NL6703014A - - Google Patents
Info
- Publication number
- NL6703014A NL6703014A NL6703014A NL6703014A NL6703014A NL 6703014 A NL6703014 A NL 6703014A NL 6703014 A NL6703014 A NL 6703014A NL 6703014 A NL6703014 A NL 6703014A NL 6703014 A NL6703014 A NL 6703014A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/924—To facilitate selective etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/928—Front and rear surface processing
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (15)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL676703013A NL153947B (nl) | 1967-02-25 | 1967-02-25 | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze. |
| NL6703014A NL6703014A (es) | 1967-02-25 | 1967-02-25 | |
| US707031A US3536600A (en) | 1967-02-25 | 1968-02-21 | Method of manufacturing semiconductor devices using an electrolytic etching process and semiconductor device manufactured by this method |
| GB1226153D GB1226153A (es) | 1967-02-25 | 1968-02-22 | |
| SE2316/68A SE345552B (es) | 1967-02-25 | 1968-02-22 | |
| CH257668A CH517380A (de) | 1967-02-25 | 1968-02-22 | Verfahren zur Herstellung einer Halbleitervorrichtung, bei dem ein elektrolytischer Ätzvorgang angewendet wird, und nach diesem Verfahren hergestellte Halbleitervorrichtung |
| GB8639/68A GB1225061A (en) | 1967-02-25 | 1968-02-22 | Manufacturing semiconductor devices |
| CH257568A CH513514A (de) | 1967-02-25 | 1968-02-22 | Verfahren zur Herstellung einer Halbleitervorrichtung |
| BE711250D BE711250A (es) | 1967-02-25 | 1968-02-23 | |
| DE1696092A DE1696092C2 (de) | 1967-02-25 | 1968-02-23 | Verfahren zum Herstellen von Halbleiterbauelementen |
| DE19681696084 DE1696084C (de) | 1967-02-25 | 1968-02-23 | Verfahren zur Herstellung von Halbleitervorrichtungen mit Hilfe selektiver elektrolytischer Ätzung |
| AT173068A AT300038B (de) | 1967-02-25 | 1968-02-23 | Verfahren zur Herstellung von Halbleitervorrichtungen unter Anwendung eines selektiven elektrolytischen Ätzverfahrens |
| FR1562282D FR1562282A (es) | 1967-02-25 | 1968-02-26 | |
| FR1556569D FR1556569A (es) | 1967-02-25 | 1968-02-26 | |
| US708306A US3616345A (en) | 1967-02-25 | 1968-02-26 | Method of manufacturing semiconductor devices in which a selective electrolytic etching process is used |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6703014A NL6703014A (es) | 1967-02-25 | 1967-02-25 | |
| NL676703013A NL153947B (nl) | 1967-02-25 | 1967-02-25 | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6703014A true NL6703014A (es) | 1968-08-26 |
Family
ID=26644158
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL676703013A NL153947B (nl) | 1967-02-25 | 1967-02-25 | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze. |
| NL6703014A NL6703014A (es) | 1967-02-25 | 1967-02-25 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL676703013A NL153947B (nl) | 1967-02-25 | 1967-02-25 | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze. |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US3536600A (es) |
| AT (1) | AT300038B (es) |
| BE (1) | BE711250A (es) |
| CH (2) | CH513514A (es) |
| DE (1) | DE1696092C2 (es) |
| FR (2) | FR1556569A (es) |
| GB (2) | GB1225061A (es) |
| NL (2) | NL153947B (es) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3713922A (en) * | 1970-12-28 | 1973-01-30 | Bell Telephone Labor Inc | High resolution shadow masks and their preparation |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL162254B (nl) * | 1968-11-29 | 1979-11-15 | Philips Nv | Halfgeleiderinrichting voor het omzetten van mechanische spanningen in elektrische signalen en werkwijze voor het vervaardigen daarvan. |
