NL6600773A - - Google Patents

Info

Publication number
NL6600773A
NL6600773A NL6600773A NL6600773A NL6600773A NL 6600773 A NL6600773 A NL 6600773A NL 6600773 A NL6600773 A NL 6600773A NL 6600773 A NL6600773 A NL 6600773A NL 6600773 A NL6600773 A NL 6600773A
Authority
NL
Netherlands
Application number
NL6600773A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6600773A publication Critical patent/NL6600773A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645Combinations of only lateral BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67Complementary BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50Alloying conductive materials with semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Rectifiers (AREA)
NL6600773A 1965-01-30 1966-01-20 NL6600773A (ja�@�@)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE1258/65A SE313623B (ja�@�@) 1965-01-30 1965-01-30

Publications (1)

Publication Number Publication Date
NL6600773A true NL6600773A (ja�@�@) 1966-08-01

Family

ID=20257871

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6600773A NL6600773A (ja�@�@) 1965-01-30 1966-01-20

Country Status (6)

Country Link
US (1) US3405332A (ja�@�@)
CH (1) CH444973A (ja�@�@)
DE (1) DE1539625B1 (ja�@�@)
GB (1) GB1132824A (ja�@�@)
NL (1) NL6600773A (ja�@�@)
SE (1) SE313623B (ja�@�@)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638042A (en) * 1969-07-31 1972-01-25 Borg Warner Thyristor with added gate and fast turn-off circuit
JPS5342234B2 (ja�@�@) * 1973-02-12 1978-11-09

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1073632B (de) * 1956-06-18 1960-01-21 Radio Corporation Of America, New York, N. Y. (V. St. A.) Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung
US2879190A (en) * 1957-03-22 1959-03-24 Bell Telephone Labor Inc Fabrication of silicon devices
FR1213751A (fr) * 1958-10-27 1960-04-04 Telecommunications Sa Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion
DE1265875B (de) * 1963-01-05 1968-04-11 Licentia Gmbh Steuerbarer Halbleitergleichrichter
US3307049A (en) * 1963-12-20 1967-02-28 Siemens Ag Turnoff-controllable thyristor and method of its operation

Also Published As

Publication number Publication date
DE1539625B1 (de) 1971-11-11
SE313623B (ja�@�@) 1969-08-18
CH444973A (de) 1967-10-15
GB1132824A (en) 1968-11-06
US3405332A (en) 1968-10-08

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