NL6917150A - - Google Patents
Info
- Publication number
- NL6917150A NL6917150A NL6917150A NL6917150A NL6917150A NL 6917150 A NL6917150 A NL 6917150A NL 6917150 A NL6917150 A NL 6917150A NL 6917150 A NL6917150 A NL 6917150A NL 6917150 A NL6917150 A NL 6917150A
- Authority
- NL
- Netherlands
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80530669A | 1969-03-07 | 1969-03-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6917150A true NL6917150A (xx) | 1970-09-09 |
Family
ID=25191213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6917150A NL6917150A (xx) | 1969-03-07 | 1969-11-14 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3582909A (xx) |
| JP (1) | JPS4910175B1 (xx) |
| DE (1) | DE1959870C3 (xx) |
| FR (1) | FR2034717A1 (xx) |
| GB (1) | GB1254900A (xx) |
| NL (1) | NL6917150A (xx) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3713114A (en) * | 1969-12-18 | 1973-01-23 | Ibm | Data regeneration scheme for stored charge storage cell |
| US3697962A (en) * | 1970-11-27 | 1972-10-10 | Ibm | Two device monolithic bipolar memory array |
| US3699539A (en) * | 1970-12-16 | 1972-10-17 | North American Rockwell | Bootstrapped inverter memory cell |
| GB1303905A (xx) * | 1971-04-13 | 1973-01-24 | ||
| US3699544A (en) * | 1971-05-26 | 1972-10-17 | Gen Electric | Three transistor memory cell |
| US3706891A (en) * | 1971-06-17 | 1972-12-19 | Ibm | A. c. stable storage cell |
| US3744037A (en) * | 1971-10-04 | 1973-07-03 | North American Rockwell | Two-clock memory cell |
| US3765000A (en) * | 1971-11-03 | 1973-10-09 | Honeywell Inf Systems | Memory storage cell with single selection line and single input/output line |
| US3878404A (en) * | 1972-10-30 | 1975-04-15 | Electronic Arrays | Integrated circuit of the MOS variety |
| US4030083A (en) * | 1975-04-04 | 1977-06-14 | Bell Telephone Laboratories, Incorporated | Self-refreshed capacitor memory cell |
| US3979734A (en) * | 1975-06-16 | 1976-09-07 | International Business Machines Corporation | Multiple element charge storage memory cell |
| JPS5967723A (ja) * | 1982-09-27 | 1984-04-17 | Seiko Instr & Electronics Ltd | 半導体装置 |
| US4970689A (en) * | 1988-03-07 | 1990-11-13 | International Business Machines Corporation | Charge amplifying trench memory cell |
| US4914740A (en) * | 1988-03-07 | 1990-04-03 | International Business Corporation | Charge amplifying trench memory cell |
| US6184736B1 (en) | 1992-04-03 | 2001-02-06 | Compaq Computer Corporation | Sinusoidal radio-frequency clock distribution system for synchronization of a computer system |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3286189A (en) * | 1964-01-20 | 1966-11-15 | Ithaco | High gain field-effect transistor-loaded amplifier |
| US3506851A (en) * | 1966-12-14 | 1970-04-14 | North American Rockwell | Field effect transistor driver using capacitor feedback |
| US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
-
1969
- 1969-03-07 US US805306A patent/US3582909A/en not_active Expired - Lifetime
- 1969-11-05 GB GB54296/69A patent/GB1254900A/en not_active Expired
- 1969-11-14 NL NL6917150A patent/NL6917150A/xx unknown
- 1969-11-28 DE DE1959870A patent/DE1959870C3/de not_active Expired
- 1969-12-18 FR FR6943976A patent/FR2034717A1/fr active Pending
-
1970
- 1970-02-13 JP JP45013022A patent/JPS4910175B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE1959870C3 (de) | 1978-06-15 |
| GB1254900A (en) | 1971-11-24 |
| US3582909A (en) | 1971-06-01 |
| FR2034717A1 (xx) | 1970-12-11 |
| DE1959870A1 (de) | 1970-09-24 |
| DE1959870B2 (de) | 1977-10-20 |
| JPS4910175B1 (xx) | 1974-03-08 |