USB389017I5 - - Google Patents

Info

Publication number
USB389017I5
USB389017I5 US389017DD USB389017I5 US B389017 I5 USB389017 I5 US B389017I5 US 389017D D US389017D D US 389017DD US B389017 I5 USB389017 I5 US B389017I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of USB389017I5 publication Critical patent/USB389017I5/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/054Flat sheets-substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/115Orientation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • ing And Chemical Polishing (AREA)
US389017D 1964-08-12 Pending USB389017I5 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US389017A US3366520A (en) 1964-08-12 1964-08-12 Vapor polishing of a semiconductor wafer

Publications (1)

Publication Number Publication Date
USB389017I5 true USB389017I5 (fr)

Family

ID=23536484

Family Applications (2)

Application Number Title Priority Date Filing Date
US389017D Pending USB389017I5 (fr) 1964-08-12
US389017A Expired - Lifetime US3366520A (en) 1964-08-12 1964-08-12 Vapor polishing of a semiconductor wafer

Family Applications After (1)

Application Number Title Priority Date Filing Date
US389017A Expired - Lifetime US3366520A (en) 1964-08-12 1964-08-12 Vapor polishing of a semiconductor wafer

Country Status (5)

Country Link
US (2) US3366520A (fr)
JP (1) JPS4929790B1 (fr)
DE (1) DE1521795B2 (fr)
GB (1) GB1081888A (fr)
NL (1) NL6509555A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3428500A (en) * 1964-04-25 1969-02-18 Fujitsu Ltd Process of epitaxial deposition on one side of a substrate with simultaneous vapor etching of the opposite side
US3522118A (en) * 1965-08-17 1970-07-28 Motorola Inc Gas phase etching
US3546036A (en) * 1966-06-13 1970-12-08 North American Rockwell Process for etch-polishing sapphire and other oxides
US3639186A (en) * 1969-02-24 1972-02-01 Ibm Process for the production of finely etched patterns
US4671847A (en) * 1985-11-18 1987-06-09 The United States Of America As Represented By The Secretary Of The Navy Thermally-activated vapor etchant for InP
US4708766A (en) * 1986-11-07 1987-11-24 Texas Instruments Incorporated Hydrogen iodide etch of tin oxide
DE60218541T2 (de) * 2002-05-01 2007-11-22 Danfoss A/S Verfahren zur modifizierung einer metalloberfläche

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030189A (en) * 1958-05-19 1962-04-17 Siemens Ag Methods of producing substances of highest purity, particularly electric semiconductors
US3218204A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide as a carrier gas in forming ii-vi compound from a crude ii-vicompound

Also Published As

Publication number Publication date
GB1081888A (en) 1967-09-06
JPS4929790B1 (fr) 1974-08-07
DE1521795B2 (de) 1972-01-27
NL6509555A (fr) 1966-02-14
DE1521795A1 (de) 1970-02-12
US3366520A (en) 1968-01-30

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