NL6606296A - - Google Patents

Info

Publication number
NL6606296A
NL6606296A NL6606296A NL6606296A NL6606296A NL 6606296 A NL6606296 A NL 6606296A NL 6606296 A NL6606296 A NL 6606296A NL 6606296 A NL6606296 A NL 6606296A NL 6606296 A NL6606296 A NL 6606296A
Authority
NL
Netherlands
Application number
NL6606296A
Other versions
NL149714B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6606296A publication Critical patent/NL6606296A/xx
Publication of NL149714B publication Critical patent/NL149714B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere
NL666606296A 1965-05-10 1966-05-09 Werkwijze voor het door diffusie tot stand brengen van een gebied met gewijzigde elektrische eigenschappen in een halfgeleiderplaatje en aldus verkregen halfgeleiderplaatjes. NL149714B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US454474A US3374125A (en) 1965-05-10 1965-05-10 Method of forming a pn junction by vaporization

Publications (2)

Publication Number Publication Date
NL6606296A true NL6606296A (de) 1966-11-11
NL149714B NL149714B (nl) 1976-06-15

Family

ID=23804745

Family Applications (1)

Application Number Title Priority Date Filing Date
NL666606296A NL149714B (nl) 1965-05-10 1966-05-09 Werkwijze voor het door diffusie tot stand brengen van een gebied met gewijzigde elektrische eigenschappen in een halfgeleiderplaatje en aldus verkregen halfgeleiderplaatjes.

Country Status (7)

Country Link
US (1) US3374125A (de)
BR (1) BR6679397D0 (de)
DE (1) DE1544245B2 (de)
ES (1) ES326459A1 (de)
GB (1) GB1136304A (de)
NL (1) NL149714B (de)
SE (1) SE334946B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852128A (en) * 1969-02-22 1974-12-03 Licentia Gmbh Method of diffusing impurities into semiconductor wafers
JPS49108969A (de) * 1973-02-07 1974-10-16
US4129090A (en) * 1973-02-28 1978-12-12 Hitachi, Ltd. Apparatus for diffusion into semiconductor wafers
JPS49114355A (de) * 1973-02-28 1974-10-31
JPS6011457B2 (ja) * 1973-04-02 1985-03-26 株式会社日立製作所 デイポジシヨン法
US3923563A (en) * 1973-04-16 1975-12-02 Owens Illinois Inc Process for doping silicon semiconductors using an impregnated refractory dopant source
US3907618A (en) * 1974-01-07 1975-09-23 Owens Illinois Inc Process for doping semiconductor employing glass-ceramic dopant
US3928096A (en) * 1974-01-07 1975-12-23 Owens Illinois Inc Boron doping of semiconductors
US4235650A (en) * 1978-09-05 1980-11-25 General Electric Company Open tube aluminum diffusion
US4239560A (en) * 1979-05-21 1980-12-16 General Electric Company Open tube aluminum oxide disc diffusion
US4553318A (en) * 1983-05-02 1985-11-19 Rca Corporation Method of making integrated PNP and NPN bipolar transistors and junction field effect transistor
US4592793A (en) * 1985-03-15 1986-06-03 International Business Machines Corporation Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates
CA1244969A (en) * 1986-10-29 1988-11-15 Mitel Corporation Method for diffusing p-type material using boron disks
CN112117349B (zh) * 2020-09-09 2022-05-24 湖州奥博石英科技有限公司 一种太阳能电池硅片扩散插片工艺

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material
US3244567A (en) * 1962-09-10 1966-04-05 Trw Semiconductors Inc Impurity diffusion method
US3279964A (en) * 1965-06-03 1966-10-18 Btu Eng Corp Method for continuous gas diffusion

Also Published As

Publication number Publication date
US3374125A (en) 1968-03-19
GB1136304A (en) 1968-12-11
NL149714B (nl) 1976-06-15
ES326459A1 (es) 1967-07-01
SE334946B (de) 1971-05-10
DE1544245A1 (de) 1969-01-30
DE1544245B2 (de) 1971-02-11
BR6679397D0 (pt) 1973-05-15

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: RCA