GB674244A - Method of and apparatus for the treatment of germanium - Google Patents

Method of and apparatus for the treatment of germanium

Info

Publication number
GB674244A
GB674244A GB20192/49A GB2019249A GB674244A GB 674244 A GB674244 A GB 674244A GB 20192/49 A GB20192/49 A GB 20192/49A GB 2019249 A GB2019249 A GB 2019249A GB 674244 A GB674244 A GB 674244A
Authority
GB
United Kingdom
Prior art keywords
germanium
treatment
mould
molten
aug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20192/49A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie des Freins et Signaux Westinghouse SA
Original Assignee
Compagnie des Freins et Signaux Westinghouse SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie des Freins et Signaux Westinghouse SA filed Critical Compagnie des Freins et Signaux Westinghouse SA
Publication of GB674244A publication Critical patent/GB674244A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

674,244. Casting processes. COMPAGNIE DES FREINS ET SIGNAUX WESTING- HOUSE. Aug. 3, 1949 [Aug. 23, 1948], No. 20192/49. Class 83 (i). [Also in Group II] After treatment of molten germanium by an inert gas (see Group II) in the apparatus shown in Fig. 2, the molten germanium in crucible 1 is cast by inverting the apparatus and thus causing the germanium to fall into a mould 16. In a modification of the apparatus, shown in Fig. 3, for casting germanium in rod form, molten germanium, after treatment with gas which passes from tube 21, through mould 17 and a removable plug having capillary channels inserted in passage 18, is cast in mould 17 by removal of the said plug.
GB20192/49A 1948-08-23 1949-08-03 Method of and apparatus for the treatment of germanium Expired GB674244A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR937189X 1948-08-23

Publications (1)

Publication Number Publication Date
GB674244A true GB674244A (en) 1952-06-18

Family

ID=9457770

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20192/49A Expired GB674244A (en) 1948-08-23 1949-08-03 Method of and apparatus for the treatment of germanium

Country Status (6)

Country Link
BE (1) BE490440A (en)
CH (1) CH282856A (en)
DE (1) DE937189C (en)
FR (1) FR1010469A (en)
GB (1) GB674244A (en)
NL (2) NL69164C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1219233B (en) * 1955-04-18 1966-06-16 Siemens Ag Process for the production of germanium or silicon intended for use in semiconductor arrangements with a defined diffusion length of the charge carriers

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1291322B (en) * 1954-03-16 1969-03-27 Siemens Ag Method for growing a semiconductor crystal having zones of different doping
DE1084840B (en) * 1957-01-23 1960-07-07 Intermetall Process for the production of spherical semiconductor bodies made of silicon from semiconductor devices, e.g. B. peak rectifiers or peak transistors
NL101161C (en) * 1959-01-23 1900-01-01

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1219233B (en) * 1955-04-18 1966-06-16 Siemens Ag Process for the production of germanium or silicon intended for use in semiconductor arrangements with a defined diffusion length of the charge carriers

Also Published As

Publication number Publication date
BE490440A (en) 1900-01-01
NL142932B (en)
DE937189C (en) 1955-12-29
NL69164C (en) 1900-01-01
CH282856A (en) 1952-05-15
FR1010469A (en) 1952-06-11

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