NL7114679A - - Google Patents
Info
- Publication number
- NL7114679A NL7114679A NL7114679A NL7114679A NL7114679A NL 7114679 A NL7114679 A NL 7114679A NL 7114679 A NL7114679 A NL 7114679A NL 7114679 A NL7114679 A NL 7114679A NL 7114679 A NL7114679 A NL 7114679A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H10P32/141—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
-
- H10P32/171—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9773070A | 1970-12-14 | 1970-12-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7114679A true NL7114679A (en:Method) | 1972-06-16 |
Family
ID=22264838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7114679A NL7114679A (en:Method) | 1970-12-14 | 1971-10-26 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3656031A (en:Method) |
| JP (1) | JPS503625B1 (en:Method) |
| CA (1) | CA927522A (en:Method) |
| DE (1) | DE2162020A1 (en:Method) |
| FR (1) | FR2118065B1 (en:Method) |
| GB (1) | GB1343666A (en:Method) |
| NL (1) | NL7114679A (en:Method) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3906539A (en) * | 1971-09-22 | 1975-09-16 | Philips Corp | Capacitance diode having a large capacitance ratio |
| GB1471617A (en) * | 1973-06-21 | 1977-04-27 | Sony Corp | Circuits comprising a semiconductor device |
| US4079402A (en) * | 1973-07-09 | 1978-03-14 | National Semiconductor Corporation | Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface |
| US4496963A (en) * | 1976-08-20 | 1985-01-29 | National Semiconductor Corporation | Semiconductor device with an ion implanted stabilization layer |
| JPS5412680A (en) * | 1977-06-30 | 1979-01-30 | Matsushita Electric Ind Co Ltd | Junction-type field effect transistor and its manufacture |
| JPS5846863B2 (ja) * | 1977-08-25 | 1983-10-19 | 松下電器産業株式会社 | 半導体集積回路装置 |
| DE2827330C2 (de) * | 1978-06-22 | 1982-10-21 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zur Verminderung des Breitbandrauschens |
| US4176368A (en) * | 1978-10-10 | 1979-11-27 | National Semiconductor Corporation | Junction field effect transistor for use in integrated circuits |
| US4393575A (en) * | 1979-03-09 | 1983-07-19 | National Semiconductor Corporation | Process for manufacturing a JFET with an ion implanted stabilization layer |
| NL7904200A (nl) * | 1979-05-29 | 1980-12-02 | Philips Nv | Lagenveldeffecttransistor. |
| USRE34821E (en) * | 1986-11-17 | 1995-01-03 | Linear Technology Corporation | High speed junction field effect transistor for use in bipolar integrated circuits |
| EP0268426A3 (en) * | 1986-11-17 | 1989-03-15 | Linear Technology Corporation | High speed junction field effect transistor for use in bipolar integrated circuits |
| JP4610865B2 (ja) * | 2003-05-30 | 2011-01-12 | パナソニック株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL269345A (en:Method) * | 1960-09-19 | |||
| US3335342A (en) * | 1962-06-11 | 1967-08-08 | Fairchild Camera Instr Co | Field-effect transistors |
| US3268374A (en) * | 1963-04-24 | 1966-08-23 | Texas Instruments Inc | Method of producing a field-effect transistor |
| US3316131A (en) * | 1963-08-15 | 1967-04-25 | Texas Instruments Inc | Method of producing a field-effect transistor |
| US3414782A (en) * | 1965-12-03 | 1968-12-03 | Westinghouse Electric Corp | Semiconductor structure particularly for performing unipolar transistor functions in integrated circuits |
| US3413531A (en) * | 1966-09-06 | 1968-11-26 | Ion Physics Corp | High frequency field effect transistor |
| US3472710A (en) * | 1967-04-20 | 1969-10-14 | Teledyne Inc | Method of forming a field effect transistor |
-
1970
- 1970-12-14 US US97730A patent/US3656031A/en not_active Expired - Lifetime
-
1971
- 1971-10-26 NL NL7114679A patent/NL7114679A/xx unknown
- 1971-10-29 CA CA126496A patent/CA927522A/en not_active Expired
- 1971-12-09 GB GB5718371A patent/GB1343666A/en not_active Expired
- 1971-12-10 JP JP46100618A patent/JPS503625B1/ja active Pending
- 1971-12-13 FR FR7144738A patent/FR2118065B1/fr not_active Expired
- 1971-12-14 DE DE19712162020 patent/DE2162020A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA927522A (en) | 1973-05-29 |
| FR2118065B1 (en:Method) | 1974-08-23 |
| US3656031A (en) | 1972-04-11 |
| DE2162020A1 (de) | 1972-07-13 |
| FR2118065A1 (en:Method) | 1972-07-28 |
| JPS503625B1 (en:Method) | 1975-02-07 |
| GB1343666A (en) | 1974-01-16 |