NL6805300A - - Google Patents

Info

Publication number
NL6805300A
NL6805300A NL6805300A NL6805300A NL6805300A NL 6805300 A NL6805300 A NL 6805300A NL 6805300 A NL6805300 A NL 6805300A NL 6805300 A NL6805300 A NL 6805300A NL 6805300 A NL6805300 A NL 6805300A
Authority
NL
Netherlands
Application number
NL6805300A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6805300A priority Critical patent/NL6805300A/xx
Priority to DE1917136A priority patent/DE1917136C3/de
Priority to NO1475/69A priority patent/NO124059B/no
Priority to FR6911083A priority patent/FR2006185A1/fr
Priority to CH553769A priority patent/CH538300A/de
Priority to GB1229900D priority patent/GB1229900A/en
Priority to ES365930A priority patent/ES365930A1/es
Priority to BE731440D priority patent/BE731440A/xx
Priority to US815678A priority patent/US3632405A/en
Publication of NL6805300A publication Critical patent/NL6805300A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6805300A 1968-04-13 1968-04-13 NL6805300A (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL6805300A NL6805300A (fr) 1968-04-13 1968-04-13
DE1917136A DE1917136C3 (de) 1968-04-13 1969-04-02 Verfahren zur Herstellung von drahtförmigen Kristallen
NO1475/69A NO124059B (fr) 1968-04-13 1969-04-10
FR6911083A FR2006185A1 (fr) 1968-04-13 1969-04-10
CH553769A CH538300A (de) 1968-04-13 1969-04-10 Verfahren zur Herstellung von drahtförmigen Kristallen
GB1229900D GB1229900A (fr) 1968-04-13 1969-04-10
ES365930A ES365930A1 (es) 1968-04-13 1969-04-11 Un metodo de fabricar cristales, particularmente cristales filamentosos.
BE731440D BE731440A (fr) 1968-04-13 1969-04-11
US815678A US3632405A (en) 1968-04-13 1969-04-14 Crystals, in particular crystal whiskers and objects comprising such crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6805300A NL6805300A (fr) 1968-04-13 1968-04-13

Publications (1)

Publication Number Publication Date
NL6805300A true NL6805300A (fr) 1969-10-15

Family

ID=19803336

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6805300A NL6805300A (fr) 1968-04-13 1968-04-13

Country Status (9)

Country Link
US (1) US3632405A (fr)
BE (1) BE731440A (fr)
CH (1) CH538300A (fr)
DE (1) DE1917136C3 (fr)
ES (1) ES365930A1 (fr)
FR (1) FR2006185A1 (fr)
GB (1) GB1229900A (fr)
NL (1) NL6805300A (fr)
NO (1) NO124059B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5404836A (en) * 1989-02-03 1995-04-11 Milewski; John V. Method and apparatus for continuous controlled production of single crystal whiskers
JP2697474B2 (ja) * 1992-04-30 1998-01-14 松下電器産業株式会社 微細構造の製造方法
RU2099808C1 (ru) * 1996-04-01 1997-12-20 Евгений Инвиевич Гиваргизов Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты)
US6221154B1 (en) * 1999-02-18 2001-04-24 City University Of Hong Kong Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD)
WO2002080280A1 (fr) * 2001-03-30 2002-10-10 The Regents Of The University Of California Procede de realisation de nanostructures et de nanocables, et dispositifs etablis a partir de ce type d'equipement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3346414A (en) * 1964-01-28 1967-10-10 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique
US3493431A (en) * 1966-11-25 1970-02-03 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique

Also Published As

Publication number Publication date
GB1229900A (fr) 1971-04-28
DE1917136C3 (de) 1974-05-16
FR2006185A1 (fr) 1969-12-19
NO124059B (fr) 1972-02-28
DE1917136A1 (de) 1970-09-24
DE1917136B2 (fr) 1973-10-04
ES365930A1 (es) 1971-03-16
US3632405A (en) 1972-01-04
CH538300A (de) 1973-06-30
BE731440A (fr) 1969-10-13

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