NL6900129A - - Google Patents
Info
- Publication number
- NL6900129A NL6900129A NL6900129A NL6900129A NL6900129A NL 6900129 A NL6900129 A NL 6900129A NL 6900129 A NL6900129 A NL 6900129A NL 6900129 A NL6900129 A NL 6900129A NL 6900129 A NL6900129 A NL 6900129A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69605768A | 1968-01-05 | 1968-01-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6900129A true NL6900129A (enrdf_load_stackoverflow) | 1969-07-08 |
Family
ID=24795535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6900129A NL6900129A (enrdf_load_stackoverflow) | 1968-01-05 | 1969-01-03 |
Country Status (3)
| Country | Link |
|---|---|
| BE (1) | BE726473A (enrdf_load_stackoverflow) |
| GB (1) | GB1186127A (enrdf_load_stackoverflow) |
| NL (1) | NL6900129A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59190300A (ja) * | 1983-04-08 | 1984-10-29 | Hitachi Ltd | 半導体製造方法および装置 |
| WO2001006041A1 (en) * | 1999-07-19 | 2001-01-25 | Topsil Semiconductor Materials A/S | Method and apparatus for production of a doped feed rod by ion implantation |
-
1968
- 1968-09-25 GB GB4548768A patent/GB1186127A/en not_active Expired
-
1969
- 1969-01-03 NL NL6900129A patent/NL6900129A/xx unknown
- 1969-01-03 BE BE726473D patent/BE726473A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1186127A (en) | 1970-04-02 |
| BE726473A (enrdf_load_stackoverflow) | 1969-07-03 |