NL7200985A - - Google Patents

Info

Publication number
NL7200985A
NL7200985A NL7200985A NL7200985A NL7200985A NL 7200985 A NL7200985 A NL 7200985A NL 7200985 A NL7200985 A NL 7200985A NL 7200985 A NL7200985 A NL 7200985A NL 7200985 A NL7200985 A NL 7200985A
Authority
NL
Netherlands
Application number
NL7200985A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7200985A publication Critical patent/NL7200985A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2637Circuits therefor for testing other individual devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2644Adaptations of individual semiconductor devices to facilitate the testing thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/162Testing steps

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Bipolar Transistors (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
NL7200985A 1971-01-26 1972-01-25 NL7200985A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10978371A 1971-01-26 1971-01-26

Publications (1)

Publication Number Publication Date
NL7200985A true NL7200985A (https=) 1972-07-28

Family

ID=22329546

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7200985A NL7200985A (https=) 1971-01-26 1972-01-25

Country Status (11)

Country Link
US (1) US3676229A (https=)
JP (1) JPS5145476B1 (https=)
AU (1) AU463388B2 (https=)
BE (1) BE778430A (https=)
CA (1) CA927523A (https=)
DE (1) DE2201833C3 (https=)
FR (1) FR2123285B1 (https=)
GB (1) GB1344395A (https=)
NL (1) NL7200985A (https=)
SE (1) SE381776B (https=)
YU (1) YU41806B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3895977A (en) * 1973-12-20 1975-07-22 Harris Corp Method of fabricating a bipolar transistor
US4079505A (en) * 1974-03-14 1978-03-21 Fujitsu Limited Method for manufacturing a transistor
FR2280203A1 (fr) * 1974-07-26 1976-02-20 Thomson Csf Procede d'ajustement de tension de seuil de transistors a effet de champ
US3999217A (en) * 1975-02-26 1976-12-21 Rca Corporation Semiconductor device having parallel path for current flow
DE2656420A1 (de) * 1976-12-13 1978-06-15 Siemens Ag Transistor mit innerer gegenkopplung
DE2949590A1 (de) * 1979-12-10 1981-06-11 Robert Bosch do Brasil, Campinas Verfahren zur vormessung von hochstromparametern bei leistungstransistoren und hierzu geeigneter leistungstransistor
DE3138340C2 (de) * 1981-09-26 1987-01-29 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum Herstellen von mehreren planaren Bauelementen
US5217907A (en) * 1992-01-28 1993-06-08 National Semiconductor Corporation Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction
US5451529A (en) * 1994-07-05 1995-09-19 Taiwan Semiconductor Manufacturing Company Method of making a real time ion implantation metal silicide monitor
US9093335B2 (en) * 2012-11-29 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Calculating carrier concentrations in semiconductor Fins using probed resistance
DE102014211352B4 (de) * 2014-06-13 2021-08-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schichtsystem und Verfahren zur Bestimmung des spezifischen Widerstandes

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335340A (en) * 1964-02-24 1967-08-08 Ibm Combined transistor and testing structures and fabrication thereof

Also Published As

Publication number Publication date
SE381776B (sv) 1975-12-15
US3676229A (en) 1972-07-11
JPS5145476B1 (https=) 1976-12-03
YU41806B (en) 1988-02-29
DE2201833A1 (de) 1972-08-24
AU3793872A (en) 1973-07-19
CA927523A (en) 1973-05-29
YU11572A (en) 1984-02-29
FR2123285A1 (https=) 1972-09-08
GB1344395A (en) 1974-01-23
FR2123285B1 (https=) 1977-04-22
BE778430A (fr) 1972-05-16
AU463388B2 (en) 1975-07-24
DE2201833B2 (de) 1977-11-10
DE2201833C3 (de) 1978-06-29

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Legal Events

Date Code Title Description
BB A search report has been drawn up
BC A request for examination has been filed
BV The patent application has lapsed