NL6914966A - - Google Patents
Info
- Publication number
- NL6914966A NL6914966A NL6914966A NL6914966A NL6914966A NL 6914966 A NL6914966 A NL 6914966A NL 6914966 A NL6914966 A NL 6914966A NL 6914966 A NL6914966 A NL 6914966A NL 6914966 A NL6914966 A NL 6914966A
- Authority
- NL
- Netherlands
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/071—Heating, selective
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/926—Elongated lead extending axially through another elongated lead
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76468068A | 1968-10-03 | 1968-10-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6914966A true NL6914966A (xx) | 1970-04-07 |
Family
ID=25071440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6914966A NL6914966A (xx) | 1968-10-03 | 1969-10-03 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3584183A (xx) |
DE (1) | DE1950070C3 (xx) |
FR (1) | FR2019864A1 (xx) |
GB (1) | GB1225086A (xx) |
NL (1) | NL6914966A (xx) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH284471A4 (xx) * | 1971-02-25 | 1972-07-14 | ||
US3818252A (en) * | 1971-12-20 | 1974-06-18 | Hitachi Ltd | Universal logical integrated circuit |
US3814895A (en) * | 1971-12-27 | 1974-06-04 | Electroglas Inc | Laser scriber control system |
US3740523A (en) * | 1971-12-30 | 1973-06-19 | Bell Telephone Labor Inc | Encoding of read only memory by laser vaporization |
US3881175A (en) * | 1973-12-26 | 1975-04-29 | Lsi Systems Inc | Integrated circuit SOS memory subsystem and method of making same |
US3882471A (en) * | 1974-04-19 | 1975-05-06 | Westinghouse Electric Corp | Apparatus and method of operating a high-density memory |
DE2511390C2 (de) * | 1975-03-15 | 1984-03-15 | Agfa-Gevaert Ag, 5090 Leverkusen | Verfahren und Vorrichtung zur Herstellung von Tageslichtprojektionsschirmen sowie nach diesem Verfahren hergestellter Tageslichtprojektionsschirm |
US4016016A (en) * | 1975-05-22 | 1977-04-05 | Rca Corporation | Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices |
US4190759A (en) * | 1975-08-27 | 1980-02-26 | Hitachi, Ltd. | Processing of photomask |
US4059461A (en) * | 1975-12-10 | 1977-11-22 | Massachusetts Institute Of Technology | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof |
US4078243A (en) * | 1975-12-12 | 1978-03-07 | International Business Machines Corporation | Phototransistor array having uniform current response and method of manufacture |
US4306246A (en) * | 1976-09-29 | 1981-12-15 | Motorola, Inc. | Method for trimming active semiconductor devices |
US4240094A (en) * | 1978-03-20 | 1980-12-16 | Harris Corporation | Laser-configured logic array |
US4328410A (en) * | 1978-08-24 | 1982-05-04 | Slivinsky Sandra H | Laser skiving system |
US4198696A (en) * | 1978-10-24 | 1980-04-15 | International Business Machines Corporation | Laser cut storage cell |
US4238839A (en) * | 1979-04-19 | 1980-12-09 | National Semiconductor Corporation | Laser programmable read only memory |
US4423432A (en) * | 1980-01-28 | 1983-12-27 | Rca Corporation | Apparatus for decoding multiple input lines |
US4589008A (en) * | 1980-01-28 | 1986-05-13 | Rca Corporation | Apparatus for electrically joining the ends of substantially parallel semiconductor lines |
US4533934A (en) * | 1980-10-02 | 1985-08-06 | Westinghouse Electric Corp. | Device structures for high density integrated circuits |
JPS5846174B2 (ja) * | 1981-03-03 | 1983-10-14 | 株式会社東芝 | 半導体集積回路 |
JPS5856355A (ja) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | 半導体集積回路装置 |
JPS58170037A (ja) * | 1982-03-31 | 1983-10-06 | Toshiba Corp | 配線の切断方法及び切断装置 |
DE3377555D1 (en) * | 1982-05-12 | 1988-09-01 | Toshiba Kk | Semiconductor device capable of structural selection |
JPS60176250A (ja) * | 1984-02-23 | 1985-09-10 | Toshiba Corp | 半導体装置の製造方法 |
JPS61268052A (ja) * | 1984-11-06 | 1986-11-27 | Nec Corp | 半導体ウエハ−におけるレ−ザトリミング方法 |
JPH0740101B2 (ja) * | 1985-04-23 | 1995-05-01 | 旭硝子株式会社 | 薄膜トランジスタ |
US4745258A (en) * | 1985-08-27 | 1988-05-17 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for laser-cutting metal interconnections in a semiconductor device |
FR2601500B1 (fr) * | 1986-07-11 | 1988-10-21 | Bull Sa | Procede de liaison programmable par laser de deux conducteurs superposes du reseau d'interconnexion d'un circuit integre, et circuit integre en resultant |
JP3150322B2 (ja) * | 1990-05-18 | 2001-03-26 | 株式会社日立製作所 | レーザによる配線切断加工方法及びレーザ加工装置 |
US5200922A (en) * | 1990-10-24 | 1993-04-06 | Rao Kameswara K | Redundancy circuit for high speed EPROM and flash memory devices |
US5893100A (en) * | 1996-11-27 | 1999-04-06 | Teralogic, Incorporated | System and method for tree ordered coding of sparse data sets |
US8585956B1 (en) | 2009-10-23 | 2013-11-19 | Therma-Tru, Inc. | Systems and methods for laser marking work pieces |
US8894831B2 (en) * | 2012-06-27 | 2014-11-25 | Roche Diagnostics Operations, Inc. | Printed memory on strip |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3330696A (en) * | 1967-07-11 | Method of fabricating thin film capacitors | ||
US3314073A (en) * | 1964-10-20 | 1967-04-11 | Prec Instr Company | Laser recorder with vaporizable film |
US3400456A (en) * | 1965-08-30 | 1968-09-10 | Western Electric Co | Methods of manufacturing thin film components |
US3377513A (en) * | 1966-05-02 | 1968-04-09 | North American Rockwell | Integrated circuit diode matrix |
US3465091A (en) * | 1967-02-24 | 1969-09-02 | Texas Instruments Inc | Universal circuit board and method of manufacture |
US3472998A (en) * | 1967-04-03 | 1969-10-14 | Nasa | Laser apparatus for removing material from rotating objects |
US3469076A (en) * | 1967-06-01 | 1969-09-23 | Producto Machine Co The | Apparatus for removing flashing from molded plastic articles |
-
1968
- 1968-10-03 US US764680A patent/US3584183A/en not_active Expired - Lifetime
-
1969
- 1969-10-03 FR FR6933947A patent/FR2019864A1/fr not_active Withdrawn
- 1969-10-03 DE DE1950070A patent/DE1950070C3/de not_active Expired
- 1969-10-03 NL NL6914966A patent/NL6914966A/xx unknown
- 1969-10-03 GB GB1225086D patent/GB1225086A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1950070C3 (de) | 1974-01-17 |
DE1950070B2 (de) | 1973-06-14 |
DE1950070A1 (de) | 1970-10-29 |
GB1225086A (xx) | 1971-03-17 |
FR2019864A1 (xx) | 1970-07-10 |
US3584183A (en) | 1971-06-08 |