NL6707956A - - Google Patents

Info

Publication number
NL6707956A
NL6707956A NL6707956A NL6707956A NL6707956A NL 6707956 A NL6707956 A NL 6707956A NL 6707956 A NL6707956 A NL 6707956A NL 6707956 A NL6707956 A NL 6707956A NL 6707956 A NL6707956 A NL 6707956A
Authority
NL
Netherlands
Application number
NL6707956A
Other versions
NL152707B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL676707956A priority Critical patent/NL152707B/xx
Priority to US727563A priority patent/US3544858A/en
Priority to DE1764401A priority patent/DE1764401C3/de
Priority to DE19681789175 priority patent/DE1789175A1/de
Priority to GB58941/70A priority patent/GB1235178A/en
Priority to CH827368A priority patent/CH508988A/de
Priority to SE07533/68A priority patent/SE330212B/xx
Priority to AT536568A priority patent/AT315916B/de
Priority to GB58942/70A priority patent/GB1235179A/en
Priority to GB26718/68A priority patent/GB1235177A/en
Priority to DK265168AA priority patent/DK121771B/da
Priority to ES354734A priority patent/ES354734A1/es
Priority to NO2216/68A priority patent/NO121852B/no
Priority to BE716208D priority patent/BE716208A/xx
Priority to FR1571569D priority patent/FR1571569A/fr
Publication of NL6707956A publication Critical patent/NL6707956A/xx
Priority to US19849A priority patent/US3676921A/en
Priority to JP47078068A priority patent/JPS4816035B1/ja
Priority to JP49038970A priority patent/JPS5812748B1/ja
Publication of NL152707B publication Critical patent/NL152707B/xx
Priority to US05/908,846 priority patent/USRE30251E/en
Priority to US06/191,031 priority patent/USRE31580E/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0128—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising multiple local oxidation process steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/103—Mask, dual function, e.g. diffusion and oxidation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate
NL676707956A 1967-06-08 1967-06-08 Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan. NL152707B (nl)

Priority Applications (20)

Application Number Priority Date Filing Date Title
NL676707956A NL152707B (nl) 1967-06-08 1967-06-08 Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.
US727563A US3544858A (en) 1967-06-08 1968-05-08 Insulated gate field-effect transistor comprising a mesa channel and a thicker surrounding oxide
DE1764401A DE1764401C3 (de) 1967-06-08 1968-05-30 Feldeffekttransistor mit isolierter Steuerelektrode und Verfahren zu seiner Herstellung
DE19681789175 DE1789175A1 (de) 1967-06-08 1968-05-30 Verfahren zum herstellen eines feldeffekttransistors mit isolierter steuerelektrode
GB26718/68A GB1235177A (en) 1967-06-08 1968-06-05 Improvements in and relating to semiconductor devices
CH827368A CH508988A (de) 1967-06-08 1968-06-05 Feldeffekttransistor mit isolierter Torelektrode und Verfahren zu seiner Herstellung
SE07533/68A SE330212B (enExample) 1967-06-08 1968-06-05
AT536568A AT315916B (de) 1967-06-08 1968-06-05 Halbleiterbauelement und Verfahren zu seiner Herstellung
GB58942/70A GB1235179A (en) 1967-06-08 1968-06-05 Methods of manufacturing semiconductor devices
GB58941/70A GB1235178A (en) 1967-06-08 1968-06-05 Methods of manufacturing semiconductor devices
BE716208D BE716208A (enExample) 1967-06-08 1968-06-06
ES354734A ES354734A1 (es) 1967-06-08 1968-06-06 Un metodo de fabricacion de un dispositivo semiconductor.
NO2216/68A NO121852B (enExample) 1967-06-08 1968-06-06
DK265168AA DK121771B (da) 1967-06-08 1968-06-06 Halvlederkomponent med en felteffekttransistor med isoleret styreelektrode samt fremgangsmåde til fremstilling af komponenten.
FR1571569D FR1571569A (enExample) 1967-06-08 1968-06-10
US19849A US3676921A (en) 1967-06-08 1970-03-16 Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
JP47078068A JPS4816035B1 (enExample) 1967-06-08 1972-08-05
JP49038970A JPS5812748B1 (enExample) 1967-06-08 1974-04-08
US05/908,846 USRE30251E (en) 1967-06-08 1978-05-23 Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
US06/191,031 USRE31580E (en) 1967-06-08 1980-09-25 Insulated gate field-effect transistor comprising a mesa channel and a thicker surrounding oxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL676707956A NL152707B (nl) 1967-06-08 1967-06-08 Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.

Publications (2)

Publication Number Publication Date
NL6707956A true NL6707956A (enExample) 1968-12-09
NL152707B NL152707B (nl) 1977-03-15

Family

ID=19800359

Family Applications (1)

Application Number Title Priority Date Filing Date
NL676707956A NL152707B (nl) 1967-06-08 1967-06-08 Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.

