NL6710041A - - Google Patents

Info

Publication number
NL6710041A
NL6710041A NL6710041A NL6710041A NL6710041A NL 6710041 A NL6710041 A NL 6710041A NL 6710041 A NL6710041 A NL 6710041A NL 6710041 A NL6710041 A NL 6710041A NL 6710041 A NL6710041 A NL 6710041A
Authority
NL
Netherlands
Application number
NL6710041A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6710041A publication Critical patent/NL6710041A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00Highly-doped buried regions of integrated devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/01Manufacture or treatment
    • H10D10/051Manufacture or treatment of vertical BJTs
    • H10D10/056Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00Highly-doped buried regions of integrated devices
    • H10W15/01Manufacture or treatment
NL6710041A 1966-07-25 1967-07-20 NL6710041A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB33426/66A GB1153497A (en) 1966-07-25 1966-07-25 Improvements in and relating to Semiconductor Devices

Publications (1)

Publication Number Publication Date
NL6710041A true NL6710041A (https=) 1968-01-26

Family

ID=10352810

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6710041A NL6710041A (https=) 1966-07-25 1967-07-20

Country Status (9)

Country Link
US (1) US3500143A (https=)
AT (1) AT278902B (https=)
BE (1) BE701770A (https=)
CH (1) CH469361A (https=)
DE (1) DE1614264B2 (https=)
ES (1) ES343343A1 (https=)
GB (1) GB1153497A (https=)
NL (1) NL6710041A (https=)
SE (1) SE317450B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3582725A (en) * 1969-08-21 1971-06-01 Nippon Electric Co Semiconductor integrated circuit device and the method of manufacturing the same
BE759583A (fr) * 1970-02-20 1971-04-30 Rca Corp Transistor de puissance pour micro-ondes
US3614553A (en) * 1970-09-17 1971-10-19 Rca Corp Power transistors having controlled emitter impurity concentrations
DE2215462C2 (de) * 1971-04-28 1983-03-31 Motorola, Inc., 60196 Schaumburg, Ill. Transistor
US3736478A (en) * 1971-09-01 1973-05-29 Rca Corp Radio frequency transistor employing high and low-conductivity base grids
US3896475A (en) * 1972-01-28 1975-07-22 Philips Corp Semiconductor device comprising resistance region having portions lateral to conductors
US3988759A (en) * 1974-08-26 1976-10-26 Rca Corporation Thermally balanced PN junction
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
JPS5565460A (en) * 1978-11-09 1980-05-16 Ibm Method of manufacturing semiconductor device improved in current gain
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
US5492844A (en) * 1993-01-29 1996-02-20 Sgs-Thomson Microelectronics, Inc. Method of manufacturing increased conductivity base contact/feeders with self-aligned structures
US6262472B1 (en) 1999-05-17 2001-07-17 National Semiconductor Corporation Bipolar transistor compatible with CMOS utilizing tilted ion implanted base
US6043130A (en) * 1999-05-17 2000-03-28 National Semiconductor Corporation Process for forming bipolar transistor compatible with CMOS utilizing tilted ion implanted base
JP6341362B2 (ja) * 2013-12-24 2018-06-13 セイコーエプソン株式会社 発熱体、振動デバイス、電子機器及び移動体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1018673A (en) * 1963-01-28 1966-01-26 Rca Corp Semiconductor devices
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
GB1074287A (en) * 1963-12-13 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor
US3389023A (en) * 1966-01-14 1968-06-18 Ibm Methods of making a narrow emitter transistor by masking and diffusion

Also Published As

Publication number Publication date
AT278902B (de) 1970-02-25
GB1153497A (en) 1969-05-29
DE1614264A1 (de) 1970-05-27
US3500143A (en) 1970-03-10
ES343343A1 (es) 1968-09-01
CH469361A (de) 1969-02-28
BE701770A (https=) 1968-01-24
SE317450B (https=) 1969-11-17
DE1614264B2 (de) 1976-07-22

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