JPS5135113B1 - - Google Patents

Info

Publication number
JPS5135113B1
JPS5135113B1 JP46047778A JP4777871A JPS5135113B1 JP S5135113 B1 JPS5135113 B1 JP S5135113B1 JP 46047778 A JP46047778 A JP 46047778A JP 4777871 A JP4777871 A JP 4777871A JP S5135113 B1 JPS5135113 B1 JP S5135113B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46047778A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP46047778A priority Critical patent/JPS5135113B1/ja
Priority to NLAANVRAGE7207950,A priority patent/NL175569C/xx
Priority to US00263272A priority patent/US3725754A/en
Priority to IT26358/72A priority patent/IT959993B/it
Priority to GB3028072A priority patent/GB1399530A/en
Priority to FR7223403A priority patent/FR2144366A5/fr
Priority to DE2231932A priority patent/DE2231932C3/de
Publication of JPS5135113B1 publication Critical patent/JPS5135113B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—Dc amplifiers in which all stages are dc-coupled
    • H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
    • H03F3/3432—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with bipolar transistors
    • H03F3/3435—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers
    • H03F3/3437—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers with complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
JP46047778A 1971-06-29 1971-06-29 Pending JPS5135113B1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP46047778A JPS5135113B1 (ja) 1971-06-29 1971-06-29
NLAANVRAGE7207950,A NL175569C (nl) 1971-06-29 1972-06-12 Samengestelde transistorketen.
US00263272A US3725754A (en) 1971-06-29 1972-06-15 Transistor circuit of compound connection
IT26358/72A IT959993B (it) 1971-06-29 1972-06-28 Circuito a transistor per la connessione composta
GB3028072A GB1399530A (en) 1971-06-29 1972-06-28 Compound transistors
FR7223403A FR2144366A5 (ja) 1971-06-29 1972-06-28
DE2231932A DE2231932C3 (de) 1971-06-29 1972-06-29 Transistorverbundschaltungsanordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46047778A JPS5135113B1 (ja) 1971-06-29 1971-06-29

Publications (1)

Publication Number Publication Date
JPS5135113B1 true JPS5135113B1 (ja) 1976-09-30

Family

ID=12784815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46047778A Pending JPS5135113B1 (ja) 1971-06-29 1971-06-29

Country Status (7)

Country Link
US (1) US3725754A (ja)
JP (1) JPS5135113B1 (ja)
DE (1) DE2231932C3 (ja)
FR (1) FR2144366A5 (ja)
GB (1) GB1399530A (ja)
IT (1) IT959993B (ja)
NL (1) NL175569C (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995307A (en) * 1973-12-28 1976-11-30 International Business Machines Corporation Integrated monolithic switch for high voltage applications
GB1490631A (en) * 1975-01-10 1977-11-02 Plessey Co Ltd Transistor arrangement having low charge storage
JPS5767303A (en) * 1980-10-15 1982-04-23 Fanuc Ltd Transistor amplifying circuit
US20050190513A1 (en) * 2004-03-01 2005-09-01 Omron Corporation Surge suppression circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1158566B (de) * 1962-07-18 1963-12-05 Telefunken Patent Schaltungsanordnung zur Erzielung einer kurzen Abschaltzeit eines durch einen Emitterfolgeverstaerker angesteuerten Leistungsschalttransistors
US3311751A (en) * 1962-07-23 1967-03-28 United Aircraft Corp Control circuit for voltage controlled oscillator
US3192401A (en) * 1962-09-05 1965-06-29 Gen Precision Inc Transistor pulse generating circuit of alternately opposite polarities
US3197710A (en) * 1963-05-31 1965-07-27 Westinghouse Electric Corp Complementary transistor structure
US3437945A (en) * 1965-11-10 1969-04-08 Fairchild Camera Instr Co Transformerless transistor output amplifier
AT296384B (de) * 1968-09-27 1972-02-10 Goerz Electro Gmbh Halbleiterschaltung mit Kippverhalten
GB1199540A (en) * 1969-04-24 1970-07-22 Pye Ltd Circuit Arrangements Employing Complementary Pairs of Transistors.
DE1932531A1 (de) * 1969-06-26 1971-01-07 Siemens Ag Transistorverbundschaltung mit drei Transistoren

Also Published As

Publication number Publication date
FR2144366A5 (ja) 1973-02-09
DE2231932A1 (de) 1973-02-08
NL175569C (nl) 1984-11-16
IT959993B (it) 1973-11-10
US3725754A (en) 1973-04-03
DE2231932B2 (de) 1978-12-14
DE2231932C3 (de) 1982-09-23
NL175569B (nl) 1984-06-18
NL7207950A (ja) 1973-01-03
GB1399530A (en) 1975-07-02

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