NL7103303A - - Google Patents

Info

Publication number
NL7103303A
NL7103303A NL7103303A NL7103303A NL7103303A NL 7103303 A NL7103303 A NL 7103303A NL 7103303 A NL7103303 A NL 7103303A NL 7103303 A NL7103303 A NL 7103303A NL 7103303 A NL7103303 A NL 7103303A
Authority
NL
Netherlands
Application number
NL7103303A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7103303A publication Critical patent/NL7103303A/xx

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NL7103303A 1970-03-13 1971-03-12 NL7103303A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2088270 1970-03-13

Publications (1)

Publication Number Publication Date
NL7103303A true NL7103303A (de) 1971-09-15

Family

ID=12039549

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7103303A NL7103303A (de) 1970-03-13 1971-03-12

Country Status (3)

Country Link
US (1) US3657575A (de)
DE (1) DE2111979A1 (de)
NL (1) NL7103303A (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3702943A (en) * 1971-11-05 1972-11-14 Rca Corp Field-effect transistor circuit for detecting changes in voltage level
US3952211A (en) * 1972-07-10 1976-04-20 Motorola, Inc. System for controlling the threshold setting of a field effect memory device
US3862441A (en) * 1972-11-22 1975-01-21 Mitsubishi Electric Corp Mos-fet timing circuit
GB1434332A (en) * 1973-02-15 1976-05-05 Motorola Inc Integrated circuit filtering circuit
US3831041A (en) * 1973-05-03 1974-08-20 Bell Telephone Labor Inc Compensating circuit for semiconductive apparatus
US3864558A (en) * 1973-05-14 1975-02-04 Westinghouse Electric Corp Arithmetic computation of functions
GB1462935A (en) * 1973-06-29 1977-01-26 Ibm Circuit arrangement
US3970875A (en) * 1974-11-21 1976-07-20 International Business Machines Corporation LSI chip compensator for process parameter variations
US4042843A (en) * 1975-06-05 1977-08-16 Electronic Arrays, Inc. Voltage level adaption in MOSFET chips
DE2644402C2 (de) * 1976-10-01 1978-08-24 Standard Elektrik Lorenz Ag, 7000 Stuttgart Elektronischer Schalter
CH614837B (fr) * 1977-07-08 Ebauches Sa Dispositif pour regler, a une valeur determinee, la tension de seuil de transistors igfet d'un circuit integre par polarisation du substrat d'integration.
DE2917989A1 (de) * 1979-05-04 1980-11-13 Bosch Gmbh Robert Elektronische koppelfeldeinrichtung
US4376898A (en) * 1980-02-29 1983-03-15 Data General Corporation Back bias regulator
NZ218649A (en) * 1985-12-20 1989-04-26 Fujitsu Ltd Slice amplifier using two fets and slice level control circuitry
US4978631A (en) * 1986-07-25 1990-12-18 Siliconix Incorporated Current source with a process selectable temperature coefficient
US4769564A (en) * 1987-05-15 1988-09-06 Analog Devices, Inc. Sense amplifier
NL8702734A (nl) * 1987-11-17 1989-06-16 Philips Nv Spanningsvermenigvuldigschakeling en gelijkrichtelement.
US4791318A (en) * 1987-12-15 1988-12-13 Analog Devices, Inc. MOS threshold control circuit
JPH0756931B2 (ja) * 1988-04-18 1995-06-14 三菱電機株式会社 閾値制御型電子装置およびそれを用いた比較器
JPH07105711B2 (ja) * 1990-04-26 1995-11-13 株式会社東芝 入力回路
US5081371A (en) * 1990-11-07 1992-01-14 U.S. Philips Corp. Integrated charge pump circuit with back bias voltage reduction
JPH057149A (ja) * 1991-06-27 1993-01-14 Fujitsu Ltd 出力回路
JP3110262B2 (ja) * 1993-11-15 2000-11-20 松下電器産業株式会社 半導体装置及び半導体装置のオペレーティング方法
JP3238562B2 (ja) * 1994-03-03 2001-12-17 株式会社東芝 半導体集積回路
US6072209A (en) 1997-07-08 2000-06-06 Micro Technology, Inc. Four F2 folded bit line DRAM cell structure having buried bit and word lines
US5973356A (en) * 1997-07-08 1999-10-26 Micron Technology, Inc. Ultra high density flash memory
US5909618A (en) 1997-07-08 1999-06-01 Micron Technology, Inc. Method of making memory cell with vertical transistor and buried word and body lines
US6150687A (en) 1997-07-08 2000-11-21 Micron Technology, Inc. Memory cell having a vertical transistor with buried source/drain and dual gates
US6191470B1 (en) 1997-07-08 2001-02-20 Micron Technology, Inc. Semiconductor-on-insulator memory cell with buried word and body lines
US5892409A (en) * 1997-07-28 1999-04-06 International Business Machines Corporation CMOS process compensation circuit
US5907170A (en) 1997-10-06 1999-05-25 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US6528837B2 (en) 1997-10-06 2003-03-04 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US6066869A (en) * 1997-10-06 2000-05-23 Micron Technology, Inc. Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor
US6025225A (en) * 1998-01-22 2000-02-15 Micron Technology, Inc. Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same
US5963469A (en) 1998-02-24 1999-10-05 Micron Technology, Inc. Vertical bipolar read access for low voltage memory cell
US6304483B1 (en) 1998-02-24 2001-10-16 Micron Technology, Inc. Circuits and methods for a static random access memory using vertical transistors
US6097242A (en) * 1998-02-26 2000-08-01 Micron Technology, Inc. Threshold voltage compensation circuits for low voltage and low power CMOS integrated circuits
US6124729A (en) 1998-02-27 2000-09-26 Micron Technology, Inc. Field programmable logic arrays with vertical transistors
US6043527A (en) 1998-04-14 2000-03-28 Micron Technology, Inc. Circuits and methods for a memory cell with a trench plate trench capacitor and a vertical bipolar read device
US6208164B1 (en) 1998-08-04 2001-03-27 Micron Technology, Inc. Programmable logic array with vertical transistors
KR20060060018A (ko) * 2003-08-12 2006-06-02 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 전자 회로, 제 １ 및 제 ２ ｍｏｓｆｅｔ의 동작 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303413A (en) * 1963-08-15 1967-02-07 Motorola Inc Current regulator
US3450896A (en) * 1964-11-21 1969-06-17 Hitachi Ltd Transistor switching circuit having compensating circuit

Also Published As

Publication number Publication date
DE2111979A1 (de) 1971-10-21
US3657575A (en) 1972-04-18

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