NL6603854A - - Google Patents
Info
- Publication number
- NL6603854A NL6603854A NL6603854A NL6603854A NL6603854A NL 6603854 A NL6603854 A NL 6603854A NL 6603854 A NL6603854 A NL 6603854A NL 6603854 A NL6603854 A NL 6603854A NL 6603854 A NL6603854 A NL 6603854A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2924—Structures
- H10P14/2925—Surface structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3408—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US443046A US3397448A (en) | 1965-03-26 | 1965-03-26 | Semiconductor integrated circuits and method of making same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6603854A true NL6603854A (https=) | 1966-09-27 |
Family
ID=23759211
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL131898D NL131898C (https=) | 1965-03-26 | ||
| NL6603854A NL6603854A (https=) | 1965-03-26 | 1966-03-24 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL131898D NL131898C (https=) | 1965-03-26 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3397448A (https=) |
| CH (1) | CH482303A (https=) |
| DE (1) | DE1539853A1 (https=) |
| GB (1) | GB1106197A (https=) |
| NL (2) | NL6603854A (https=) |
| SE (1) | SE303553B (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3451867A (en) * | 1966-05-31 | 1969-06-24 | Gen Electric | Processes of epitaxial deposition or diffusion employing a silicon carbide masking layer |
| US3508980A (en) * | 1967-07-26 | 1970-04-28 | Motorola Inc | Method of fabricating an integrated circuit structure with dielectric isolation |
| US3571919A (en) * | 1968-09-25 | 1971-03-23 | Texas Instruments Inc | Semiconductor device fabrication |
| US3838441A (en) * | 1968-12-04 | 1974-09-24 | Texas Instruments Inc | Semiconductor device isolation using silicon carbide |
| JPS5910073B2 (ja) * | 1972-10-27 | 1984-03-06 | 株式会社日立製作所 | シリコン・ゲ−トｍｏｓ型半導体装置の製造方法 |
| US4028149A (en) * | 1976-06-30 | 1977-06-07 | Ibm Corporation | Process for forming monocrystalline silicon carbide on silicon substrates |
| JPS5893250A (ja) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | 半導体装置 |
| JPS5978555A (ja) * | 1982-10-27 | 1984-05-07 | Toshiba Corp | 半導体装置 |
| US4524237A (en) * | 1984-02-08 | 1985-06-18 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Increased voltage photovoltaic cell |
| US5229625A (en) * | 1986-08-18 | 1993-07-20 | Sharp Kabushiki Kaisha | Schottky barrier gate type field effect transistor |
| SE9500146D0 (sv) * | 1995-01-18 | 1995-01-18 | Abb Research Ltd | Halvledarkomponent i kiselkarbid |
| US6498381B2 (en) * | 2001-02-22 | 2002-12-24 | Tru-Si Technologies, Inc. | Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2840494A (en) * | 1952-12-31 | 1958-06-24 | Henry W Parker | Manufacture of transistors |
| US2993814A (en) * | 1958-05-24 | 1961-07-25 | Foerderung Forschung Gmbh | Heating conductor and method of making the same |
| US3300832A (en) * | 1963-06-28 | 1967-01-31 | Rca Corp | Method of making composite insulatorsemiconductor wafer |
| US3290753A (en) * | 1963-08-19 | 1966-12-13 | Bell Telephone Labor Inc | Method of making semiconductor integrated circuit elements |
| US3312879A (en) * | 1964-07-29 | 1967-04-04 | North American Aviation Inc | Semiconductor structure including opposite conductivity segments |
-
0
- NL NL131898D patent/NL131898C/xx active
-
1965
- 1965-03-26 US US443046A patent/US3397448A/en not_active Expired - Lifetime
- 1965-12-01 GB GB50993/65A patent/GB1106197A/en not_active Expired
-
1966
- 1966-01-14 SE SE526/66A patent/SE303553B/xx unknown
- 1966-03-11 DE DE19661539853 patent/DE1539853A1/de active Pending
- 1966-03-24 CH CH423466A patent/CH482303A/de not_active IP Right Cessation
- 1966-03-24 NL NL6603854A patent/NL6603854A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1539853A1 (de) | 1969-07-24 |
| NL131898C (https=) | |
| CH482303A (de) | 1969-11-30 |
| SE303553B (https=) | 1968-09-02 |
| GB1106197A (en) | 1968-03-13 |
| US3397448A (en) | 1968-08-20 |