NL6603355A - - Google Patents
Info
- Publication number
- NL6603355A NL6603355A NL6603355A NL6603355A NL6603355A NL 6603355 A NL6603355 A NL 6603355A NL 6603355 A NL6603355 A NL 6603355A NL 6603355 A NL6603355 A NL 6603355A NL 6603355 A NL6603355 A NL 6603355A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/12—Regulating voltage or current wherein the variable actually regulated by the final control device is ac
- G05F1/32—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using magnetic devices having a controllable degree of saturation as final control devices
- G05F1/34—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using magnetic devices having a controllable degree of saturation as final control devices combined with discharge tubes or semiconductor devices
- G05F1/38—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using magnetic devices having a controllable degree of saturation as final control devices combined with discharge tubes or semiconductor devices semiconductor devices only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/158—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Optics & Photonics (AREA)
- Formation Of Insulating Films (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US446470A US3287243A (en) | 1965-03-29 | 1965-03-29 | Deposition of insulating films by cathode sputtering in an rf-supported discharge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6603355A true NL6603355A (xx) | 1966-09-30 |
Family
ID=23772705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6603355A NL6603355A (xx) | 1965-03-29 | 1966-03-15 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3287243A (xx) |
| BE (1) | BE678386A (xx) |
| DE (1) | DE1515323A1 (xx) |
| FR (1) | FR1475128A (xx) |
| GB (1) | GB1128603A (xx) |
| NL (1) | NL6603355A (xx) |
| SE (1) | SE317558B (xx) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1056987A (en) * | 1965-08-20 | 1967-02-01 | Standard Telephones Cables Ltd | A method for coating a surface of a substrate with an insulating material by sputtering |
| US3419761A (en) * | 1965-10-11 | 1968-12-31 | Ibm | Method for depositing silicon nitride insulating films and electric devices incorporating such films |
| NL130959C (xx) * | 1965-12-17 | |||
| US3451917A (en) * | 1966-01-10 | 1969-06-24 | Bendix Corp | Radio frequency sputtering apparatus |
| US3474021A (en) * | 1966-01-12 | 1969-10-21 | Ibm | Method of forming openings using sequential sputtering and chemical etching |
| US3597667A (en) * | 1966-03-01 | 1971-08-03 | Gen Electric | Silicon oxide-silicon nitride coatings for semiconductor devices |
| US3420767A (en) * | 1966-03-03 | 1969-01-07 | Control Data Corp | Cathode sputtering apparatus for producing plural coatings in a confined high frequency generated discharge |
| US3461054A (en) * | 1966-03-24 | 1969-08-12 | Bell Telephone Labor Inc | Cathodic sputtering from a cathodically biased target electrode having an rf potential superimposed on the cathodic bias |
| US3432417A (en) * | 1966-05-31 | 1969-03-11 | Ibm | Low power density sputtering on semiconductors |
| US3422321A (en) * | 1966-06-20 | 1969-01-14 | Sperry Rand Corp | Oxygenated silicon nitride semiconductor devices and silane method for making same |
| US3465209A (en) * | 1966-07-07 | 1969-09-02 | Rca Corp | Semiconductor devices and methods of manufacture thereof |
| US3479269A (en) * | 1967-01-04 | 1969-11-18 | Bell Telephone Labor Inc | Method for sputter etching using a high frequency negative pulse train |
| US3483114A (en) * | 1967-05-01 | 1969-12-09 | Victory Eng Corp | Rf sputtering apparatus including a wave reflector positioned behind the target |
