NL7200511A - - Google Patents

Info

Publication number
NL7200511A
NL7200511A NL7200511A NL7200511A NL7200511A NL 7200511 A NL7200511 A NL 7200511A NL 7200511 A NL7200511 A NL 7200511A NL 7200511 A NL7200511 A NL 7200511A NL 7200511 A NL7200511 A NL 7200511A
Authority
NL
Netherlands
Application number
NL7200511A
Other versions
NL181767B (nl
NL181767C (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7200511A publication Critical patent/NL7200511A/xx
Publication of NL181767B publication Critical patent/NL181767B/xx
Application granted granted Critical
Publication of NL181767C publication Critical patent/NL181767C/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472Surface-channel CCD
    • H10D44/474Two-phase CCD
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213Channel regions of field-effect devices
    • H10D62/335Channel regions of field-effect devices of charge-coupled devices
    • H10P30/222
    • H10P95/00
NLAANVRAGE7200511,A 1971-01-14 1972-01-13 Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en het overdragen van pakketten minderheidsladingsdragers en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. NL181767C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7101182A FR2123592A5 (enExample) 1971-01-14 1971-01-14

Publications (3)

Publication Number Publication Date
NL7200511A true NL7200511A (enExample) 1972-07-18
NL181767B NL181767B (nl) 1987-05-18
NL181767C NL181767C (nl) 1987-10-16

Family

ID=9070296

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7200511,A NL181767C (nl) 1971-01-14 1972-01-13 Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en het overdragen van pakketten minderheidsladingsdragers en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.

Country Status (5)

Country Link
US (1) US3829884A (enExample)
JP (1) JPS5637705B1 (enExample)
FR (1) FR2123592A5 (enExample)
GB (1) GB1322110A (enExample)
NL (1) NL181767C (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906542A (en) * 1972-06-14 1975-09-16 Bell Telephone Labor Inc Conductively connected charge coupled devices
US3999208A (en) * 1972-10-18 1976-12-21 Hitachi, Ltd. Charge transfer semiconductor device
IE39611B1 (en) * 1973-08-14 1978-11-22 Siemens Ag Improvements in or relating to two-phase charge coupled devices
DE2342923C2 (de) * 1973-08-24 1975-10-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Zweiphasen-Ladungsverschlebeanordnung und nach diesem Verfahren hergestellte Zweiphasen-Ladungs Verschiebeanordnung
US4348690A (en) * 1981-04-30 1982-09-07 Rca Corporation Semiconductor imagers
US4396438A (en) * 1981-08-31 1983-08-02 Rca Corporation Method of making CCD imagers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374406A (en) * 1964-06-01 1968-03-19 Rca Corp Insulated-gate field-effect transistor
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
US3564355A (en) * 1968-02-08 1971-02-16 Sprague Electric Co Semiconductor device employing a p-n junction between induced p- and n- regions
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3651349A (en) * 1970-02-16 1972-03-21 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3654499A (en) * 1970-06-24 1972-04-04 Bell Telephone Labor Inc Charge coupled memory with storage sites
US3676715A (en) * 1970-06-26 1972-07-11 Bell Telephone Labor Inc Semiconductor apparatus for image sensing and dynamic storage
JPS5541920B2 (enExample) * 1971-09-11 1980-10-27

Also Published As

Publication number Publication date
GB1322110A (en) 1973-07-04
DE2201395A1 (de) 1972-07-27
DE2201395B2 (de) 1976-07-22
NL181767B (nl) 1987-05-18
JPS5637705B1 (enExample) 1981-09-02
FR2123592A5 (enExample) 1972-09-15
US3829884A (en) 1974-08-13
NL181767C (nl) 1987-10-16

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Legal Events

Date Code Title Description
BB A search report has been drawn up
BC A request for examination has been filed
BV The patent application has lapsed
A85 Still pending on 85-01-01
V4 Discontinued because of reaching the maximum lifetime of a patent