NL6611609A - - Google Patents

Info

Publication number
NL6611609A
NL6611609A NL6611609A NL6611609A NL6611609A NL 6611609 A NL6611609 A NL 6611609A NL 6611609 A NL6611609 A NL 6611609A NL 6611609 A NL6611609 A NL 6611609A NL 6611609 A NL6611609 A NL 6611609A
Authority
NL
Netherlands
Application number
NL6611609A
Other versions
NL151567B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6611609A publication Critical patent/NL6611609A/xx
Publication of NL151567B publication Critical patent/NL151567B/xx

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B7/00—Heating by electric discharge
    • H05B7/02—Details
    • H05B7/06—Electrodes
    • H05B7/08—Electrodes non-consumable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
NL666611609A 1965-08-19 1966-08-18 Halfgeleiderinrichting met negatieve weerstandskarakteristiek. NL151567B (nl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5114165 1965-08-19
JP5114265 1965-08-19
JP5289765 1965-08-27

Publications (2)

Publication Number Publication Date
NL6611609A true NL6611609A (de) 1967-02-20
NL151567B NL151567B (nl) 1976-11-15

Family

ID=27294221

Family Applications (1)

Application Number Title Priority Date Filing Date
NL666611609A NL151567B (nl) 1965-08-19 1966-08-18 Halfgeleiderinrichting met negatieve weerstandskarakteristiek.

Country Status (4)

Country Link
US (1) US3461356A (de)
DE (1) DE1564343B2 (de)
GB (1) GB1168255A (de)
NL (1) NL151567B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3537021A (en) * 1968-09-09 1970-10-27 Bell Telephone Labor Inc Stable frequency-independent two-valley semiconductor device
JPS4919957B1 (de) * 1970-04-24 1974-05-21
US3662232A (en) * 1970-12-10 1972-05-09 Fmc Corp Semiconductor devices having low minority carrier lifetime and process for producing same
CH539360A (de) * 1971-09-30 1973-07-15 Ibm Halbleiterschalt- oder Speichervorrichtung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2908871A (en) * 1954-10-26 1959-10-13 Bell Telephone Labor Inc Negative resistance semiconductive apparatus
US3008089A (en) * 1958-02-20 1961-11-07 Bell Telephone Labor Inc Semiconductive device comprising p-i-n conductivity layers
GB1058753A (en) * 1962-11-02 1967-02-15 Ass Elect Ind Improvements relating to solid state devices
CH440478A (de) * 1963-07-01 1967-07-31 Asea Ab Verfahren zum Herabsetzen der Durchlasspannung in einem gleichrichtenden Halbleiterkörper und Anordnung zur Ausführung des Verfahrens
US3270258A (en) * 1963-07-05 1966-08-30 Int Rectifier Corp Field effect transistor
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
US3374176A (en) * 1965-01-04 1968-03-19 Gen Electric Process for making n-type zinc cadmium sulfide electroluminescent material

Also Published As

Publication number Publication date
GB1168255A (en) 1969-10-22
DE1564343B2 (de) 1971-08-15
US3461356A (en) 1969-08-12
DE1564343A1 (de) 1969-07-24
NL151567B (nl) 1976-11-15

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