-11-16

Family

ID=12784815

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7207950,A NL175569C (nl) 1971-06-29 1972-06-12 Samengestelde transistorketen.

Country Status (7)

Country Link
US (1) US3725754A (nl)
JP (1) JPS5135113B1 (nl)
DE (1) DE2231932C3 (nl)
FR (1) FR2144366A5 (nl)
GB (1) GB1399530A (nl)
IT (1) IT959993B (nl)
NL (1) NL175569C (nl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995307A (en) * 1973-12-28 1976-11-30 International Business Machines Corporation Integrated monolithic switch for high voltage applications
GB1490631A (en) * 1975-01-10 1977-11-02 Plessey Co Ltd Transistor arrangement having low charge storage
JPS5767303A (en) * 1980-10-15 1982-04-23 Fanuc Ltd Transistor amplifying circuit
US20050190513A1 (en) * 2004-03-01 2005-09-01 Omron Corporation Surge suppression circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1158566B (de) * 1962-07-18 1963-12-05 Telefunken Patent Schaltungsanordnung zur Erzielung einer kurzen Abschaltzeit eines durch einen Emitterfolgeverstaerker angesteuerten Leistungsschalttransistors
US3311751A (en) * 1962-07-23 1967-03-28 United Aircraft Corp Control circuit for voltage controlled oscillator
US3192401A (en) * 1962-09-05 1965-06-29 Gen Precision Inc Transistor pulse generating circuit of alternately opposite polarities
US3197710A (en) * 1963-05-31 1965-07-27 Westinghouse Electric Corp Complementary transistor structure
US3437945A (en) * 1965-11-10 1969-04-08 Fairchild Camera Instr Co Transformerless transistor output amplifier
AT296384B (de) * 1968-09-27 1972-02-10 Goerz Electro Gmbh Halbleiterschaltung mit Kippverhalten
GB1199540A (en) * 1969-04-24 1970-07-22 Pye Ltd Circuit Arrangements Employing Complementary Pairs of Transistors.
DE1932531A1 (de) * 1969-06-26 1971-01-07 Siemens Ag Transistorverbundschaltung mit drei Transistoren

Also Published As

Publication number Publication date
US3725754A (en) 1973-04-03
DE2231932B2 (de) 1978-12-14
NL7207950A (nl) 1973-01-03
NL175569C (nl) 1984-11-16
IT959993B (it) 1973-11-10
JPS5135113B1 (nl) 1976-09-30
GB1399530A (en) 1975-07-02
DE2231932A1 (de) 1973-02-08
DE2231932C3 (de) 1982-09-23
FR2144366A5 (nl) 1973-02-09

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Legal Events

Date Code Title Description
BC A request for examination has been filed
TNT Modifications of names of proprietors of patents or applicants of examined patent applications

Owner name: NEC CORPORATION

V4 Discontinued because of reaching the maximum lifetime of a patent