NL7015756A - - Google Patents

Info

Publication number
NL7015756A
NL7015756A NL7015756A NL7015756A NL7015756A NL 7015756 A NL7015756 A NL 7015756A NL 7015756 A NL7015756 A NL 7015756A NL 7015756 A NL7015756 A NL 7015756A NL 7015756 A NL7015756 A NL 7015756A
Authority
NL
Netherlands
Application number
NL7015756A
Other versions
NL151911B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7015756A publication Critical patent/NL7015756A/xx
Publication of NL151911B publication Critical patent/NL151911B/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
NL707015756A 1969-10-27 1970-10-27 Werkwijze voor het via een reactie in de dampfase epitaxiaal doen groeien van een al dan niet gedoteerde gaas1-*p*-laag op een onderlaag en door toepassing van deze werkwijze verkregen gevormd voortbrengsel. NL151911B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8523569A JPS497993B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1969-10-27 1969-10-27

Publications (2)

Publication Number Publication Date
NL7015756A true NL7015756A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-04-29
NL151911B NL151911B (nl) 1977-01-17

Family

ID=13852884

Family Applications (1)

Application Number Title Priority Date Filing Date
NL707015756A NL151911B (nl) 1969-10-27 1970-10-27 Werkwijze voor het via een reactie in de dampfase epitaxiaal doen groeien van een al dan niet gedoteerde gaas1-*p*-laag op een onderlaag en door toepassing van deze werkwijze verkregen gevormd voortbrengsel.

Country Status (3)

Country Link
JP (1) JPS497993B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1308790A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL151911B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740249A (en) * 1984-05-21 1988-04-26 Christopher F. McConnell Method of treating wafers with fluid
US4738272A (en) * 1984-05-21 1988-04-19 Mcconnell Christopher F Vessel and system for treating wafers with fluids
US4633893A (en) * 1984-05-21 1987-01-06 Cfm Technologies Limited Partnership Apparatus for treating semiconductor wafers
US4856544A (en) * 1984-05-21 1989-08-15 Cfm Technologies, Inc. Vessel and system for treating wafers with fluids
US4577650A (en) * 1984-05-21 1986-03-25 Mcconnell Christopher F Vessel and system for treating wafers with fluids
JPH01123133A (ja) * 1987-11-09 1989-05-16 Hitachi Ltd 分光光度計
WO1998035765A1 (en) * 1997-02-18 1998-08-20 Scp Global Technologies Multiple stage wet processing chamber

Also Published As

Publication number Publication date
GB1308790A (en) 1973-03-07
NL151911B (nl) 1977-01-17
JPS497993B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-02-23

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