JPS4910175B1 - - Google Patents

Info

Publication number
JPS4910175B1
JPS4910175B1 JP45013022A JP1302270A JPS4910175B1 JP S4910175 B1 JPS4910175 B1 JP S4910175B1 JP 45013022 A JP45013022 A JP 45013022A JP 1302270 A JP1302270 A JP 1302270A JP S4910175 B1 JPS4910175 B1 JP S4910175B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45013022A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4910175B1 publication Critical patent/JPS4910175B1/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Logic Circuits (AREA)
JP45013022A 1969-03-07 1970-02-13 Pending JPS4910175B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80530669A 1969-03-07 1969-03-07

Publications (1)

Publication Number Publication Date
JPS4910175B1 true JPS4910175B1 (ja) 1974-03-08

Family

ID=25191213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45013022A Pending JPS4910175B1 (ja) 1969-03-07 1970-02-13

Country Status (6)

Country Link
US (1) US3582909A (ja)
JP (1) JPS4910175B1 (ja)
DE (1) DE1959870C3 (ja)
FR (1) FR2034717A1 (ja)
GB (1) GB1254900A (ja)
NL (1) NL6917150A (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713114A (en) * 1969-12-18 1973-01-23 Ibm Data regeneration scheme for stored charge storage cell
US3697962A (en) * 1970-11-27 1972-10-10 Ibm Two device monolithic bipolar memory array
US3699539A (en) * 1970-12-16 1972-10-17 North American Rockwell Bootstrapped inverter memory cell
GB1303905A (ja) * 1971-04-13 1973-01-24
US3699544A (en) * 1971-05-26 1972-10-17 Gen Electric Three transistor memory cell
US3706891A (en) * 1971-06-17 1972-12-19 Ibm A. c. stable storage cell
US3744037A (en) * 1971-10-04 1973-07-03 North American Rockwell Two-clock memory cell
US3765000A (en) * 1971-11-03 1973-10-09 Honeywell Inf Systems Memory storage cell with single selection line and single input/output line
US3878404A (en) * 1972-10-30 1975-04-15 Electronic Arrays Integrated circuit of the MOS variety
US4030083A (en) * 1975-04-04 1977-06-14 Bell Telephone Laboratories, Incorporated Self-refreshed capacitor memory cell
US3979734A (en) * 1975-06-16 1976-09-07 International Business Machines Corporation Multiple element charge storage memory cell
JPS5967723A (ja) * 1982-09-27 1984-04-17 Seiko Instr & Electronics Ltd 半導体装置
US4914740A (en) * 1988-03-07 1990-04-03 International Business Corporation Charge amplifying trench memory cell
US4970689A (en) * 1988-03-07 1990-11-13 International Business Machines Corporation Charge amplifying trench memory cell
US6184736B1 (en) 1992-04-03 2001-02-06 Compaq Computer Corporation Sinusoidal radio-frequency clock distribution system for synchronization of a computer system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3286189A (en) * 1964-01-20 1966-11-15 Ithaco High gain field-effect transistor-loaded amplifier
US3506851A (en) * 1966-12-14 1970-04-14 North American Rockwell Field effect transistor driver using capacitor feedback
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory

Also Published As

Publication number Publication date
DE1959870B2 (de) 1977-10-20
FR2034717A1 (ja) 1970-12-11
GB1254900A (en) 1971-11-24
NL6917150A (ja) 1970-09-09
DE1959870A1 (de) 1970-09-24
US3582909A (en) 1971-06-01
DE1959870C3 (de) 1978-06-15

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