NL6505212A - - Google Patents
Info
- Publication number
- NL6505212A NL6505212A NL6505212A NL6505212A NL6505212A NL 6505212 A NL6505212 A NL 6505212A NL 6505212 A NL6505212 A NL 6505212A NL 6505212 A NL6505212 A NL 6505212A NL 6505212 A NL6505212 A NL 6505212A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/052—Face to face deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/913—Diverse treatments performed in unitary chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2337564 | 1964-04-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6505212A true NL6505212A (fr) | 1965-10-26 |
Family
ID=12108781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6505212A NL6505212A (fr) | 1964-04-25 | 1965-04-23 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3428500A (fr) |
DE (1) | DE1544187A1 (fr) |
GB (1) | GB1102031A (fr) |
NL (1) | NL6505212A (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3636919A (en) * | 1969-12-02 | 1972-01-25 | Univ Ohio State | Apparatus for growing films |
US4089735A (en) * | 1968-06-05 | 1978-05-16 | Siemens Aktiengesellschaft | Method for epitactic precipitation of crystalline material from a gaseous phase, particularly for semiconductors |
DE1769605A1 (de) * | 1968-06-14 | 1971-07-01 | Siemens Ag | Verfahren zum Herstellen epitaktischer Aufwachsschichten aus Halbleitermaterial fuer elektrische Bauelemente |
DE2060839A1 (de) * | 1970-12-10 | 1972-06-29 | Siemens Ag | Infrarotlampe mit Kolben aus Silicium |
FR2217068B1 (fr) * | 1973-02-13 | 1978-10-20 | Labo Electronique Physique | |
US4171996A (en) * | 1975-08-12 | 1979-10-23 | Gosudarstvenny Nauchno-Issledovatelsky i Proektny Institut Redkonetallicheskoi Promyshlennosti "Giredmet" | Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process |
DE2829830C2 (de) * | 1978-07-07 | 1986-06-05 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zur epitaktischen Abscheidung |
US4910163A (en) * | 1988-06-09 | 1990-03-20 | University Of Connecticut | Method for low temperature growth of silicon epitaxial layers using chemical vapor deposition system |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL268294A (fr) * | 1960-10-10 | |||
US3172792A (en) * | 1961-07-05 | 1965-03-09 | Epitaxial deposition in a vacuum onto semiconductor wafers through an in- teracttgn between the wafer and the support material | |
DE1258983B (de) * | 1961-12-05 | 1968-01-18 | Telefunken Patent | Verfahren zum Herstellen einer Halbleiteranordnung mit epitaktischer Schicht und mindestens einem pn-UEbergang |
US3243323A (en) * | 1962-06-11 | 1966-03-29 | Motorola Inc | Gas etching |
NL296876A (fr) * | 1962-08-23 | |||
NL296877A (fr) * | 1962-08-23 | |||
FR1374096A (fr) * | 1962-11-15 | 1964-10-02 | Siemens Ag | Procédé de fabrication d'un dispositif à semi-conducteur |
US3316130A (en) * | 1963-05-07 | 1967-04-25 | Gen Electric | Epitaxial growth of semiconductor devices |
DE1289829B (de) * | 1963-05-09 | 1969-02-27 | Siemens Ag | Verfahren zum Herstellen einer einkristallinen Halbleiterschicht durch Abscheidung aus einem Reaktionsgas |
USB389017I5 (fr) * | 1964-08-12 |
-
1965
- 1965-04-21 US US449761A patent/US3428500A/en not_active Expired - Lifetime
- 1965-04-21 DE DE19651544187 patent/DE1544187A1/de active Pending
- 1965-04-23 NL NL6505212A patent/NL6505212A/xx unknown
- 1965-04-26 GB GB17572/65A patent/GB1102031A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1544187A1 (de) | 1971-03-04 |
GB1102031A (en) | 1968-02-07 |
US3428500A (en) | 1969-02-18 |