NL6917686A - - Google Patents
Info
- Publication number
- NL6917686A NL6917686A NL6917686A NL6917686A NL6917686A NL 6917686 A NL6917686 A NL 6917686A NL 6917686 A NL6917686 A NL 6917686A NL 6917686 A NL6917686 A NL 6917686A NL 6917686 A NL6917686 A NL 6917686A
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4822—Beam leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77864768A | 1968-11-25 | 1968-11-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6917686A true NL6917686A (fr) | 1970-05-27 |
Family
ID=25114010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6917686A NL6917686A (fr) | 1968-11-25 | 1969-11-24 |
Country Status (8)
Country | Link |
---|---|
US (1) | US3599060A (fr) |
BE (1) | BE740431A (fr) |
DE (1) | DE1958684A1 (fr) |
FR (1) | FR2024203A1 (fr) |
GB (1) | GB1286834A (fr) |
IE (1) | IE33343B1 (fr) |
NL (1) | NL6917686A (fr) |
SE (1) | SE363192B (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE763522A (fr) * | 1970-03-03 | 1971-07-16 | Licentia Gmbh | Serie de couches de contact pour des elements de construction semi-conducteurs |
FR2394894A1 (fr) * | 1977-06-17 | 1979-01-12 | Thomson Csf | Dispositif de prise de contact sur un element semiconducteur |
DE3011660A1 (de) * | 1980-03-26 | 1981-10-01 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Mehrschichtiger ohmscher anschlusskontakt |
EP0076856A4 (fr) * | 1981-04-21 | 1984-03-01 | Seiichiro Aigoo | Procede de fabrication d'un dispositif a semi-conducteur possedant une electrode saillante plaquee. |
JPS60119777A (ja) * | 1983-11-30 | 1985-06-27 | Mitsubishi Electric Corp | ゲ−トタ−ンオフサイリスタ |
EP0266093B1 (fr) * | 1986-10-27 | 1992-09-23 | Electric Power Research Institute, Inc | Fabrication d'un dispositif semi-conducteur de puissance à couches multiples ayant plusieurs contacts parallèles |
US5184206A (en) * | 1990-10-26 | 1993-02-02 | General Electric Company | Direct thermocompression bonding for thin electronic power chips |
US5206186A (en) * | 1990-10-26 | 1993-04-27 | General Electric Company | Method for forming semiconductor electrical contacts using metal foil and thermocompression bonding |
KR960008558B1 (en) * | 1993-03-02 | 1996-06-28 | Samsung Electronics Co Ltd | Low resistance contact structure and manufacturing method of high integrated semiconductor device |
US5455195A (en) * | 1994-05-06 | 1995-10-03 | Texas Instruments Incorporated | Method for obtaining metallurgical stability in integrated circuit conductive bonds |
US5989993A (en) * | 1996-02-09 | 1999-11-23 | Elke Zakel | Method for galvanic forming of bonding pads |
US6115281A (en) * | 1997-06-09 | 2000-09-05 | Telcordia Technologies, Inc. | Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors |
US6737353B2 (en) * | 2001-06-19 | 2004-05-18 | Advanced Semiconductor Engineering, Inc. | Semiconductor device having bump electrodes |
JP2003059860A (ja) * | 2001-08-13 | 2003-02-28 | Mitsubishi Electric Corp | 半導体装置 |
US6586043B1 (en) | 2002-01-09 | 2003-07-01 | Micron Technology, Inc. | Methods of electroless deposition of nickel, methods of forming under bump metallurgy, and constructions comprising solder bumps |
US6825564B2 (en) | 2002-08-21 | 2004-11-30 | Micron Technology, Inc. | Nickel bonding cap over copper metalized bondpads |
JP7075847B2 (ja) * | 2018-08-28 | 2022-05-26 | 株式会社 日立パワーデバイス | 半導体装置および電力変換装置 |
CN114335197B (zh) * | 2022-03-11 | 2022-08-19 | 浙江爱旭太阳能科技有限公司 | 太阳能电池的导电接触结构、组件及发电系统 |
CN114335257B (zh) * | 2022-03-11 | 2022-08-19 | 浙江爱旭太阳能科技有限公司 | 太阳能电池的制备方法及太阳能电池组件、发电系统 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1011317A (fr) * | 1949-01-17 | 1952-06-23 | Westinghouse Freins & Signaux | Perfectionnements aux procédés de fabrication des cellules photo-électriques à couche d'arrêt et produits industriels nouveaux obtenus |
GB1053069A (fr) * | 1963-06-28 | |||
BE670213A (fr) * | 1964-09-30 | 1900-01-01 | ||
US3458925A (en) * | 1966-01-20 | 1969-08-05 | Ibm | Method of forming solder mounds on substrates |
US3465211A (en) * | 1968-02-01 | 1969-09-02 | Friden Inc | Multilayer contact system for semiconductors |
-
1968
- 1968-11-25 US US3599060D patent/US3599060A/en not_active Expired - Lifetime
-
1969
- 1969-10-13 IE IE1410/69A patent/IE33343B1/xx unknown
- 1969-10-17 BE BE740431D patent/BE740431A/xx unknown
- 1969-10-22 GB GB5184069A patent/GB1286834A/en not_active Expired
- 1969-11-19 SE SE1591969A patent/SE363192B/xx unknown
- 1969-11-22 DE DE19691958684 patent/DE1958684A1/de active Pending
- 1969-11-24 NL NL6917686A patent/NL6917686A/xx unknown
- 1969-11-25 FR FR6940603A patent/FR2024203A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE1958684A1 (de) | 1970-06-18 |
US3599060A (en) | 1971-08-10 |
IE33343L (en) | 1970-05-25 |
FR2024203A1 (fr) | 1970-08-28 |
GB1286834A (en) | 1972-08-23 |
IE33343B1 (en) | 1974-05-29 |
SE363192B (fr) | 1974-01-07 |
BE740431A (fr) | 1970-04-17 |