BE764261A - Transistors pour fonctionnement aux hautes frequences avec emetteurs peu profonds - Google Patents
Transistors pour fonctionnement aux hautes frequences avec emetteurs peu profondsInfo
- Publication number
- BE764261A BE764261A BE764261A BE764261A BE764261A BE 764261 A BE764261 A BE 764261A BE 764261 A BE764261 A BE 764261A BE 764261 A BE764261 A BE 764261A BE 764261 A BE764261 A BE 764261A
- Authority
- BE
- Belgium
- Prior art keywords
- transistors
- shallow
- high frequencies
- frequencies
- shallow transistors
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2030870A | 1970-03-17 | 1970-03-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE764261A true BE764261A (fr) | 1971-08-02 |
Family
ID=21797887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE764261A BE764261A (fr) | 1970-03-17 | 1971-03-15 | Transistors pour fonctionnement aux hautes frequences avec emetteurs peu profonds |
Country Status (8)
Country | Link |
---|---|
US (1) | US3604986A (fr) |
JP (1) | JPS5128389B1 (fr) |
BE (1) | BE764261A (fr) |
DE (1) | DE2112114C3 (fr) |
FR (1) | FR2083349B1 (fr) |
GB (1) | GB1341273A (fr) |
NL (1) | NL7103420A (fr) |
SE (1) | SE357099B (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1355806A (en) * | 1970-12-09 | 1974-06-05 | Mullard Ltd | Methods of manufacturing a semiconductor device |
US3753774A (en) * | 1971-04-05 | 1973-08-21 | Rca Corp | Method for making an intermetallic contact to a semiconductor device |
US3700979A (en) * | 1971-04-07 | 1972-10-24 | Rca Corp | Schottky barrier diode and method of making the same |
US3900344A (en) * | 1973-03-23 | 1975-08-19 | Ibm | Novel integratable schottky barrier structure and method for the fabrication thereof |
US4408216A (en) * | 1978-06-02 | 1983-10-04 | International Rectifier Corporation | Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier for low reverse leakage over wide temperature range |
US4243435A (en) * | 1979-06-22 | 1981-01-06 | International Business Machines Corporation | Bipolar transistor fabrication process with an ion implanted emitter |
JPS57159055A (en) * | 1981-03-25 | 1982-10-01 | Toshiba Corp | Manufacture of semiconductor device |
US5198372A (en) * | 1986-01-30 | 1993-03-30 | Texas Instruments Incorporated | Method for making a shallow junction bipolar transistor and transistor formed thereby |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1356197A (fr) * | 1962-06-29 | 1964-03-20 | Western Electric Co | Contact de semiconducteur |
FR1381871A (fr) * | 1963-02-08 | 1964-12-14 | Int Standard Electric Corp | Méthode de fabrication de semi-conducteurs |
USB421061I5 (fr) * | 1964-12-24 | |||
FR1484390A (fr) * | 1965-06-23 | 1967-06-09 | Ion Physics Corp | Procédé de fabrication de dispositifs semi-conducteurs |
GB1093136A (en) * | 1965-08-27 | 1967-11-29 | Johnson Matthey Co Ltd | Improvements in and relating to the bonding together of metals or alloys |
DE1564704A1 (de) * | 1966-09-12 | 1969-12-11 | Siemens Ag | Hochfrequenztransistor |
US3472712A (en) * | 1966-10-27 | 1969-10-14 | Hughes Aircraft Co | Field-effect device with insulated gate |
US3558352A (en) * | 1966-10-27 | 1971-01-26 | Ibm | Metallization process |
US3458778A (en) * | 1967-05-29 | 1969-07-29 | Microwave Ass | Silicon semiconductor with metal-silicide heterojunction |
FR2014594B1 (fr) * | 1968-07-15 | 1974-02-22 | Ibm | |
US3601888A (en) * | 1969-04-25 | 1971-08-31 | Gen Electric | Semiconductor fabrication technique and devices formed thereby utilizing a doped metal conductor |
-
1970
- 1970-03-17 US US20308A patent/US3604986A/en not_active Expired - Lifetime
-
1971
- 1971-03-09 SE SE02974/71A patent/SE357099B/xx unknown
- 1971-03-13 DE DE2112114A patent/DE2112114C3/de not_active Expired
- 1971-03-15 BE BE764261A patent/BE764261A/fr unknown
- 1971-03-15 NL NL7103420A patent/NL7103420A/xx unknown
- 1971-03-16 FR FR717109219A patent/FR2083349B1/fr not_active Expired
- 1971-03-17 JP JP46014444A patent/JPS5128389B1/ja active Pending
- 1971-04-19 GB GB2403071*A patent/GB1341273A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2083349A1 (fr) | 1971-12-17 |
NL7103420A (fr) | 1971-09-21 |
DE2112114B2 (de) | 1973-04-05 |
DE2112114A1 (de) | 1971-10-07 |
FR2083349B1 (fr) | 1974-02-15 |
GB1341273A (en) | 1973-12-19 |
JPS5128389B1 (fr) | 1976-08-18 |
SE357099B (fr) | 1973-06-12 |
US3604986A (en) | 1971-09-14 |
DE2112114C3 (de) | 1980-01-31 |
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