NL6700080A - - Google Patents

Info

Publication number
NL6700080A
NL6700080A NL6700080A NL6700080A NL6700080A NL 6700080 A NL6700080 A NL 6700080A NL 6700080 A NL6700080 A NL 6700080A NL 6700080 A NL6700080 A NL 6700080A NL 6700080 A NL6700080 A NL 6700080A
Authority
NL
Netherlands
Application number
NL6700080A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DE6609429U priority Critical patent/DE6609429U/de
Publication of NL6700080A publication Critical patent/NL6700080A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6700080A 1964-05-23 1964-05-23 NL6700080A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE6609429U DE6609429U (de) 1964-05-23 1964-08-17 Gelenkzangen für eine kombinierte Fersen-Form- und Klebezwickmaschine

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52124066A 1966-01-03 1966-01-03
US60224266A 1966-12-16 1966-12-16

Publications (1)

Publication Number Publication Date
NL6700080A true NL6700080A (zh) 1967-07-04

Family

ID=27060418

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6700080A NL6700080A (zh) 1964-05-23 1964-05-23

Country Status (5)

Country Link
US (2) US3441000A (zh)
BE (1) BE692148A (zh)
DE (1) DE1544230A1 (zh)
FR (1) FR1509254A (zh)
NL (1) NL6700080A (zh)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617381A (en) * 1968-07-30 1971-11-02 Rca Corp Method of epitaxially growing single crystal films of metal oxides
US3637434A (en) * 1968-11-07 1972-01-25 Nippon Electric Co Vapor deposition apparatus
US3554162A (en) * 1969-01-22 1971-01-12 Motorola Inc Diffusion tube
US3675619A (en) * 1969-02-25 1972-07-11 Monsanto Co Apparatus for production of epitaxial films
US3602192A (en) * 1969-05-19 1971-08-31 Ibm Semiconductor wafer processing
US4020791A (en) * 1969-06-30 1977-05-03 Siemens Aktiengesellschaft Apparatus for indiffusing dopants into semiconductor material
US3603284A (en) * 1970-01-02 1971-09-07 Ibm Vapor deposition apparatus
US4007074A (en) * 1970-01-09 1977-02-08 Hitachi, Ltd. Method of making an epitaxial growth layer of GaAs1-x Px compound semiconductor
US3648653A (en) * 1970-06-01 1972-03-14 Bell Telephone Labor Inc Liquid phase crystal growth apparatus
US3805735A (en) * 1970-07-27 1974-04-23 Siemens Ag Device for indiffusing dopants into semiconductor wafers
JPS4942351B1 (zh) * 1970-08-12 1974-11-14
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate
DE2131722A1 (de) * 1971-06-25 1972-12-28 Siemens Ag Anordnung zum Eindiffundieren von Dotierstoffen
US3830194A (en) * 1972-09-28 1974-08-20 Applied Materials Tech Susceptor support structure and docking assembly
US3925119A (en) * 1973-05-07 1975-12-09 Ibm Method for vapor deposition of gallium arsenide phosphide upon gallium arsenide substrates
US3888705A (en) * 1973-12-19 1975-06-10 Nasa Vapor phase growth of groups iii-v compounds by hydrogen chloride transport of the elements
US4155784A (en) * 1977-04-08 1979-05-22 Trw Inc. Process for epitaxially growing a gallium arsenide layer having reduced silicon contaminants on a gallium arsenide substrate
DE2928206C2 (de) * 1978-07-31 1983-03-24 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Vertikale Dampfphasen-Aufwachsvorrichtung
US4190470A (en) * 1978-11-06 1980-02-26 M/A Com, Inc. Production of epitaxial layers by vapor deposition utilizing dynamically adjusted flow rates and gas phase concentrations
JPS5942970B2 (ja) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 半導体熱処理用反応管
JPS5944771B2 (ja) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 半導体熱処理炉
US4247781A (en) * 1979-06-29 1981-01-27 International Business Machines Corporation Cooled target disc for high current ion implantation method and apparatus
US4332838A (en) * 1980-09-24 1982-06-01 Wegrzyn James E Particulate thin film fabrication process
