FR1010469A - Preparation of germanium for use of its semiconductor properties - Google Patents

Preparation of germanium for use of its semiconductor properties

Info

Publication number
FR1010469A
FR1010469A FR1010469DA FR1010469A FR 1010469 A FR1010469 A FR 1010469A FR 1010469D A FR1010469D A FR 1010469DA FR 1010469 A FR1010469 A FR 1010469A
Authority
FR
France
Prior art keywords
germanium
preparation
semiconductor properties
semiconductor
properties
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie des Freins et Signaux Westinghouse SA
Original Assignee
Compagnie des Freins et Signaux Westinghouse SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie des Freins et Signaux Westinghouse SA filed Critical Compagnie des Freins et Signaux Westinghouse SA
Application granted granted Critical
Publication of FR1010469A publication Critical patent/FR1010469A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1010469D 1948-08-23 1948-08-23 Preparation of germanium for use of its semiconductor properties Expired FR1010469A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR937189X 1948-08-23

Publications (1)

Publication Number Publication Date
FR1010469A true FR1010469A (en) 1952-06-11

Family

ID=9457770

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1010469D Expired FR1010469A (en) 1948-08-23 1948-08-23 Preparation of germanium for use of its semiconductor properties

Country Status (6)

Country Link
BE (1) BE490440A (en)
CH (1) CH282856A (en)
DE (1) DE937189C (en)
FR (1) FR1010469A (en)
GB (1) GB674244A (en)
NL (2) NL69164C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1084840B (en) * 1957-01-23 1960-07-07 Intermetall Process for the production of spherical semiconductor bodies made of silicon from semiconductor devices, e.g. B. peak rectifiers or peak transistors

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1291322B (en) * 1954-03-16 1969-03-27 Siemens Ag Method for growing a semiconductor crystal having zones of different doping
DE1219233B (en) * 1955-04-18 1966-06-16 Siemens Ag Process for the production of germanium or silicon intended for use in semiconductor arrangements with a defined diffusion length of the charge carriers
NL101161C (en) * 1959-01-23 1900-01-01

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1084840B (en) * 1957-01-23 1960-07-07 Intermetall Process for the production of spherical semiconductor bodies made of silicon from semiconductor devices, e.g. B. peak rectifiers or peak transistors

Also Published As

Publication number Publication date
NL69164C (en) 1900-01-01
CH282856A (en) 1952-05-15
BE490440A (en) 1900-01-01
DE937189C (en) 1955-12-29
GB674244A (en) 1952-06-18
NL142932B (en)

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