NL6912876A - - Google Patents
Info
- Publication number
- NL6912876A NL6912876A NL6912876A NL6912876A NL6912876A NL 6912876 A NL6912876 A NL 6912876A NL 6912876 A NL6912876 A NL 6912876A NL 6912876 A NL6912876 A NL 6912876A NL 6912876 A NL6912876 A NL 6912876A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
- H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB40308/68A GB1269359A (en) | 1968-08-22 | 1968-08-22 | Improvements in or relating to semiconductors and methods of doping semiconductors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6912876A true NL6912876A (https=) | 1970-02-24 |
Family
ID=10414253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6912876A NL6912876A (https=) | 1968-08-22 | 1969-08-22 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3589949A (https=) |
| DE (1) | DE1942598A1 (https=) |
| FR (1) | FR2016207A1 (https=) |
| GB (1) | GB1269359A (https=) |
| NL (1) | NL6912876A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2083348A1 (en) * | 1970-03-17 | 1971-12-17 | Western Electric Co | Doping a silicon substrate by ion bombard-ment |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3918996A (en) * | 1970-11-02 | 1975-11-11 | Texas Instruments Inc | Formation of integrated circuits using proton enhanced diffusion |
| US3796929A (en) * | 1970-12-09 | 1974-03-12 | Philips Nv | Junction isolated integrated circuit resistor with crystal damage near isolation junction |
| US3856578A (en) * | 1972-03-13 | 1974-12-24 | Bell Telephone Labor Inc | Bipolar transistors and method of manufacture |
| US3900345A (en) * | 1973-08-02 | 1975-08-19 | Motorola Inc | Thin low temperature epi regions by conversion of an amorphous layer |
| FR2241875B1 (https=) * | 1973-08-21 | 1977-09-09 | Radiotechnique Compelec | |
| US3976511A (en) * | 1975-06-30 | 1976-08-24 | Ibm Corporation | Method for fabricating integrated circuit structures with full dielectric isolation by ion bombardment |
| US4133704A (en) * | 1977-01-17 | 1979-01-09 | General Motors Corporation | Method of forming diodes by amorphous implantations and concurrent annealing, monocrystalline reconversion and oxide passivation in <100> N-type silicon |
| US4144100A (en) * | 1977-12-02 | 1979-03-13 | General Motors Corporation | Method of low dose phoshorus implantation for oxide passivated diodes in <10> P-type silicon |
| US4240843A (en) * | 1978-05-23 | 1980-12-23 | Western Electric Company, Inc. | Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing |
| US4177084A (en) * | 1978-06-09 | 1979-12-04 | Hewlett-Packard Company | Method for producing a low defect layer of silicon-on-sapphire wafer |
| US4358326A (en) * | 1980-11-03 | 1982-11-09 | International Business Machines Corporation | Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing |
| JPS58132922A (ja) * | 1982-02-01 | 1983-08-08 | Toshiba Corp | 半導体装置の製造方法 |
| JPS58223320A (ja) * | 1982-06-22 | 1983-12-24 | Ushio Inc | 不純物拡散方法 |
| JPS5935425A (ja) * | 1982-08-23 | 1984-02-27 | Toshiba Corp | 半導体装置の製造方法 |
| US4456489A (en) * | 1982-10-15 | 1984-06-26 | Motorola, Inc. | Method of forming a shallow and high conductivity boron doped layer in silicon |
| JPS6072272A (ja) * | 1983-09-28 | 1985-04-24 | Toshiba Corp | 半導体装置の製造方法 |
| US4522657A (en) * | 1983-10-20 | 1985-06-11 | Westinghouse Electric Corp. | Low temperature process for annealing shallow implanted N+/P junctions |
| JPH01220822A (ja) * | 1988-02-29 | 1989-09-04 | Mitsubishi Electric Corp | 化合物半導体装置の製造方法 |
| US5290712A (en) * | 1989-03-31 | 1994-03-01 | Canon Kabushiki Kaisha | Process for forming crystalline semiconductor film |
| DE4035842A1 (de) * | 1990-11-10 | 1992-05-14 | Telefunken Electronic Gmbh | Verfahren zur rekristallisierung voramorphisierter halbleiteroberflaechenzonen |
| EP1192299A1 (en) * | 1999-05-31 | 2002-04-03 | De Beers Industrial Diamond Division (Proprietary) Limited | Doping of crystalline substrates |
| RU2193080C2 (ru) * | 2000-04-05 | 2002-11-20 | Объединенный Институт Ядерных Исследований | Способ ионного легирования твердых тел |
-
1968
- 1968-08-22 GB GB40308/68A patent/GB1269359A/en not_active Expired
-
1969
- 1969-08-18 US US850718A patent/US3589949A/en not_active Expired - Lifetime
- 1969-08-21 DE DE19691942598 patent/DE1942598A1/de active Pending
- 1969-08-22 FR FR6928892A patent/FR2016207A1/fr not_active Withdrawn
- 1969-08-22 NL NL6912876A patent/NL6912876A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2083348A1 (en) * | 1970-03-17 | 1971-12-17 | Western Electric Co | Doping a silicon substrate by ion bombard-ment |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1942598A1 (de) | 1970-02-26 |
| US3589949A (en) | 1971-06-29 |
| GB1269359A (en) | 1972-04-06 |
| FR2016207A1 (https=) | 1970-05-08 |