NL7109642A - - Google Patents

Info

Publication number
NL7109642A
NL7109642A NL7109642A NL7109642A NL7109642A NL 7109642 A NL7109642 A NL 7109642A NL 7109642 A NL7109642 A NL 7109642A NL 7109642 A NL7109642 A NL 7109642A NL 7109642 A NL7109642 A NL 7109642A
Authority
NL
Netherlands
Application number
NL7109642A
Other versions
NL177454C (nl
NL177454B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7109642A publication Critical patent/NL7109642A/xx
Publication of NL177454B publication Critical patent/NL177454B/xx
Application granted granted Critical
Publication of NL177454C publication Critical patent/NL177454C/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/055—Fuse
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead
NLAANVRAGE7109642,A 1970-07-13 1971-07-13 Als geintegreerde schakeling uitgevoerd uitleesgeheugen. NL177454C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5453170A 1970-07-13 1970-07-13
US9749270A 1970-12-14 1970-12-14

Publications (3)

Publication Number Publication Date
NL7109642A true NL7109642A (cg-RX-API-DMAC10.html) 1972-01-17
NL177454B NL177454B (nl) 1985-04-16
NL177454C NL177454C (nl) 1985-09-16

Family

ID=26733132

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7109642,A NL177454C (nl) 1970-07-13 1971-07-13 Als geintegreerde schakeling uitgevoerd uitleesgeheugen.

Country Status (4)

Country Link
US (1) US3733690A (cg-RX-API-DMAC10.html)
CA (1) CA944865A (cg-RX-API-DMAC10.html)
FR (1) FR2098369B1 (cg-RX-API-DMAC10.html)
NL (1) NL177454C (cg-RX-API-DMAC10.html)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4145702A (en) * 1977-07-05 1979-03-20 Burroughs Corporation Electrically programmable read-only-memory device
EP0041770A3 (en) * 1980-05-23 1984-07-11 Texas Instruments Incorporated A programmable read-only-memory element and method of fabrication thereof
US4396998A (en) * 1980-08-27 1983-08-02 Mobay Chemical Corporation Thermally reprogrammable memory array and a thermally reprogrammable memory cell therefor
US4420820A (en) * 1980-12-29 1983-12-13 Signetics Corporation Programmable read-only memory
JPS57143798A (en) * 1981-03-02 1982-09-06 Fujitsu Ltd Programmable element
US4403399A (en) * 1981-09-28 1983-09-13 Harris Corporation Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking
US4624046A (en) * 1982-01-04 1986-11-25 Fairchild Camera & Instrument Corp. Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
US4961102A (en) * 1982-01-04 1990-10-02 Shideler Jay A Junction programmable vertical transistor with high performance transistor
US4480318A (en) * 1982-02-18 1984-10-30 Fairchild Camera & Instrument Corp. Method of programming of junction-programmable read-only memories
US5008729A (en) * 1984-06-18 1991-04-16 Texas Instruments Incorporated Laser programming of semiconductor devices using diode make-link structure
US4662063A (en) * 1986-01-28 1987-05-05 The United States Of America As Represented By The Department Of The Navy Generation of ohmic contacts on indium phosphide
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
US4849365A (en) * 1988-02-16 1989-07-18 Honeywell Inc. Selective integrated circuit interconnection
US5960263A (en) * 1991-04-26 1999-09-28 Texas Instruments Incorporated Laser programming of CMOS semiconductor devices using make-link structure
US5468680A (en) * 1994-03-18 1995-11-21 Massachusetts Institute Of Technology Method of making a three-terminal fuse
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US7292066B2 (en) * 2005-04-27 2007-11-06 Stmicroelectronics, Inc. One-time programmable circuit exploiting BJT hFE degradation
KR102226206B1 (ko) * 2020-02-06 2021-03-11 포항공과대학교 산학협력단 이중 pn 접합을 포함하는 메모리 소자 및 그 구동방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US319A (en) * 1837-07-31 Improvement in machines for breaking and dressing hemp and flax
DE51C (de) * 1877-07-28 E. SCHMITZ und W. G. STANSON in New-York Verfahren zum Buchbinden
DE1524879A1 (de) * 1967-11-09 1970-11-26 Ibm Deutschland Festwertspeicher fuer Datenverarbeitungsanlagen
BE755039A (fr) * 1969-09-15 1971-02-01 Ibm Memoire semi-conductrice permanente

Also Published As

Publication number Publication date
NL177454C (nl) 1985-09-16
FR2098369B1 (cg-RX-API-DMAC10.html) 1976-09-03
US3733690A (en) 1973-05-22
NL177454B (nl) 1985-04-16
FR2098369A1 (cg-RX-API-DMAC10.html) 1972-03-10
CA944865A (en) 1974-04-02

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
V4 Discontinued because of reaching the maximum lifetime of a patent