NL6610846A - - Google Patents

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Publication number
NL6610846A
NL6610846A NL6610846A NL6610846A NL6610846A NL 6610846 A NL6610846 A NL 6610846A NL 6610846 A NL6610846 A NL 6610846A NL 6610846 A NL6610846 A NL 6610846A NL 6610846 A NL6610846 A NL 6610846A
Authority
NL
Netherlands
Application number
NL6610846A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6610846A publication Critical patent/NL6610846A/xx

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
NL6610846A 1965-08-02 1966-08-02 NL6610846A (hu)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US476538A US3370995A (en) 1965-08-02 1965-08-02 Method for fabricating electrically isolated semiconductor devices in integrated circuits
US71980568A 1968-01-04 1968-01-04

Publications (1)

Publication Number Publication Date
NL6610846A true NL6610846A (hu) 1967-02-03

Family

ID=27045206

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6610846A NL6610846A (hu) 1965-08-02 1966-08-02

Country Status (3)

Country Link
US (2) US3370995A (hu)
GB (1) GB1147599A (hu)
NL (1) NL6610846A (hu)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
GB1028485A (en) * 1965-02-01 1966-05-04 Standard Telephones Cables Ltd Semiconductor devices
US3522118A (en) * 1965-08-17 1970-07-28 Motorola Inc Gas phase etching
US3425879A (en) * 1965-10-24 1969-02-04 Texas Instruments Inc Method of making shaped epitaxial deposits
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones
US3449643A (en) * 1966-09-09 1969-06-10 Hitachi Ltd Semiconductor integrated circuit device
US3474308A (en) * 1966-12-13 1969-10-21 Texas Instruments Inc Monolithic circuits having matched complementary transistors,sub-epitaxial and surface resistors,and n and p channel field effect transistors
US3534267A (en) * 1966-12-30 1970-10-13 Texas Instruments Inc Integrated 94 ghz. local oscillator and mixer
FR155459A (hu) * 1967-01-23
FR1527898A (fr) * 1967-03-16 1968-06-07 Radiotechnique Coprim Rtc Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
US3473090A (en) * 1967-06-30 1969-10-14 Texas Instruments Inc Integrated circuit having matched complementary transistors
US3465215A (en) * 1967-06-30 1969-09-02 Texas Instruments Inc Process for fabricating monolithic circuits having matched complementary transistors and product
US3593067A (en) * 1967-08-07 1971-07-13 Honeywell Inc Semiconductor radiation sensor
US3476991A (en) * 1967-11-08 1969-11-04 Texas Instruments Inc Inversion layer field effect device with azimuthally dependent carrier mobility
US3501336A (en) * 1967-12-11 1970-03-17 Texas Instruments Inc Method for etching single crystal silicon substrates and depositing silicon thereon
US3506891A (en) * 1967-12-26 1970-04-14 Philco Ford Corp Epitaxial planar transistor
US3460009A (en) * 1967-12-29 1969-08-05 Westinghouse Electric Corp Constant gain power transistor
US3502951A (en) * 1968-01-02 1970-03-24 Singer Co Monolithic complementary semiconductor device
US3653988A (en) * 1968-02-05 1972-04-04 Bell Telephone Labor Inc Method of forming monolithic semiconductor integrated circuit devices
US3538399A (en) * 1968-05-15 1970-11-03 Tektronix Inc Pn junction gated field effect transistor having buried layer of low resistivity
DE1764556C3 (de) * 1968-06-26 1979-01-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines Sperrschichtkondensatorelements und danach hergestellte Sperrschichtkondensatorelemente
US3514845A (en) * 1968-08-16 1970-06-02 Raytheon Co Method of making integrated circuits with complementary elements
US3547716A (en) * 1968-09-05 1970-12-15 Ibm Isolation in epitaxially grown monolithic devices
US3577045A (en) * 1968-09-18 1971-05-04 Gen Electric High emitter efficiency simiconductor device with low base resistance and by selective diffusion of base impurities
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
US3753803A (en) * 1968-12-06 1973-08-21 Hitachi Ltd Method of dividing semiconductor layer into a plurality of isolated regions
BE756190A (fr) * 1969-09-17 1971-02-15 Rca Corp Circuit integre a haute tension comportant un chenal d'inversion
US3919006A (en) * 1969-09-18 1975-11-11 Yasuo Tarui Method of manufacturing a lateral transistor
US3853644A (en) * 1969-09-18 1974-12-10 Kogyo Gijutsuin Transistor for super-high frequency and method of manufacturing it
US3593069A (en) * 1969-10-08 1971-07-13 Nat Semiconductor Corp Integrated circuit resistor and method of making the same
US3925120A (en) * 1969-10-27 1975-12-09 Hitachi Ltd A method for manufacturing a semiconductor device having a buried epitaxial layer
