Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
  • H10W10/01—Manufacture or treatment
  • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
  • H10D62/137—Collector regions of BJTs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/641—Combinations of only vertical BJTs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/676—Combinations of only thyristors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
  • H10W10/30—Isolation regions comprising PN junctions

Priority Applications (10)

Applications Claiming Priority (1)

Publications (1)

Family

ID=19816170

Family Applications (1)

Country Status (9)

Families Citing this family (5)

• 1972
  • 1972-05-31 NL NL7207325A patent/NL7207325A/xx not_active Application Discontinuation
• 1973
  • 1973-05-25 GB GB2515273A patent/GB1427261A/en not_active Expired
  • 1973-05-25 CA CA172,293A patent/CA970474A/en not_active Expired
  • 1973-05-25 DE DE2326672A patent/DE2326672A1/de not_active Ceased
  • 1973-05-25 IT IT24644/73A patent/IT987932B/it active
  • 1973-05-28 AU AU56174/73A patent/AU475239B2/en not_active Expired
  • 1973-05-28 JP JP48058760A patent/JPS5112994B2/ja not_active Expired
  • 1973-05-28 SE SE7307492A patent/SE384948B/xx unknown
  • 1973-05-30 FR FR7319648A patent/FR2186740B1/fr not_active Expired

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