| NL6910274A (es) * | 1969-07-04 | 1971-01-06 | ||
| US4131524A (en) * | 1969-11-24 | 1978-12-26 | U.S. Philips Corporation | Manufacture of semiconductor devices |
| DE2013546A1 (de) * | 1970-03-20 | 1971-09-30 | Siemens Ag | Verfahren zur Herstellung isolierter Halbleiterbereiche |
| US3655540A (en) * | 1970-06-22 | 1972-04-11 | Bell Telephone Labor Inc | Method of making semiconductor device components |
| US3642593A (en) * | 1970-07-31 | 1972-02-15 | Bell Telephone Labor Inc | Method of preparing slices of a semiconductor material having discrete doped regions |
| US3661741A (en) * | 1970-10-07 | 1972-05-09 | Bell Telephone Labor Inc | Fabrication of integrated semiconductor devices by electrochemical etching |
| JPS4936792B1 (es) * | 1970-10-15 | 1974-10-03 | ||
| US3902979A (en) * | 1974-06-24 | 1975-09-02 | Westinghouse Electric Corp | Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication |
| US4070230A (en) * | 1974-07-04 | 1978-01-24 | Siemens Aktiengesellschaft | Semiconductor component with dielectric carrier and its manufacture |
| GB1485015A (en) * | 1974-10-29 | 1977-09-08 | Mullard Ltd | Semi-conductor device manufacture |
| US3997381A (en) * | 1975-01-10 | 1976-12-14 | Intel Corporation | Method of manufacture of an epitaxial semiconductor layer on an insulating substrate |
| US3936329A (en) * | 1975-02-03 | 1976-02-03 | Texas Instruments Incorporated | Integral honeycomb-like support of very thin single crystal slices |
| US4115223A (en) * | 1975-12-15 | 1978-09-19 | International Standard Electric Corporation | Gallium arsenide photocathodes |
| US4180439A (en) * | 1976-03-15 | 1979-12-25 | International Business Machines Corporation | Anodic etching method for the detection of electrically active defects in silicon |
| GB1552268A (en) * | 1977-04-01 | 1979-09-12 | Standard Telephones Cables Ltd | Semiconductor etching |
| JPS6047725B2 (ja) * | 1977-06-14 | 1985-10-23 | ソニー株式会社 | フエライトの加工法 |
| DE2917654A1 (de) * | 1979-05-02 | 1980-11-13 | Ibm Deutschland | Anordnung und verfahren zum selektiven, elektrochemischen aetzen |
| IT1212404B (it) * | 1979-02-22 | 1989-11-22 | Rca Corp | Metodo comportante un singolo attacco per la formazione di un mesa presentante una parete a piu'gradini. |
| EP0018556B1 (de) * | 1979-05-02 | 1984-08-08 | International Business Machines Corporation | Anordnung und Verfahren zum selektiven, elektrochemischen Ätzen |
| US5362682A (en) * | 1980-04-10 | 1994-11-08 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
| US4554059A (en) * | 1983-11-04 | 1985-11-19 | Harris Corporation | Electrochemical dielectric isolation technique |
| EP0142737B1 (en) * | 1983-11-04 | 1993-10-06 | Harris Corporation | Electrochemical dielectric isolation technique |
| FR2675824B1 (fr) * | 1991-04-26 | 1994-02-04 | Alice Izrael | Procede de traitement de la surface gravee d'un corps semi conducteur ou semi-isolant, circuits integres obtenus selon un tel procede et appareil d'oxydation anodique pour mettre en óoeuvre un tel procede. |
| EP0563625A3 (en) * | 1992-04-03 | 1994-05-25 | Ibm | Immersion scanning system for fabricating porous silicon films and devices |
| KR100380701B1 (ko) * | 1994-07-26 | 2003-07-22 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 표면장착용반도체장치제조방법및표면장착용반도체장치 |
