NL6513861A - - Google Patents

Info

Publication number
NL6513861A
NL6513861A NL6513861A NL6513861A NL6513861A NL 6513861 A NL6513861 A NL 6513861A NL 6513861 A NL6513861 A NL 6513861A NL 6513861 A NL6513861 A NL 6513861A NL 6513861 A NL6513861 A NL 6513861A
Authority
NL
Netherlands
Application number
NL6513861A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6513861A publication Critical patent/NL6513861A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/855Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/46Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C30B29/50Cadmium sulfide
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/52Alloys
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00Alloys or metallic compositions
    • Y10S420/903Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6513861A 1964-10-27 1965-10-26 NL6513861A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR992829A FR1420509A (fr) 1964-10-27 1964-10-27 Procédé de fabrication d'alliage germanium-silicium

Publications (1)

Publication Number Publication Date
NL6513861A true NL6513861A (de) 1966-04-28

Family

ID=8841178

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6513861A NL6513861A (de) 1964-10-27 1965-10-26

Country Status (9)

Country Link
US (1) US3508915A (de)
BE (1) BE670718A (de)
CH (1) CH448542A (de)
DE (1) DE1483201B1 (de)
ES (1) ES318922A1 (de)
FR (1) FR1420509A (de)
GB (1) GB1111678A (de)
LU (1) LU49680A1 (de)
NL (1) NL6513861A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898080A (en) * 1968-05-14 1975-08-05 Atomic Energy Authority Uk Germanium-silicon Thermoelectric elements
US4442449A (en) * 1981-03-16 1984-04-10 Fairchild Camera And Instrument Corp. Binary germanium-silicon interconnect and electrode structure for integrated circuits
JPS63285923A (ja) * 1987-05-19 1988-11-22 Komatsu Denshi Kinzoku Kk シリコン−ゲルマニウム合金の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE510303A (de) * 1951-11-16
US2997410A (en) * 1954-05-03 1961-08-22 Rca Corp Single crystalline alloys
US2858275A (en) * 1954-12-23 1958-10-28 Siemens Ag Mixed-crystal semiconductor devices
BE618606A (de) * 1961-06-09

Also Published As

Publication number Publication date
LU49680A1 (de) 1965-12-22
DE1483201B1 (de) 1969-09-04
GB1111678A (en) 1968-05-01
FR1420509A (fr) 1965-12-10
US3508915A (en) 1970-04-28
BE670718A (de) 1966-01-31
ES318922A1 (es) 1967-01-01
CH448542A (fr) 1967-12-15

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