NL7113723A - - Google Patents

Info

Publication number
NL7113723A
NL7113723A NL7113723A NL7113723A NL7113723A NL 7113723 A NL7113723 A NL 7113723A NL 7113723 A NL7113723 A NL 7113723A NL 7113723 A NL7113723 A NL 7113723A NL 7113723 A NL7113723 A NL 7113723A
Authority
NL
Netherlands
Application number
NL7113723A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7113723A publication Critical patent/NL7113723A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
NL7113723A 1970-10-06 1971-10-06 NL7113723A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7846870A 1970-10-06 1970-10-06

Publications (1)

Publication Number Publication Date
NL7113723A true NL7113723A (de) 1972-04-10

Family

ID=22144214

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7113723A NL7113723A (de) 1970-10-06 1971-10-06

Country Status (3)

Country Link
US (1) US3717514A (de)
DE (2) DE7137787U (de)
NL (1) NL7113723A (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538823B2 (de) * 1971-12-22 1980-10-07
US3847687A (en) * 1972-11-15 1974-11-12 Motorola Inc Methods of forming self aligned transistor structure having polycrystalline contacts
US3904454A (en) * 1973-12-26 1975-09-09 Ibm Method for fabricating minute openings in insulating layers during the formation of integrated circuits
US3933541A (en) * 1974-01-22 1976-01-20 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor planar device
US4109273A (en) * 1974-08-16 1978-08-22 Siemens Aktiengesellschaft Contact electrode for semiconductor component
US4074304A (en) * 1974-10-04 1978-02-14 Nippon Electric Company, Ltd. Semiconductor device having a miniature junction area and process for fabricating same
US4052251A (en) * 1976-03-02 1977-10-04 Rca Corporation Method of etching sapphire utilizing sulfur hexafluoride
FR2454697A1 (fr) * 1979-04-20 1980-11-14 Thomson Csf Procede de formation d'une couche epitaxiee homopolaire sur un substrat semiconducteur
US5134090A (en) * 1982-06-18 1992-07-28 At&T Bell Laboratories Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy
EP0164976B1 (de) * 1984-06-02 1990-10-24 Fujitsu Limited Verfahren zum Herstellen eines Kontaktes für eine Halbleiteranordnung
US4898838A (en) * 1985-10-16 1990-02-06 Texas Instruments Incorporated Method for fabricating a poly emitter logic array
USH665H (en) 1987-10-19 1989-08-01 Bell Telephone Laboratories, Incorporated Resistive field shields for high voltage devices
US5017999A (en) * 1989-06-30 1991-05-21 Honeywell Inc. Method for forming variable width isolation structures
US5234861A (en) * 1989-06-30 1993-08-10 Honeywell Inc. Method for forming variable width isolation structures
TW205603B (de) * 1990-09-21 1993-05-11 Anelva Corp
EP0620586B1 (de) * 1993-04-05 2001-06-20 Denso Corporation Halbleiteranordnung mit Dünnfilm-Widerstand
US5851923A (en) * 1996-01-18 1998-12-22 Micron Technology, Inc. Integrated circuit and method for forming and integrated circuit
US6242792B1 (en) 1996-07-02 2001-06-05 Denso Corporation Semiconductor device having oblique portion as reflection
TW468271B (en) * 1999-03-26 2001-12-11 United Microelectronics Corp Thin film resistor used in a semiconductor chip and its manufacturing method
US6399465B1 (en) * 2000-02-24 2002-06-04 United Microelectronics Corp. Method for forming a triple well structure
US8012830B2 (en) * 2007-08-08 2011-09-06 Spansion Llc ORO and ORPRO with bit line trench to suppress transport program disturb

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device
US3234058A (en) * 1962-06-27 1966-02-08 Ibm Method of forming an integral masking fixture by epitaxial growth
GB1030540A (en) * 1964-01-02 1966-05-25 Gen Electric Improvements in and relating to semi-conductor diodes
US3477886A (en) * 1964-12-07 1969-11-11 Motorola Inc Controlled diffusions in semiconductive materials
DE1544273A1 (de) * 1965-12-13 1969-09-04 Siemens Ag Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall
US3490964A (en) * 1966-04-29 1970-01-20 Texas Instruments Inc Process of forming semiconductor devices by masking and diffusion
US3514845A (en) * 1968-08-16 1970-06-02 Raytheon Co Method of making integrated circuits with complementary elements

Also Published As

Publication number Publication date
DE2149766A1 (de) 1972-04-13
US3717514A (en) 1973-02-20
DE7137787U (de) 1972-01-05

Similar Documents

Publication Publication Date Title
AU1473870A (de)
AU2044470A (de)
AU2130570A (de)
AU1517670A (de)
AU1716970A (de)
AU1833270A (de)
AU2017870A (de)
AU2085370A (de)
AR195465A1 (de)
AU1872870A (de)
AU1974970A (de)
AU1343870A (de)
AU1581370A (de)
AU1591370A (de)
AU1603270A (de)
AU1689770A (de)
AU1789870A (de)
AU1832970A (de)
AU2391370A (de)
AU2144270A (de)
AU2131570A (de)
AU2130770A (de)
AU1841070A (de)
AU2119370A (de)
AU2115870A (de)