| US6027958A (en) * | 1996-07-11 | 2000-02-22 | Kopin Corporation | Transferred flexible integrated circuit |
| US6737360B2 (en) * | 1999-12-30 | 2004-05-18 | Intel Corporation | Controlled potential anodic etching process for the selective removal of conductive thin films |
| US6709953B2 (en) * | 2002-01-31 | 2004-03-23 | Infineon Technologies Ag | Method of applying a bottom surface protective coating to a wafer, and wafer dicing method |
| DE10235020B4 (de) * | 2002-07-31 | 2004-08-26 | Christian-Albrechts-Universität Zu Kiel | Vorrichtung und Verfahren zum Ätzen großflächiger Halbleiterscheiben |
| CN102061474B (zh) * | 2010-10-01 | 2012-06-27 | 绍兴旭昌科技企业有限公司 | 一种半导体晶圆的超厚度化学减薄方法 |
| CN112442728B (zh) * | 2020-12-02 | 2024-05-24 | 无锡市鹏振智能科技有限公司 | 一种旋转式电解抛光设备 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2939825A (en) * | 1956-04-09 | 1960-06-07 | Cleveland Twist Drill Co | Sharpening, shaping and finishing of electrically conductive materials |
| FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ | |
| US3096262A (en) * | 1958-10-23 | 1963-07-02 | Shockley William | Method of making thin slices of semiconductive material |
| USB161573I5 (es) * | 1961-12-22 | |||
| DE1213056B (de) * | 1962-08-16 | 1966-03-24 | Siemens Ag | Elektrolytisches AEtzverfahren zum Verkleinern von pn-UEbergangsflaechen und/oder zum Beseitigen von Oberflaechenstoerungen an pn-UEbergaengen bei Halbleiterkoerpern von Halbleiterbauelementen |
| US3254280A (en) * | 1963-05-29 | 1966-05-31 | Westinghouse Electric Corp | Silicon carbide unipolar transistor |
| US3265599A (en) * | 1963-06-25 | 1966-08-09 | Litton Systems Inc | Formation of grain boundary photoorienter by electrolytic etching |
-
1967
- 1967-02-25 NL NL676703013A patent/NL153947B/xx not_active IP Right Cessation
- 1967-02-25 NL NL6703014A patent/NL6703014A/xx unknown
-
1968
- 1968-02-21 US US707031A patent/US3536600A/en not_active Expired - Lifetime
- 1968-02-22 GB GB8639/68A patent/GB1225061A/en not_active Expired
- 1968-02-22 CH CH257568A patent/CH513514A/de not_active IP Right Cessation
- 1968-02-22 GB GB1226153D patent/GB1226153A/en not_active Expired
- 1968-02-22 CH CH257668A patent/CH517380A/de not_active IP Right Cessation
- 1968-02-23 BE BE711250D patent/BE711250A/xx unknown
- 1968-02-23 AT AT173068A patent/AT300038B/de not_active IP Right Cessation
- 1968-02-23 DE DE1696092A patent/DE1696092C2/de not_active Expired
- 1968-02-26 FR FR1556569D patent/FR1556569A/fr not_active Expired
- 1968-02-26 US US708306A patent/US3616345A/en not_active Expired - Lifetime
- 1968-02-26 FR FR1562282D patent/FR1562282A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3713922A (en) * | 1970-12-28 | 1973-01-30 | Bell Telephone Labor Inc | High resolution shadow masks and their preparation |
Also Published As
| Publication number | Publication date |
|---|---|
| AT300038B (de) | 1972-07-10 |
| GB1226153A (es) | 1971-03-24 |
| DE1696092C2 (de) | 1984-04-26 |
| DE1696084A1 (de) | 1972-03-09 |
| US3536600A (en) | 1970-10-27 |
| NL6703013A (es) | 1968-08-26 |
| BE711250A (es) | 1968-08-23 |
| FR1556569A (es) | 1969-02-07 |
| FR1562282A (es) | 1969-04-04 |
| NL153947B (nl) | 1977-07-15 |
| DE1696092A1 (de) | 1971-12-23 |
| DE1696084B2 (de) | 1972-12-28 |
| GB1225061A (en) | 1971-03-17 |
| CH517380A (de) | 1971-12-31 |
| CH513514A (de) | 1971-09-30 |
| US3616345A (en) | 1971-10-26 |