NL6602149A - - Google Patents

Info

Publication number
NL6602149A
NL6602149A NL6602149A NL6602149A NL6602149A NL 6602149 A NL6602149 A NL 6602149A NL 6602149 A NL6602149 A NL 6602149A NL 6602149 A NL6602149 A NL 6602149A NL 6602149 A NL6602149 A NL 6602149A
Authority
NL
Netherlands
Application number
NL6602149A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6602149A publication Critical patent/NL6602149A/xx

Links

Classifications

    • H10P95/00—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3408—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/052—Face to face deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/913—Diverse treatments performed in unitary chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
NL6602149A 1965-02-18 1966-02-18 NL6602149A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES95520A DE1287047B (de) 1965-02-18 1965-02-18 Verfahren und Vorrichtung zum Abscheiden einer einkristallinen Halbleiterschicht

Publications (1)

Publication Number Publication Date
NL6602149A true NL6602149A (cg-RX-API-DMAC10.html) 1966-08-19

Family

ID=7519442

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6602149A NL6602149A (cg-RX-API-DMAC10.html) 1965-02-18 1966-02-18

Country Status (7)

Country Link
US (1) US3425878A (cg-RX-API-DMAC10.html)
AT (1) AT258364B (cg-RX-API-DMAC10.html)
CH (1) CH444827A (cg-RX-API-DMAC10.html)
DE (1) DE1287047B (cg-RX-API-DMAC10.html)
GB (1) GB1132491A (cg-RX-API-DMAC10.html)
NL (1) NL6602149A (cg-RX-API-DMAC10.html)
SE (1) SE317652B (cg-RX-API-DMAC10.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636919A (en) * 1969-12-02 1972-01-25 Univ Ohio State Apparatus for growing films
DE1769605A1 (de) * 1968-06-14 1971-07-01 Siemens Ag Verfahren zum Herstellen epitaktischer Aufwachsschichten aus Halbleitermaterial fuer elektrische Bauelemente
US3839991A (en) * 1969-07-17 1974-10-08 Siemens Ag Apparatus for the production of homogeneous and plane parallel epitactic growth layers of semiconducting compounds by melt epitaxy
US3648654A (en) * 1970-03-16 1972-03-14 Bell Telephone Labor Inc Vertical liquid phase crystal growth apparatus
DE2229229A1 (de) * 1972-06-15 1974-01-10 Siemens Ag Verfahren zum herstellen von aus silizium oder siliziumcarbid bestehenden formkoerpern
US4171996A (en) * 1975-08-12 1979-10-23 Gosudarstvenny Nauchno-Issledovatelsky i Proektny Institut Redkonetallicheskoi Promyshlennosti "Giredmet" Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process
US4262630A (en) * 1977-01-04 1981-04-21 Bochkarev Ellin P Method of applying layers of source substance over recipient and device for realizing same
US4063529A (en) * 1977-04-19 1977-12-20 Ellin Petrovich Bochkarev Device for epitaxial growing of semiconductor periodic structures from gas phase
US4555303A (en) * 1984-10-02 1985-11-26 Motorola, Inc. Oxidation of material in high pressure oxygen plasma
US4601779A (en) * 1985-06-24 1986-07-22 International Business Machines Corporation Method of producing a thin silicon-on-insulator layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL265823A (cg-RX-API-DMAC10.html) * 1960-06-13
NL268294A (cg-RX-API-DMAC10.html) * 1960-10-10
NL271345A (cg-RX-API-DMAC10.html) * 1960-11-30
US3172792A (en) * 1961-07-05 1965-03-09 Epitaxial deposition in a vacuum onto semiconductor wafers through an in- teracttgn between the wafer and the support material
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
NL296876A (cg-RX-API-DMAC10.html) * 1962-08-23
US3316130A (en) * 1963-05-07 1967-04-25 Gen Electric Epitaxial growth of semiconductor devices
DE1289829B (de) * 1963-05-09 1969-02-27 Siemens Ag Verfahren zum Herstellen einer einkristallinen Halbleiterschicht durch Abscheidung aus einem Reaktionsgas
DE1297085B (de) * 1964-01-10 1969-06-12 Siemens Ag Verfahren zum Abscheiden einer einkristallinen Halbleiterschicht

Also Published As

Publication number Publication date
SE317652B (cg-RX-API-DMAC10.html) 1969-11-24
GB1132491A (en) 1968-11-06
DE1287047B (de) 1969-01-16
US3425878A (en) 1969-02-04
AT258364B (de) 1967-11-27
CH444827A (de) 1967-10-15

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