NL6813787A - - Google Patents
Info
- Publication number
- NL6813787A NL6813787A NL6813787A NL6813787A NL6813787A NL 6813787 A NL6813787 A NL 6813787A NL 6813787 A NL6813787 A NL 6813787A NL 6813787 A NL6813787 A NL 6813787A NL 6813787 A NL6813787 A NL 6813787A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/141—Self-alignment coat gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67063567A | 1967-09-26 | 1967-09-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6813787A true NL6813787A (xx) | 1969-03-28 |
Family
ID=24691194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6813787A NL6813787A (xx) | 1967-09-26 | 1968-09-26 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3528168A (xx) |
| DE (1) | DE1789024A1 (xx) |
| FR (1) | FR1585978A (xx) |
| GB (1) | GB1242896A (xx) |
| NL (1) | NL6813787A (xx) |
| SE (1) | SE351526B (xx) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3781806A (en) * | 1969-12-15 | 1973-12-25 | Nippon Telegraph & Telephone | Semiconductor switching element and a semiconductor switching involving the same |
| US3659161A (en) * | 1970-01-02 | 1972-04-25 | Licentia Gmbh | Blocking field effect transistor |
| DE2120388A1 (de) * | 1970-04-28 | 1971-12-16 | Agency Ind Science Techn | Verbindungshalbleitervorrichtung |
| DE2021923B2 (de) * | 1970-05-05 | 1976-07-22 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen eines feldeffekttransistors mit isolierter gateelektrode |
| US3753806A (en) * | 1970-09-23 | 1973-08-21 | Motorola Inc | Increasing field inversion voltage of metal oxide on silicon integrated circuits |
| US3700976A (en) * | 1970-11-02 | 1972-10-24 | Hughes Aircraft Co | Insulated gate field effect transistor adapted for microwave applications |
| US3703667A (en) * | 1971-03-17 | 1972-11-21 | Rca Corp | Shaped riser on substrate step for promoting metal film continuity |
| USRE28952E (en) * | 1971-03-17 | 1976-08-31 | Rca Corporation | Shaped riser on substrate step for promoting metal film continuity |
| JPS575052B1 (xx) * | 1971-06-16 | 1982-01-28 | ||
| JPS5712542B2 (xx) * | 1971-08-11 | 1982-03-11 | ||
| US3927418A (en) * | 1971-12-11 | 1975-12-16 | Sony Corp | Charge transfer device |
| FR2228301B1 (xx) * | 1973-05-03 | 1977-10-14 | Ibm | |
| JPS5069975A (xx) * | 1973-10-23 | 1975-06-11 | ||
| US4830975A (en) * | 1983-01-13 | 1989-05-16 | National Semiconductor Corporation | Method of manufacture a primos device |
| US4588454A (en) * | 1984-12-21 | 1986-05-13 | Linear Technology Corporation | Diffusion of dopant into a semiconductor wafer |
| US5293073A (en) * | 1989-06-27 | 1994-03-08 | Kabushiki Kaisha Toshiba | Electrode structure of a semiconductor device which uses a copper wire as a bonding wire |
| US5882958A (en) * | 1997-09-03 | 1999-03-16 | Wanlass; Frank M. | Damascene method for source drain definition of silicon on insulator MOS transistors |
| US6180465B1 (en) * | 1998-11-20 | 2001-01-30 | Advanced Micro Devices | Method of making high performance MOSFET with channel scaling mask feature |
| US6210999B1 (en) | 1998-12-04 | 2001-04-03 | Advanced Micro Devices, Inc. | Method and test structure for low-temperature integration of high dielectric constant gate dielectrics into self-aligned semiconductor devices |
| US6200865B1 (en) * | 1998-12-04 | 2001-03-13 | Advanced Micro Devices, Inc. | Use of sacrificial dielectric structure to form semiconductor device with a self-aligned threshold adjust and overlying low-resistance gate |
| JP2009141260A (ja) * | 2007-12-10 | 2009-06-25 | Elpida Memory Inc | 半導体装置、及びその製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL297602A (xx) * | 1962-09-07 | |||
| GB1094068A (en) * | 1963-12-26 | 1967-12-06 | Rca Corp | Semiconductive devices and methods of producing them |
| US3246173A (en) * | 1964-01-29 | 1966-04-12 | Rca Corp | Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate |
| US3374407A (en) * | 1964-06-01 | 1968-03-19 | Rca Corp | Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic |
| US3305708A (en) * | 1964-11-25 | 1967-02-21 | Rca Corp | Insulated-gate field-effect semiconductor device |
| GB1045429A (en) * | 1965-03-31 | 1966-10-12 | Standard Telephones Cables Ltd | Transistors |
-
1967
- 1967-09-26 US US670635A patent/US3528168A/en not_active Expired - Lifetime
-
1968
- 1968-09-11 GB GB43152/68A patent/GB1242896A/en not_active Expired
- 1968-09-19 SE SE12656/68A patent/SE351526B/xx unknown
- 1968-09-24 FR FR1585978D patent/FR1585978A/fr not_active Expired
- 1968-09-25 DE DE19681789024 patent/DE1789024A1/de active Pending
- 1968-09-26 NL NL6813787A patent/NL6813787A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1789024A1 (de) | 1972-01-05 |
| FR1585978A (xx) | 1970-02-06 |
| GB1242896A (en) | 1971-08-18 |
| US3528168A (en) | 1970-09-15 |
| SE351526B (xx) | 1972-11-27 |