NL6609160A - - Google Patents

Info

Publication number
NL6609160A
NL6609160A NL6609160A NL6609160A NL6609160A NL 6609160 A NL6609160 A NL 6609160A NL 6609160 A NL6609160 A NL 6609160A NL 6609160 A NL6609160 A NL 6609160A NL 6609160 A NL6609160 A NL 6609160A
Authority
NL
Netherlands
Application number
NL6609160A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6609160A publication Critical patent/NL6609160A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
NL6609160A 1965-06-30 1966-06-30 NL6609160A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US468205A US3414434A (en) 1965-06-30 1965-06-30 Single crystal silicon on spinel insulators

Publications (1)

Publication Number Publication Date
NL6609160A true NL6609160A (xx) 1967-01-02

Family

ID=23858839

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6609160A NL6609160A (xx) 1965-06-30 1966-06-30

Country Status (3)

Country Link
US (1) US3414434A (xx)
GB (1) GB1119769A (xx)
NL (1) NL6609160A (xx)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3515957A (en) * 1967-05-19 1970-06-02 Nippon Electric Co Semiconductor device having low capacitance junction
FR1597033A (xx) * 1968-06-19 1970-06-22
DE1794273A1 (de) * 1968-09-30 1971-09-23 Siemens Ag Verfahren zum Herstellen epitaktischer Halbleiterschichten auf Fremdsubstraten
US3579012A (en) * 1968-10-16 1971-05-18 Philips Corp Imaging device with combined thin monocrystalline semiconductive target-window assembly
US3658586A (en) * 1969-04-11 1972-04-25 Rca Corp Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals
US3766447A (en) * 1971-10-20 1973-10-16 Harris Intertype Corp Heteroepitaxial structure
US3969753A (en) * 1972-06-30 1976-07-13 Rockwell International Corporation Silicon on sapphire oriented for maximum mobility
US4177321A (en) * 1972-07-25 1979-12-04 Semiconductor Research Foundation Single crystal of semiconductive material on crystal of insulating material
US4044372A (en) * 1974-08-05 1977-08-23 Sensor Technology, Inc. Photovoltaic cell having controllable spectral response
US4124860A (en) * 1975-02-27 1978-11-07 Optron, Inc. Optical coupler
US4180618A (en) * 1977-07-27 1979-12-25 Corning Glass Works Thin silicon film electronic device
JPS57169246A (en) * 1981-04-10 1982-10-18 Nec Corp Dielectric epitaxial film material
US4447497A (en) * 1982-05-03 1984-05-08 Rockwell International Corporation CVD Process for producing monocrystalline silicon-on-cubic zirconia and article produced thereby
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
US4590130A (en) * 1984-03-26 1986-05-20 General Electric Company Solid state zone recrystallization of semiconductor material on an insulator
US4753895A (en) * 1987-02-24 1988-06-28 Hughes Aircraft Company Method of forming low leakage CMOS device on insulating substrate
EP0399072B1 (de) * 1989-05-23 1992-12-09 BOCK & SCHUPP GMBH & CO. KG Schmuckstück
US5750000A (en) * 1990-08-03 1998-05-12 Canon Kabushiki Kaisha Semiconductor member, and process for preparing same and semiconductor device formed by use of same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL288035A (xx) * 1962-01-24
US3177100A (en) * 1963-09-09 1965-04-06 Rca Corp Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3

Also Published As

Publication number Publication date
GB1119769A (en) 1968-07-10
US3414434A (en) 1968-12-03

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