Country Status (13)

Country Link
US (1) US3544858A (enExample)
JP (2) JPS4816035B1 (enExample)
AT (1) AT315916B (enExample)
BE (1) BE716208A (enExample)
CH (1) CH508988A (enExample)
DE (1) DE1764401C3 (enExample)
DK (1) DK121771B (enExample)
ES (1) ES354734A1 (enExample)
FR (1) FR1571569A (enExample)
GB (1) GB1235177A (enExample)
NL (1) NL152707B (enExample)
NO (1) NO121852B (enExample)
SE (1) SE330212B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS518316B1 (enExample) * 1969-10-22 1976-03-16
US3698966A (en) * 1970-02-26 1972-10-17 North American Rockwell Processes using a masking layer for producing field effect devices having oxide isolation
DE2128470A1 (de) * 1970-06-15 1972-01-20 Hitachi Ltd Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
NL169121C (nl) * 1970-07-10 1982-06-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam, dat aan een oppervlak is voorzien van een althans ten dele in het halfgeleiderlichaam verzonken, door thermische oxydatie gevormd oxydepatroon.
NL7017066A (enExample) * 1970-11-21 1972-05-24
NL170901C (nl) * 1971-04-03 1983-01-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
FR2134290B1 (enExample) * 1971-04-30 1977-03-18 Texas Instruments France
US3751722A (en) * 1971-04-30 1973-08-07 Standard Microsyst Smc Mos integrated circuit with substrate containing selectively formed resistivity regions
NL176406C (nl) * 1971-10-27 1985-04-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.
NL161305C (nl) * 1971-11-20 1980-01-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderin- richting.
JPS5538823B2 (enExample) * 1971-12-22 1980-10-07
US3853633A (en) * 1972-12-04 1974-12-10 Motorola Inc Method of making a semi planar insulated gate field-effect transistor device with implanted field
GB1437112A (en) 1973-09-07 1976-05-26 Mullard Ltd Semiconductor device manufacture
JPS5232680A (en) * 1975-09-08 1977-03-12 Toko Inc Manufacturing process of insulation gate-type field-effect semiconduct or device
JPS6041470B2 (ja) * 1976-06-15 1985-09-17 松下電器産業株式会社 半導体装置の製造方法
US4271421A (en) * 1977-01-26 1981-06-02 Texas Instruments Incorporated High density N-channel silicon gate read only memory
US4830975A (en) * 1983-01-13 1989-05-16 National Semiconductor Corporation Method of manufacture a primos device
DE3318213A1 (de) * 1983-05-19 1984-11-22 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum herstellen eines integrierten isolierschicht-feldeffekttransistors mit zur gateelektrode selbstausgerichteten kontakten
US4862232A (en) * 1986-09-22 1989-08-29 General Motors Corporation Transistor structure for high temperature logic circuits with insulation around source and drain regions
US4714685A (en) * 1986-12-08 1987-12-22 General Motors Corporation Method of fabricating self-aligned silicon-on-insulator like devices
US4797718A (en) * 1986-12-08 1989-01-10 Delco Electronics Corporation Self-aligned silicon MOS device
US4749441A (en) * 1986-12-11 1988-06-07 General Motors Corporation Semiconductor mushroom structure fabrication
US4760036A (en) * 1987-06-15 1988-07-26 Delco Electronics Corporation Process for growing silicon-on-insulator wafers using lateral epitaxial growth with seed window oxidation
US7981759B2 (en) * 2007-07-11 2011-07-19 Paratek Microwave, Inc. Local oxidation of silicon planarization for polysilicon layers under thin film structures
JP5213429B2 (ja) * 2007-12-13 2013-06-19 キヤノン株式会社 電界効果型トランジスタ
USD872962S1 (en) 2017-05-25 2020-01-14 Unarco Industries Llc Cart

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR14565E (fr) * 1911-06-19 1912-01-11 Robert Morane Dispositif pour le lancement des aéroplaness
NL299911A (enExample) * 1951-08-02
NL261446A (enExample) * 1960-03-25
NL297602A (enExample) * 1962-09-07
FR1392748A (fr) * 1963-03-07 1965-03-19 Rca Corp Montages de commutation à transistors
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3344322A (en) * 1965-01-22 1967-09-26 Hughes Aircraft Co Metal-oxide-semiconductor field effect transistor

Also Published As

Publication number Publication date
DK121771B (da) 1971-11-29
SE330212B (enExample) 1970-11-09
NL152707B (nl) 1977-03-15
DE1764401A1 (de) 1971-05-13
BE716208A (enExample) 1968-12-06
GB1235177A (en) 1971-06-09
JPS4816035B1 (enExample) 1973-05-18
CH508988A (de) 1971-06-15
DE1764401C3 (de) 1982-07-08
US3544858A (en) 1970-12-01
DE1764401B2 (de) 1975-06-19
NO121852B (enExample) 1971-04-19
FR1571569A (enExample) 1969-06-20
AT315916B (de) 1974-06-25
JPS5812748B1 (enExample) 1983-03-10
ES354734A1 (es) 1971-02-16

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Legal Events

Date Code Title Description
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: PHILIPS

V4 Discontinued because of reaching the maximum lifetime of a patent