NL7103420A - - Google Patents
Info
- Publication number
- NL7103420A NL7103420A NL7103420A NL7103420A NL7103420A NL 7103420 A NL7103420 A NL 7103420A NL 7103420 A NL7103420 A NL 7103420A NL 7103420 A NL7103420 A NL 7103420A NL 7103420 A NL7103420 A NL 7103420A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
- H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2030870A | 1970-03-17 | 1970-03-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7103420A true NL7103420A (https=) | 1971-09-21 |
Family
ID=21797887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7103420A NL7103420A (https=) | 1970-03-17 | 1971-03-15 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3604986A (https=) |
| JP (1) | JPS5128389B1 (https=) |
| BE (1) | BE764261A (https=) |
| DE (1) | DE2112114C3 (https=) |
| FR (1) | FR2083349B1 (https=) |
| GB (1) | GB1341273A (https=) |
| NL (1) | NL7103420A (https=) |
| SE (1) | SE357099B (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1355806A (en) * | 1970-12-09 | 1974-06-05 | Mullard Ltd | Methods of manufacturing a semiconductor device |
| US3753774A (en) * | 1971-04-05 | 1973-08-21 | Rca Corp | Method for making an intermetallic contact to a semiconductor device |
| US3700979A (en) * | 1971-04-07 | 1972-10-24 | Rca Corp | Schottky barrier diode and method of making the same |
| US3900344A (en) * | 1973-03-23 | 1975-08-19 | Ibm | Novel integratable schottky barrier structure and method for the fabrication thereof |
| US4408216A (en) * | 1978-06-02 | 1983-10-04 | International Rectifier Corporation | Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier for low reverse leakage over wide temperature range |
| US4243435A (en) * | 1979-06-22 | 1981-01-06 | International Business Machines Corporation | Bipolar transistor fabrication process with an ion implanted emitter |
| JPS57159055A (en) * | 1981-03-25 | 1982-10-01 | Toshiba Corp | Manufacture of semiconductor device |
| US5198372A (en) * | 1986-01-30 | 1993-03-30 | Texas Instruments Incorporated | Method for making a shallow junction bipolar transistor and transistor formed thereby |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1356197A (fr) * | 1962-06-29 | 1964-03-20 | Western Electric Co | Contact de semiconducteur |
| FR1381871A (fr) * | 1963-02-08 | 1964-12-14 | Int Standard Electric Corp | Méthode de fabrication de semi-conducteurs |
| USB421061I5 (https=) * | 1964-12-24 | |||
| FR1484390A (fr) * | 1965-06-23 | 1967-06-09 | Ion Physics Corp | Procédé de fabrication de dispositifs semi-conducteurs |
| GB1093136A (en) * | 1965-08-27 | 1967-11-29 | Johnson Matthey Co Ltd | Improvements in and relating to the bonding together of metals or alloys |
| DE1564704A1 (de) * | 1966-09-12 | 1969-12-11 | Siemens Ag | Hochfrequenztransistor |
| US3558352A (en) * | 1966-10-27 | 1971-01-26 | Ibm | Metallization process |
| US3472712A (en) * | 1966-10-27 | 1969-10-14 | Hughes Aircraft Co | Field-effect device with insulated gate |
| US3458778A (en) * | 1967-05-29 | 1969-07-29 | Microwave Ass | Silicon semiconductor with metal-silicide heterojunction |
| DE1932164B2 (de) * | 1968-07-15 | 1972-04-06 | International Business Machines Corp , Armonk, NY (V St A ) | Verfahren zum einlegieren von metall in teilbereiche eines insbesondere aus halbleitermaterial bestehenden substrats |
| US3601888A (en) * | 1969-04-25 | 1971-08-31 | Gen Electric | Semiconductor fabrication technique and devices formed thereby utilizing a doped metal conductor |
-
1970
- 1970-03-17 US US20308A patent/US3604986A/en not_active Expired - Lifetime
-
1971
- 1971-03-09 SE SE02974/71A patent/SE357099B/xx unknown
- 1971-03-13 DE DE2112114A patent/DE2112114C3/de not_active Expired
- 1971-03-15 BE BE764261A patent/BE764261A/xx unknown
- 1971-03-15 NL NL7103420A patent/NL7103420A/xx unknown
- 1971-03-16 FR FR717109219A patent/FR2083349B1/fr not_active Expired
- 1971-03-17 JP JP46014444A patent/JPS5128389B1/ja active Pending
- 1971-04-19 GB GB2403071*A patent/GB1341273A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2112114B2 (de) | 1973-04-05 |
| FR2083349B1 (https=) | 1974-02-15 |
| BE764261A (fr) | 1971-08-02 |
| DE2112114C3 (de) | 1980-01-31 |
| GB1341273A (en) | 1973-12-19 |
| JPS5128389B1 (https=) | 1976-08-18 |
| FR2083349A1 (https=) | 1971-12-17 |
| DE2112114A1 (de) | 1971-10-07 |
| SE357099B (https=) | 1973-06-12 |
| US3604986A (en) | 1971-09-14 |