NL69164C - - Google Patents
Info
- Publication number
- NL69164C NL69164C NL69164DA NL69164C NL 69164 C NL69164 C NL 69164C NL 69164D A NL69164D A NL 69164DA NL 69164 C NL69164 C NL 69164C
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mining & Mineral Resources (AREA)
- Mechanical Engineering (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR937189X | 1948-08-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL69164C true NL69164C (en:Method) | 1900-01-01 |
Family
ID=9457770
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL69164D NL69164C (en:Method) | 1948-08-23 | ||
| NL707015093A NL142932B (nl) | 1948-08-23 | Werkwijze ter bereiding van butadieen-1.3 door reactie van een buteen met moleculaire zuurstof. |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL707015093A NL142932B (nl) | 1948-08-23 | Werkwijze ter bereiding van butadieen-1.3 door reactie van een buteen met moleculaire zuurstof. |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE490440A (en:Method) |
| CH (1) | CH282856A (en:Method) |
| DE (1) | DE937189C (en:Method) |
| FR (1) | FR1010469A (en:Method) |
| GB (1) | GB674244A (en:Method) |
| NL (2) | NL142932B (en:Method) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1291322B (de) * | 1954-03-16 | 1969-03-27 | Siemens Ag | Verfahren zum Ziehen eines Zonen unterschiedlicher Dotierung aufweisenden Halbleiterkristalls |
| DE1219233B (de) * | 1955-04-18 | 1966-06-16 | Siemens Ag | Verfahren zum Herstellen von zur Verwendung in Halbleiteranordnungen bestimmtem Germanium oder Silizium mit einer definiert eingestellten Diffusionslaenge der Ladungstraeger |
| DE1084840B (de) * | 1957-01-23 | 1960-07-07 | Intermetall | Verfahren zur Herstellung von kugelfoermigen Halbleiterkoerpern aus Silizium von Halbleiteranordnungen, z. B. Spitzen-Gleichrichtern oder Spitzen-Transistoren |
| NL235410A (en:Method) * | 1959-01-23 | 1900-01-01 |
-
0
- NL NL69164D patent/NL69164C/xx active
- BE BE490440D patent/BE490440A/xx unknown
- NL NL707015093A patent/NL142932B/xx unknown
-
1948
- 1948-08-23 FR FR1010469D patent/FR1010469A/fr not_active Expired
-
1949
- 1949-07-14 CH CH282856D patent/CH282856A/fr unknown
- 1949-07-16 DE DEP49064A patent/DE937189C/de not_active Expired
- 1949-08-03 GB GB20192/49A patent/GB674244A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL142932B (nl) | |
| DE937189C (de) | 1955-12-29 |
| BE490440A (en:Method) | 1900-01-01 |
| GB674244A (en) | 1952-06-18 |
| FR1010469A (fr) | 1952-06-11 |
| CH282856A (fr) | 1952-05-15 |