JPS497993B1 - - Google Patents
Info
- Publication number
- JPS497993B1 JPS497993B1 JP8523569A JP8523569A JPS497993B1 JP S497993 B1 JPS497993 B1 JP S497993B1 JP 8523569 A JP8523569 A JP 8523569A JP 8523569 A JP8523569 A JP 8523569A JP S497993 B1 JPS497993 B1 JP S497993B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8523569A JPS497993B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1969-10-27 | 1969-10-27 | |
GB5106370A GB1308790A (en) | 1969-10-27 | 1970-10-27 | Method of producing a vapour growth layer of gaas1-xpx |
NL707015756A NL151911B (nl) | 1969-10-27 | 1970-10-27 | Werkwijze voor het via een reactie in de dampfase epitaxiaal doen groeien van een al dan niet gedoteerde gaas1-*p*-laag op een onderlaag en door toepassing van deze werkwijze verkregen gevormd voortbrengsel. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8523569A JPS497993B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1969-10-27 | 1969-10-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS497993B1 true JPS497993B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-02-23 |
Family
ID=13852884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8523569A Pending JPS497993B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1969-10-27 | 1969-10-27 |
Country Status (3)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01123133A (ja) * | 1987-11-09 | 1989-05-16 | Hitachi Ltd | 分光光度計 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4740249A (en) * | 1984-05-21 | 1988-04-26 | Christopher F. McConnell | Method of treating wafers with fluid |
US4738272A (en) * | 1984-05-21 | 1988-04-19 | Mcconnell Christopher F | Vessel and system for treating wafers with fluids |
US4633893A (en) * | 1984-05-21 | 1987-01-06 | Cfm Technologies Limited Partnership | Apparatus for treating semiconductor wafers |
US4856544A (en) * | 1984-05-21 | 1989-08-15 | Cfm Technologies, Inc. | Vessel and system for treating wafers with fluids |
US4577650A (en) * | 1984-05-21 | 1986-03-25 | Mcconnell Christopher F | Vessel and system for treating wafers with fluids |
WO1998035765A1 (en) * | 1997-02-18 | 1998-08-20 | Scp Global Technologies | Multiple stage wet processing chamber |
-
1969
- 1969-10-27 JP JP8523569A patent/JPS497993B1/ja active Pending
-
1970
- 1970-10-27 NL NL707015756A patent/NL151911B/xx unknown
- 1970-10-27 GB GB5106370A patent/GB1308790A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01123133A (ja) * | 1987-11-09 | 1989-05-16 | Hitachi Ltd | 分光光度計 |
Also Published As
Publication number | Publication date |
---|---|
GB1308790A (en) | 1973-03-07 |
NL151911B (nl) | 1977-01-17 |
NL7015756A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1971-04-29 |