US3629016A (en) * 1970-03-05 1971-12-21 Us Army Method of making an insulated gate field effect device
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
JPS5410836B1 (hu) * 1970-06-26 1979-05-10
JPS509635B1 (hu) * 1970-09-07 1975-04-14
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US3677280A (en) * 1971-06-21 1972-07-18 Fairchild Camera Instr Co Optimum high gain-bandwidth phototransistor structure
US3891479A (en) * 1971-10-19 1975-06-24 Motorola Inc Method of making a high current Schottky barrier device
US3878551A (en) * 1971-11-30 1975-04-15 Texas Instruments Inc Semiconductor integrated circuits having improved electrical isolation characteristics
US3838440A (en) * 1972-10-06 1974-09-24 Fairchild Camera Instr Co A monolithic mos/bipolar integrated circuit structure
JPS5240017B2 (hu) * 1972-10-16 1977-10-08
FR2216678B1 (hu) * 1973-02-02 1977-08-19 Radiotechnique Compelec
US3992232A (en) * 1973-08-06 1976-11-16 Hitachi, Ltd. Method of manufacturing semiconductor device having oxide isolation structure and guard ring
JPS5183473A (en) * 1975-01-20 1976-07-22 Hitachi Ltd Fujunbutsuno doopinguhoho
US4141765A (en) * 1975-02-17 1979-02-27 Siemens Aktiengesellschaft Process for the production of extremely flat silicon troughs by selective etching with subsequent rate controlled epitaxial refill
US4251300A (en) * 1979-05-14 1981-02-17 Fairchild Camera And Instrument Corporation Method for forming shaped buried layers in semiconductor devices utilizing etching, epitaxial deposition and oxide formation
JPS55160443A (en) * 1979-05-22 1980-12-13 Semiconductor Res Found Manufacture of semiconductor integrated circuit device
JPH0783252B2 (ja) * 1982-07-12 1995-09-06 株式会社日立製作所 半導体集積回路装置
EP0156964A1 (en) * 1983-11-18 1985-10-09 Motorola, Inc. Means and method for improved junction isolation
US4636269A (en) * 1983-11-18 1987-01-13 Motorola Inc. Epitaxially isolated semiconductor device process utilizing etch and refill technique
US4609413A (en) * 1983-11-18 1986-09-02 Motorola, Inc. Method for manufacturing and epitaxially isolated semiconductor utilizing etch and refill technique
US4662061A (en) * 1985-02-27 1987-05-05 Texas Instruments Incorporated Method for fabricating a CMOS well structure
GB2183090B (en) * 1985-10-07 1989-09-13 Canon Kk Method for selective formation of deposited film
US4728624A (en) * 1985-10-31 1988-03-01 International Business Machines Corporation Selective epitaxial growth structure and isolation
US4830973A (en) * 1987-10-06 1989-05-16 Motorola, Inc. Merged complementary bipolar and MOS means and method
US5117274A (en) * 1987-10-06 1992-05-26 Motorola, Inc. Merged complementary bipolar and MOS means and method
JP2788269B2 (ja) * 1988-02-08 1998-08-20 株式会社東芝 半導体装置およびその製造方法
US5182219A (en) * 1989-07-21 1993-01-26 Linear Technology Corporation Push-back junction isolation semiconductor structure and method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2921362A (en) * 1955-06-27 1960-01-19 Honeywell Regulator Co Process for the production of semiconductor devices
BE549320A (hu) * 1955-09-02
US3083441A (en) * 1959-04-13 1963-04-02 Texas Instruments Inc Method for fabricating transistors
NL256300A (hu) * 1959-05-28 1900-01-01
US3193418A (en) * 1960-10-27 1965-07-06 Fairchild Camera Instr Co Semiconductor device fabrication
GB967002A (en) * 1961-05-05 1964-08-19 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
NL294124A (hu) * 1962-06-18
US3404321A (en) * 1963-01-29 1968-10-01 Nippon Electric Co Transistor body enclosing a submerged integrated resistor
US3275846A (en) * 1963-02-25 1966-09-27 Motorola Inc Integrated circuit bistable multivibrator
US3271685A (en) * 1963-06-20 1966-09-06 Westinghouse Electric Corp Multipurpose molecular electronic semiconductor device for performing amplifier and oscillator-mixer functions including degenerative feedback means
US3278347A (en) * 1963-11-26 1966-10-11 Int Rectifier Corp High voltage semiconductor device
US3320485A (en) * 1964-03-30 1967-05-16 Trw Inc Dielectric isolation for monolithic circuit
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
US3355669A (en) * 1964-09-14 1967-11-28 Rca Corp Fm detector system suitable for integration in a monolithic semiconductor body
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels

Also Published As

Publication number Publication date
GB1147599A (en) 1969-04-02
US3370995A (en) 1968-02-27
US3525025A (en) 1970-08-18

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