NL6806442A - - Google Patents

Info

Publication number
NL6806442A
NL6806442A NL6806442A NL6806442A NL6806442A NL 6806442 A NL6806442 A NL 6806442A NL 6806442 A NL6806442 A NL 6806442A NL 6806442 A NL6806442 A NL 6806442A NL 6806442 A NL6806442 A NL 6806442A
Authority
NL
Netherlands
Application number
NL6806442A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6806442A publication Critical patent/NL6806442A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/984—Preparation from elemental silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/102—Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6806442A 1967-05-08 1968-05-07 NL6806442A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB21197/67A GB1242051A (en) 1967-05-08 1967-05-08 Improvements in the manufacture of silicon carbide

Publications (1)

Publication Number Publication Date
NL6806442A true NL6806442A (xx) 1968-11-11

Family

ID=10158827

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6806442A NL6806442A (xx) 1967-05-08 1968-05-07

Country Status (5)

Country Link
US (1) US3758672A (xx)
DE (1) DE1769322A1 (xx)
FR (1) FR1563415A (xx)
GB (1) GB1242051A (xx)
NL (1) NL6806442A (xx)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE377108B (xx) * 1970-03-27 1975-06-23 Kanegafuchi Spinning Co Ltd
US3956193A (en) * 1971-12-16 1976-05-11 United Kingdom Atomic Energy Authority Conductivity of silicon nitride
US4860015A (en) * 1972-08-29 1989-08-22 The United States Of America As Represented By The Secretary Of The Air Force Delay line null command generator test set for sarcalm
JPS5850929B2 (ja) * 1978-03-10 1983-11-14 株式会社東芝 炭化ケイ素粉末の製造方法
US4249700A (en) * 1979-07-02 1981-02-10 Exxon Research & Engineering Co. Recovery of silicon carbide whiskers from coked, converted rice hulls by liquid-liquid separation
JPS5610921A (en) 1979-07-09 1981-02-03 Toshiba Ceramics Co Ltd Material for equipment for manufacturing semiconductor and its treating furnace
US4256571A (en) * 1979-10-09 1981-03-17 Silag, Inc. Recovery of silicon carbide whiskers from coked, converted rice hulls by selective flocculation-liquid extraction
DE3650539T2 (de) * 1985-04-04 1996-10-31 Nippon Steel Corp Verfahren zum Erzeugen von Siliciumkarbid-Teilchen und von einem Siliciumkarbid-Sinterkörper
CA1275088A (en) * 1985-12-30 1990-10-09 Peter D. Shalek Prealloyed catalyst for growing silicon carbide whiskers
US4789536A (en) * 1987-01-20 1988-12-06 J. M. Huber Corporation Process for producing silicon carbide whiskers
FR2716208B1 (fr) * 1994-02-17 1996-06-07 Aerospatiale Procédé de production de trichites ou wiskers fibreux, longs de carbure de silicium.
EP0744390B1 (en) * 1995-05-22 1999-04-07 Nippon Carbon Co., Ltd. Process for producing silicon carbide fibers
US5667587A (en) * 1996-12-18 1997-09-16 Northrop Gruman Corporation Apparatus for growing silicon carbide crystals

Also Published As

Publication number Publication date
GB1242051A (en) 1971-08-11
DE1769322A1 (de) 1971-09-16
US3758672A (en) 1973-09-11
FR1563415A (xx) 1969-04-11

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