NL7100351A - - Google Patents

Info

Publication number
NL7100351A
NL7100351A NL7100351A NL7100351A NL7100351A NL 7100351 A NL7100351 A NL 7100351A NL 7100351 A NL7100351 A NL 7100351A NL 7100351 A NL7100351 A NL 7100351A NL 7100351 A NL7100351 A NL 7100351A
Authority
NL
Netherlands
Application number
NL7100351A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7100351A publication Critical patent/NL7100351A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/114Nitrides of silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
NL7100351A 1970-01-15 1971-01-12 NL7100351A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2515773 1970-01-15
GB199670 1970-01-15

Publications (1)

Publication Number Publication Date
NL7100351A true NL7100351A (de) 1971-07-19

Family

ID=26237132

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7100351A NL7100351A (de) 1970-01-15 1971-01-12

Country Status (6)

Country Link
US (1) US3730778A (de)
CH (1) CH532842A (de)
DE (1) DE2103468C3 (de)
FR (1) FR2076125B1 (de)
GB (2) GB1332932A (de)
NL (1) NL7100351A (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3808058A (en) * 1972-08-17 1974-04-30 Bell Telephone Labor Inc Fabrication of mesa diode with channel guard
US3853633A (en) * 1972-12-04 1974-12-10 Motorola Inc Method of making a semi planar insulated gate field-effect transistor device with implanted field
US3940288A (en) * 1973-05-16 1976-02-24 Fujitsu Limited Method of making a semiconductor device
GB1447723A (en) * 1974-02-08 1976-08-25 Post Office Semiconductor devices
US3899363A (en) * 1974-06-28 1975-08-12 Ibm Method and device for reducing sidewall conduction in recessed oxide pet arrays
GB1492447A (en) * 1974-07-25 1977-11-16 Siemens Ag Semiconductor devices
US4069067A (en) * 1975-03-20 1978-01-17 Matsushita Electric Industrial Co., Ltd. Method of making a semiconductor device
DE2529598C3 (de) * 1975-07-02 1978-05-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung mit bipolaren Transistoren
FR2341943A1 (fr) * 1976-02-20 1977-09-16 Radiotechnique Compelec Procede de realisation de transistors par implantation ionique
US4046606A (en) * 1976-05-10 1977-09-06 Rca Corporation Simultaneous location of areas having different conductivities
US4113516A (en) * 1977-01-28 1978-09-12 Rca Corporation Method of forming a curved implanted region in a semiconductor body
US4070211A (en) * 1977-04-04 1978-01-24 The United States Of America As Represented By The Secretary Of The Navy Technique for threshold control over edges of devices on silicon-on-sapphire
US4157268A (en) * 1977-06-16 1979-06-05 International Business Machines Corporation Localized oxidation enhancement for an integrated injection logic circuit
JPS56135975A (en) * 1980-03-27 1981-10-23 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
US4746623A (en) * 1986-01-29 1988-05-24 Signetics Corporation Method of making bipolar semiconductor device with wall spacer
US5554544A (en) * 1995-08-09 1996-09-10 United Microelectronics Corporation Field edge manufacture of a T-gate LDD pocket device
GB2323706B (en) * 1997-03-13 2002-02-13 United Microelectronics Corp Method to inhibit the formation of ion implantation induced edge defects
KR100701405B1 (ko) * 2005-11-21 2007-03-28 동부일렉트로닉스 주식회사 모스트랜지스터 및 그 제조방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3220896A (en) * 1961-07-17 1965-11-30 Raytheon Co Transistor
US3388009A (en) * 1965-06-23 1968-06-11 Ion Physics Corp Method of forming a p-n junction by an ionic beam
GB1145121A (en) * 1965-07-30 1969-03-12 Associated Semiconductor Mft Improvements in and relating to transistors
NL153374B (nl) * 1966-10-05 1977-05-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.
GB1228754A (de) * 1967-05-26 1971-04-21
GB1205320A (en) * 1967-10-28 1970-09-16 Nippon Telegraph & Telephone Improvements in or relating to the production of semiconductor devices

Also Published As

Publication number Publication date
DE2103468A1 (de) 1971-07-22
GB1332932A (en) 1973-10-10
GB1332931A (en) 1973-10-10
CH532842A (de) 1973-01-15
FR2076125B1 (de) 1976-05-28
US3730778A (en) 1973-05-01
FR2076125A1 (de) 1971-10-15
DE2103468C3 (de) 1981-04-02
DE2103468B2 (de) 1980-06-19

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