JPS6055478B2 (ja) * 1982-10-19 1985-12-05 松下電器産業株式会社 気相成長方法
US4488914A (en) * 1982-10-29 1984-12-18 The United States Of America As Represented By The Secretary Of The Air Force Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch
JPS5982731A (ja) * 1982-11-04 1984-05-12 Toshiba Corp ウエハ水蒸気酸化装置
US4493287A (en) * 1982-12-03 1985-01-15 Northern Telecom Limited Diffusion equipment
DE3305934A1 (de) * 1983-02-21 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur temperaturbehandlung von substraten, insbesondere von halbleiterkristallscheiben
FR2548688B1 (fr) * 1983-07-08 1985-10-25 Radiotechnique Compelec Porte-substrat tournant pour reacteur d'epitaxie
US4539933A (en) * 1983-08-31 1985-09-10 Anicon, Inc. Chemical vapor deposition apparatus
US4504329A (en) * 1983-10-06 1985-03-12 The United States Of America As Represented By The Secretary Of The Air Force Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source
US4592307A (en) * 1985-02-28 1986-06-03 Rca Corporation Vapor phase deposition apparatus
US4801557A (en) * 1987-06-23 1989-01-31 Northwestern University Vapor-phase epitaxy of indium phosphide and other compounds using flow-rate modulation
DE3810832A1 (de) * 1988-03-30 1989-10-19 Heraeus Schott Quarzschmelze Behandlungsvorrichtung aus quarzglas
DE3907610A1 (de) * 1989-03-09 1990-09-13 Telefunken Electronic Gmbh Epitaxieverfahren
US5169453A (en) * 1989-03-20 1992-12-08 Toyoko Kagaku Co., Ltd. Wafer supporting jig and a decompressed gas phase growth method using such a jig
EP1120813B1 (en) * 2000-01-24 2006-05-03 Infineon Technologies SC300 GmbH & Co. KG Reactor for manufacturing of a semiconductor device
SG155057A1 (en) * 2003-02-27 2009-09-30 Asahi Glass Co Ltd Outer tube made of silicon carbide and thermal treatment system for semiconductors
TW201209219A (en) * 2010-08-16 2012-03-01 Hon Hai Prec Ind Co Ltd Coating apparatus and coating method
US20160090665A1 (en) * 2014-09-25 2016-03-31 Panasonic Intellectual Property Management Co., Ltd. Apparatus for producing group iii nitride crystal, and method for producing the same
CN111996536B (zh) * 2020-09-21 2024-11-01 福建兵工装备有限公司 枪管内膛液体处理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2831784A (en) * 1958-04-22 Gastinger
US2893850A (en) * 1956-08-03 1959-07-07 Bichowsky Foord Von Apparatus for the production of elemental silicon
NL124690C (zh) * 1958-05-29
US3009834A (en) * 1959-10-29 1961-11-21 Jacques M Hanlet Process of forming an electroluminescent article and the resulting article
US3121062A (en) * 1961-06-22 1964-02-11 Herbert J Gonld Vapor phase crystallization
US3233578A (en) * 1962-04-23 1966-02-08 Capita Emil Robert Apparatus for vapor plating
US3301213A (en) * 1962-10-23 1967-01-31 Ibm Epitaxial reactor apparatus
US3345209A (en) * 1964-04-02 1967-10-03 Ibm Growth control of disproportionation process
US3361591A (en) * 1964-04-15 1968-01-02 Hughes Aircraft Co Production of thin films of cadmium sulfide, cadmium telluride or cadmium selenide
DE1544253C3 (de) * 1964-09-14 1974-08-15 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum epitaktischen Abscheiden yon Halbleitermaterial
US3354004A (en) * 1964-11-17 1967-11-21 Ibm Method for enhancing efficiency of recovery of semi-conductor material in perturbable disproportionation systems
US3338761A (en) * 1965-03-31 1967-08-29 Texas Instruments Inc Method and apparatus for making compound materials
US3361600A (en) * 1965-08-09 1968-01-02 Ibm Method of doping epitaxially grown semiconductor material

Also Published As

Publication number Publication date
FR1509254A (fr) 1968-01-12
DE1544230A1 (de) 1970-03-19
BE692148A (zh) 1967-07-03
US3441000A (en) 1969-04-29
US3511723A (en) 1970-05-12

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