NL6900587A - - Google Patents

Info

Publication number
NL6900587A
NL6900587A NL6900587A NL6900587A NL6900587A NL 6900587 A NL6900587 A NL 6900587A NL 6900587 A NL6900587 A NL 6900587A NL 6900587 A NL6900587 A NL 6900587A NL 6900587 A NL6900587 A NL 6900587A
Authority
NL
Netherlands
Application number
NL6900587A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6900587A publication Critical patent/NL6900587A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45506—Turbulent flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6900587A 1968-01-15 1969-01-14 NL6900587A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0113723 1968-01-15

Publications (1)

Publication Number Publication Date
NL6900587A true NL6900587A (en:Method) 1969-07-17

Family

ID=7532705

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6900587A NL6900587A (en:Method) 1968-01-15 1969-01-14

Country Status (6)

Country Link
US (1) US3578495A (en:Method)
JP (1) JPS507420B1 (en:Method)
CH (1) CH529223A (en:Method)
FR (1) FR1597833A (en:Method)
GB (1) GB1247585A (en:Method)
NL (1) NL6900587A (en:Method)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805735A (en) * 1970-07-27 1974-04-23 Siemens Ag Device for indiffusing dopants into semiconductor wafers
US3745969A (en) * 1971-04-19 1973-07-17 Motorola Inc Offset top ejection vapor deposition apparatus
US3742904A (en) * 1971-06-03 1973-07-03 Motorola Inc Steam generator and gas insertion device
DE2131722A1 (de) * 1971-06-25 1972-12-28 Siemens Ag Anordnung zum Eindiffundieren von Dotierstoffen
US3830194A (en) * 1972-09-28 1974-08-20 Applied Materials Tech Susceptor support structure and docking assembly
US4129090A (en) * 1973-02-28 1978-12-12 Hitachi, Ltd. Apparatus for diffusion into semiconductor wafers
US4279947A (en) * 1975-11-25 1981-07-21 Motorola, Inc. Deposition of silicon nitride
US4108106A (en) * 1975-12-29 1978-08-22 Tylan Corporation Cross-flow reactor
US4211182A (en) * 1978-05-05 1980-07-08 Rca Corporation Diffusion apparatus
JPS5942970B2 (ja) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 半導体熱処理用反応管
JPS5944771B2 (ja) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 半導体熱処理炉
JPS5923464B2 (ja) * 1979-04-18 1984-06-02 テルサ−ムコ株式会社 半導体熱処理装置
US4256053A (en) * 1979-08-17 1981-03-17 Dozier Alfred R Chemical vapor reaction system
US4287851A (en) * 1980-01-16 1981-09-08 Dozier Alfred R Mounting and excitation system for reaction in the plasma state
US4348580A (en) * 1980-05-07 1982-09-07 Tylan Corporation Energy efficient furnace with movable end wall
DE3020264A1 (de) * 1980-05-28 1981-12-03 Siemens AG, 1000 Berlin und 8000 München Dichter, gekuehlter verschluss fuer prozessrohre, insbesondere in der halbleiterfertigung
JPS5894161A (ja) * 1981-12-01 1983-06-04 Matsushita Electric Ind Co Ltd テ−プレコ−ダ
JPS59928A (ja) * 1982-06-25 1984-01-06 Ushio Inc 光加熱装置
US4518455A (en) * 1982-09-02 1985-05-21 At&T Technologies, Inc. CVD Process
US4651673A (en) * 1982-09-02 1987-03-24 At&T Technologies, Inc. CVD apparatus
US4501777A (en) * 1982-09-22 1985-02-26 The United States Of America As Represented By The Secretary Of The Army Method of sealing of ceramic wall structures
US4997677A (en) * 1987-08-31 1991-03-05 Massachusetts Institute Of Technology Vapor phase reactor for making multilayer structures
EP0653500A1 (en) * 1993-11-12 1995-05-17 International Business Machines Corporation CVD reactor for improved film thickness uniformity deposition
JP3137164B2 (ja) * 1994-06-02 2001-02-19 信越半導体株式会社 熱処理炉
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
US5741363A (en) * 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
TW498102B (en) * 1998-12-28 2002-08-11 Futaba Denshi Kogyo Kk A process for preparing GaN fluorescent substance
US20120264072A1 (en) * 2011-02-03 2012-10-18 Stion Corporation Method and apparatus for performing reactive thermal treatment of thin film pv material
CN103103499A (zh) * 2011-11-11 2013-05-15 中国科学院沈阳科学仪器研制中心有限公司 一种大型板式pecvd设备真空腔室的迷宫进气装置
JP2017057435A (ja) * 2015-09-14 2017-03-23 株式会社テクノファイン 原子層堆積装置

Also Published As

Publication number Publication date
DE1696609B2 (de) 1976-03-11
GB1247585A (en) 1971-09-22
CH529223A (de) 1972-10-15
DE1696609A1 (de) 1971-11-18
JPS507420B1 (en:Method) 1975-03-25
US3578495A (en) 1971-05-11
FR1597833A (en:Method) 1970-06-29

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