NL7107901A - - Google Patents
Info
- Publication number
- NL7107901A NL7107901A NL7107901A NL7107901A NL7107901A NL 7107901 A NL7107901 A NL 7107901A NL 7107901 A NL7107901 A NL 7107901A NL 7107901 A NL7107901 A NL 7107901A NL 7107901 A NL7107901 A NL 7107901A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
- H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45049444A JPS4936515B1 (enExample) | 1970-06-10 | 1970-06-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL7107901A true NL7107901A (enExample) | 1971-12-14 |
| NL153723B NL153723B (nl) | 1977-06-15 |
Family
ID=12831280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL717107901A NL153723B (nl) | 1970-06-10 | 1971-06-09 | Veldeffecttransistor voorzien van een geisoleerde stuurelektrode. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3719864A (enExample) |
| JP (1) | JPS4936515B1 (enExample) |
| DE (1) | DE2128536C3 (enExample) |
| NL (1) | NL153723B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3831187A (en) * | 1973-04-11 | 1974-08-20 | Rca Corp | Thyristor having capacitively coupled control electrode |
| NL7606483A (nl) * | 1976-06-16 | 1977-12-20 | Philips Nv | Inrichting voor het mengen van signalen. |
| JPS5725287U (enExample) * | 1980-07-21 | 1982-02-09 | ||
| GB2154820B (en) * | 1984-01-23 | 1988-05-25 | Int Rectifier Corp | Photovoltaic relay |
| US4721986A (en) * | 1984-02-21 | 1988-01-26 | International Rectifier Corporation | Bidirectional output semiconductor field effect transistor and method for its maufacture |
| JP2503900B2 (ja) * | 1993-07-30 | 1996-06-05 | 日本電気株式会社 | 半導体装置及びそれを用いたモ―タドライバ回路 |
| KR970706614A (ko) * | 1995-07-19 | 1997-11-03 | 롤페스 제이 지 에이 | Hv-ldmost 형의 반도체 소자(semiconductor device of hv-ldmost type) |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE643857A (enExample) * | 1963-02-14 | |||
| US3264493A (en) * | 1963-10-01 | 1966-08-02 | Fairchild Camera Instr Co | Semiconductor circuit module for a high-gain, high-input impedance amplifier |
| US3295030A (en) * | 1963-12-18 | 1966-12-27 | Signetics Corp | Field effect transistor and method |
| US3305708A (en) * | 1964-11-25 | 1967-02-21 | Rca Corp | Insulated-gate field-effect semiconductor device |
| US3461360A (en) * | 1965-06-30 | 1969-08-12 | Ibm | Semiconductor devices with cup-shaped regions |
| FR1522584A (fr) * | 1966-03-28 | 1968-04-26 | Matsushita Electronics Corp | Transistor à effet de champ à électrodes de commande isolées |
| FR1546644A (fr) * | 1966-09-19 | 1968-11-22 | Matsushita Electronics Corp | Dispositif semi-conducteur |
| US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
| FR1540755A (fr) * | 1966-10-13 | 1968-09-27 | Rca Corp | Transistor tétrode à effet de champ |
| FR1530926A (fr) * | 1966-10-13 | 1968-06-28 | Rca Corp | Procédé pour la fabrication de dispositifs à effet de champ à électrodes de commande isolées |
| GB1173150A (en) * | 1966-12-13 | 1969-12-03 | Associated Semiconductor Mft | Improvements in Insulated Gate Field Effect Transistors |
| FR1534511A (fr) * | 1966-12-20 | 1968-07-26 | Texas Instruments Inc | Triode semiconductrice du type métal-oxyde |
| FR1563879A (enExample) * | 1968-02-09 | 1969-04-18 | ||
| GB1171874A (en) * | 1968-04-26 | 1969-11-26 | Hughes Aircraft Co | Field Effect Transistor. |
| NL6906840A (enExample) * | 1968-07-12 | 1970-01-14 |
-
1970
- 1970-06-10 JP JP45049444A patent/JPS4936515B1/ja active Pending
-
1971
- 1971-06-08 DE DE2128536A patent/DE2128536C3/de not_active Expired
- 1971-06-08 US US00151054A patent/US3719864A/en not_active Expired - Lifetime
- 1971-06-09 NL NL717107901A patent/NL153723B/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2128536B2 (de) | 1980-09-25 |
| DE2128536A1 (de) | 1971-12-16 |
| JPS4936515B1 (enExample) | 1974-10-01 |
| DE2128536C3 (de) | 1986-07-10 |
| US3719864A (en) | 1973-03-06 |
| NL153723B (nl) | 1977-06-15 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| V1 | Lapsed because of non-payment of the annual fee | ||
| NL80 | Information provided on patent owner name for an already discontinued patent |
Owner name: HITACHI |