| US3516920A (en) * | 1967-06-09 | 1970-06-23 | Nat Res Corp | Sputtering apparatus |
| GB1172106A (en) * | 1967-06-29 | 1969-11-26 | Edwards High Vacuum Int Ltd | Improvements in or relating to Pressure Control in Vacuum Apparatus |
| US3480482A (en) * | 1967-10-18 | 1969-11-25 | Hughes Aircraft Co | Method for making storage targets for cathode ray tubes |
| US3476971A (en) * | 1967-12-18 | 1969-11-04 | Bell Telephone Labor Inc | Apparatus for plasma processing |
| US3650737A (en) * | 1968-03-25 | 1972-03-21 | Ibm | Imaging method using photoconductive element having a protective coating |
| US3530055A (en) * | 1968-08-26 | 1970-09-22 | Ibm | Formation of layers of solids on substrates |
| US3664895A (en) * | 1969-06-13 | 1972-05-23 | Gen Electric | Method of forming a camera tube diode array target by masking and diffusion |
| US3627662A (en) * | 1970-02-24 | 1971-12-14 | Gte Laboratories Inc | Thin film transistor and method of fabrication thereof |
| US3907616A (en) * | 1972-11-15 | 1975-09-23 | Texas Instruments Inc | Method of forming doped dielectric layers utilizing reactive plasma deposition |
| JPS5252363A (en) * | 1975-10-24 | 1977-04-27 | Hitachi Ltd | Production of insb film |
| CH624755A5 (en) * | 1976-06-10 | 1981-08-14 | Univ Sydney | Solar energy collector and method of manufacturing it |
| US4062747A (en) * | 1976-06-15 | 1977-12-13 | Bell Telephone Laboratories, Incorporated | Native growth of semiconductor oxide layers |
| GB1548520A (en) * | 1976-08-27 | 1979-07-18 | Tokyo Shibaura Electric Co | Method of manufacturing a semiconductor device |
| US4246296A (en) * | 1979-02-14 | 1981-01-20 | Bell Telephone Laboratories, Incorporated | Controlling the properties of native films using selective growth chemistry |
| US4282267A (en) * | 1979-09-20 | 1981-08-04 | Western Electric Co., Inc. | Methods and apparatus for generating plasmas |
| US4289797A (en) * | 1979-10-11 | 1981-09-15 | Western Electric Co., Incorporated | Method of depositing uniform films of Six Ny or Six Oy in a plasma reactor |
| JPS5912015B2 (ja) * | 1980-03-31 | 1984-03-19 | 双葉電子工業株式会社 | 半導体装置 |
| US4335190A (en) * | 1981-01-28 | 1982-06-15 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Thermal barrier coating system having improved adhesion |
| US4804640A (en) * | 1985-08-27 | 1989-02-14 | General Electric Company | Method of forming silicon and aluminum containing dielectric film and semiconductor device including said film |
| DE3628399A1 (de) * | 1985-08-27 | 1987-03-05 | Rca Corp | Verfahren zum herstellen eines dielektrischen films auf einem halbleiterkoerper und danach hergestelltes halbleiterbauelement |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3108900A (en) * | 1959-04-13 | 1963-10-29 | Cornelius A Papp | Apparatus and process for producing coatings on metals |
| US3021271A (en) * | 1959-04-27 | 1962-02-13 | Gen Mills Inc | Growth of solid layers on substrates which are kept under ion bombardment before and during deposition |
-
1965
- 1965-03-29 US US446470A patent/US3287243A/en not_active Expired - Lifetime
- 1965-12-10 GB GB52475/65A patent/GB1128603A/en not_active Expired
-
1966
- 1966-03-15 NL NL6603355A patent/NL6603355A/xx unknown
- 1966-03-23 DE DE19661515323 patent/DE1515323A1/de active Pending
- 1966-03-24 BE BE678386D patent/BE678386A/xx unknown
- 1966-03-28 SE SE4093/66A patent/SE317558B/xx unknown
- 1966-03-29 FR FR55401A patent/FR1475128A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3287243A (en) | 1966-11-22 |
| SE317558B (xx) | 1969-11-17 |
| GB1128603A (en) | 1968-09-25 |
| BE678386A (xx) | 1966-09-01 |
| DE1515323A1 (de) | 1969-06-26 |
| FR1475128A (fr) | 1967-03-31 |